A92B1 [JCST]
Transistor;
| 型号： | A92B1 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体管 |
| 文件： | 总2页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR (PNP)
TO-92
FEATURES
1.EMITTER
2.BASE
High voltage
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3.COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-300
-300
-5
Units
V
Collector-Base Voltage
1 2 3
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-500
625
mA
mW
PC
Tj
150
℃
Tstg
Storage Temperature
-55-150
200
℃
RӨJA
RӨJC
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
℃/mW
℃/mW
83.3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
-300
-300
-5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-100uA, IE=0
V
V
IC=-1mA, IB=0
IE=-100μA, IC=0
V
VCB= -200 V IE=0
VEB= -5 V, IC=0
-0.25
-0.1
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE= -10 V, IC=- 1 mA
VCE= -10V, IC = -10 mA
VCE= -10 V, IC= -80 mA
IC= -20 mA, IB= -2 mA
IC= -20 mA, IB= -2 mA
60
80
60
DC current gain
hFE(2)
250
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
-0.2
-0.9
V
V
VCE= -20 V, IC= -10 mA
f = 30MHz
50
MHz
CLASSIFICATION OF hFE(2)
Rank
A
B1
B2
150-200
C
Range
80-100
100-150
200-250
相关型号：
A92B1-BP
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
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A92B2-BP
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A92C-BP
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