A733LT1-SOT-23 [JCST]
TRANSISTOR（ PNP ）; 晶体管（ PNP ）
| 型号： | A733LT1-SOT-23 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ PNP ） |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
A733LT1
TRANSISTOR（ PNP ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM : 0.2
W（Tamb=25℃）
2.4
1.3
Collector current
ICM : -0.15
A
Collector-base voltage
V(BR)CBO : -60
V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-60
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= -5 μA ， IE=0
IC= -1 mA , IB=0
IE= -50 μA， IC=0
VCB= -60 V , IE=0
VEB= -5 V , IC=0
VCE= -6 V, IC= -1mA
IC= -100mA, IB=- 10mA
V
V
-0.1
-0.1
475
-0.3
μA
μA
Emitter cut-off current
IEBO
DC current gain
HFE（1）
120
50
Collector-emitter saturation voltage
VCE(sat)
-0.18
V
VCE= -6 V, IC=-10mA
f = 30MHz
Transition frequency
MHz
f
T
CLASSIFICATION OF HFE(1)
Rank
L
H
Range
120-200
200-475
MARKING
CS
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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