8050SS [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )型号: | 8050SS |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( NPN ) |
文件: | 总3页 (文件大小:385K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS TRANSISTOR( NPN )
TO— 92
FEATURES
Power dissipation
1.EMITTER
2. COLLECTOR
3. BASE
PCM
Collector current
ICM: 1.5
:
1
W
(Tamb=25℃)
A
Collector-base voltage
V(BR)CBO : 40
1 2 3
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic= 100 μA , IE=0
IC= 0.1 mA , IB=0
IE= 100 μA, IC=0
conditions
MIN
40
25
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
VCB= 40 V ,
VCE= 20 V ,
IE=0
IB=0
0.1
0.1
0.1
300
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
VEB= 5
V , IC=0
hFE(1)
VCE= 1 V , IC= 100 mA
VCE= 1 V , IC=800 mA
IC= 800 mA, IB= 80 mA
IC= 800mA, IB= 80 mA
85
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.2
V
V
VCE= 10 V, I = 50mA
C
Transition frequency
100
MHz
f
T
f =30 MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
相关型号:
8050SS-C-BP
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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