3CG751O [JCST]
Transistor;
| 型号： | 3CG751O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
3CG751 TRANSISTOR (PNP)
FEATURE
y
y
High power amplifier
Low VCE(sat)
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
-30
1 2 3
-30
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1.5
A
PC
0.9
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYPE
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= -100µA, IE=0
-30
-30
-5
V
V
IC= -1 mA , IB=0
IE= -100µA , IC=0
V
VCB= -30 V, IE=0
-0.1
-0.1
400
-2
µA
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-2 V, IC= -500mA
IC= -1.5 A, IB= -30mA
VCE= -5V, IC= -100mA
VCB=-10V,IE=0,f=1MHz
100
50
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
f T
V
MHz
pF
Collector output capacitance
Cob
80
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-240
150-400
Typical Characteristics
3CG751
相关型号：
©2020 ICPDF网 联系我们和版权申明