2SD789E(TO-92L) [JCST]
Transistor;
| 型号： | 2SD789E(TO-92L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
2SD789 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
Low Frequency Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
100
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
6
V
Collector Current
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
750
mW
℃/W
℃
RθJA
Tj
167
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
100
50
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10µA,IE=0
IC=1mA,IB=0
V
IE=10µA,IC=0
6
V
VCB=80V,IE=0
1
μA
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
0.2
800
0.3
DC current gain
hFE
VCE=2V, IC=100mA
IC=1A,IB=100mA
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=10mA
100
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
20
pF
fT
100
MHz
CLASSIFICATION OF hFE
E
RANK
B
C
D
400-800
RANGE
100-200
160-320
250-500
A,Dec,2010
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