2SC5345O(SOT-23) [JCST]
Transistor;
| 型号： | 2SC5345O(SOT-23) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：585K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC5345 TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
RF amplifier
z
High current transition frequency fT=550MHz(Typ.),
[VCE=6V, IE=-1mA]
z
Low output capacitance :
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
Low base time constant and high gain
Excellent noise response
z
z
Marking: 5345
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
V
20
V
4
20
mA
mW
℃
PC
Collector Power dissipation
Junction Temperature
Storage Temperature
300
150
-55-150
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
IC=10μA, IE=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
20
4
V
V
IC=5mA, IB=0
IE=10μA, IC=0
V
VCB=30V, IE=0
0.5
0.5
240
0.3
μA
μA
VEB=4V, IC=0
Emitter cut-off current
IEBO
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCB=6V, IE=0, f=1MHz
DC current gain
hFE
40
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
550
1.4
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
R
O
Y
40-80
70-140
120-240
A,May,2011
Range
相关型号：
2SC5346
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
PANASONIC
©2020 ICPDF网 联系我们和版权申明