2SC4003D(TO-252) [JCST]
Transistor;
| 型号： | 2SC4003D(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SC4003 TRANSISTOR (NPN)
TO-252
FEATURES
High hFE
hFE=60 to 200
1. BASE
low VCE(sat) VCE(sat)=0.6V
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
400
400
5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.2
A
PC
1
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
400
400
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10µA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
V
V
ICBO
IEBO
VCB=300V,IE=0
0.1
0.1
200
0.6
1
µA
µA
Emitter cut-off current
VEB=4V,IC=0
DC current gain
hFE
VCE=10V,IC=50mA
IC=50mA,IB=5mA
IC=50mA,IB=5mA
VCE=30V,IC=10mA
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
70
MHz
CLASSIFICATION OF hFE
Rank
D
E
60-120
100-200
Range
A,Jun,2011
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