2SC2411R [JCST]
Transistor;
| 型号： | 2SC2411R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：1283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC2411 TRANSISTOR(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
z
z
High ICMax.ICMax. = 0.5mA
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1036
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
40
V
32
V
5
500
200
150
-55-150
mA
mW
℃
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Min
40
32
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100μA,IE=0
V
IC=1mA,IB=0
V
IE=100μA,IC=0
μA
μA
VCB=20V,IE=0
1
1
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=3V,IC=100mA
IC=500mA,IB=50mA
VCE=5V,IC=20mA,f=100MHz
VCB=10V,IE=0,f=1MHz
82
390
0.4
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
V
MHz
pF
fT
250
6.0
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
82-180
CP
120-270
CQ
180-390
CR
Range
Marking
A,May,2011
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