2SC2383O(TO-92L) [JCST]
Transistor;
| 型号： | 2SC2383O(TO-92L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SC2383
TRANSISTOR (NPN)
FEATURE
1. EMITTER
2. COLLECTOR
3. BASE
y
y
y
High Voltage: VCEO=160V
Large Continuous Collector Current Capability
Complementary to 2SA1013
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Unit
V
160
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
160
V
6
1
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
A
PC
0.75
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA , IE=0
IC= 10mA, IB=0
Min
160
160
6
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IE= 10μA, IC=0
V
VCB=150V, IE=0
1
10
1
μA
μA
μA
Collector cut-off current
ICER
VCB=150V,REB= 10MΩ
VEB=6V, IC=0
Emitter cut-off current
IEBO
hFE1
VCE=5V, IC=200mA
VCE=5V, IC=10mA
IC=500m A, IB=50mA
IC=5mA, VCE= 5V
VCE=5V, IC=200mA
60
40
320
DC current gain
hFE2
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
1
V
V
0.75
Transition frequency
f T
20
MHz
CLASSIFICATION OF hFE1
Rank
R
O
Y
Range
60-120
100-200
160-320
A,Jun,2011
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