2SC1675R [JCST]
Transistor;
| 型号： | 2SC1675R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC1675 TRANSISTOR (NPN)
1.EMITTER
2.BASE
FEATURES
z
z
Low Collector Current
General Purpose Switching and Amplification
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
50
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current
50
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
625
RθJA
Tj
200
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
50
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10µA,IE=0
IC=5mA,IB=0
V
IE=10µA,IC=0
V
VCB=50V,IE=0
100
100
240
0.3
nA
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=6V, IC=1mA
IC=10mA,IB=1mA
VCE=6V, IC=1mA
VCB=6V,IE=0, f=1MHz
VCE=6V,IC=1mA
40
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
0.75
2.5
pF
Collector output capacitance
Transition frequency
Cob
fT
150
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
120-240
A,Dec,2010
相关型号：
©2020 ICPDF网 联系我们和版权申明