2SB1658(TO-252-2L) [JCST]
Transistor;
| 型号： | 2SB1658(TO-252-2L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SB1658 TRANSISTOR (PNP)
TO-252-2L
1.BASE
FEATURES
z
z
Low VCEsat VCEsat=-0.15V Max(IC/IB=1.0A/50mA)
High DC Current gain hEF=150 to 600(VCE= -2V, IC= -1A)
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-30
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-5
A
PC
1
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=-0.1mA,IE=0
IC=-1mA,IB=0
Min
-30
-30
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IE=-0.1mA,IC=0
VCB=-30V,IE=0
VEB=-6V,IC=0
V
-0.1
-0.1
600
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE=-2V,IC=-1A
VCE=-2V,IC=-4A
150
50
DC current gain
hFE(2)
IC=-1A,IB=-50mA
IC=-2A,IB=-100mA
IC=-4A,IB=-200mA
-0.15
-0.25
-0.5
Collector-emitter saturation voltage
VCE(sat)
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-1A,IB=-100mA
-1.5
V
VCE=-10V,IC=-50mA
VCB=-10V,IE=0,f=1MHz
95
MHz
pF
Collector output capacitance
Cob
100
A,Sep,2011
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