2SB1202U(TO-252) [JCST]
Transistor;
| 型号： | 2SB1202U(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SB1202 TRANSISTOR (PNP)
TO-252
FEATURES
z
z
z
z
Adoption of FBET,MBIT Processes
1.BASE
Large Current Capacity and Wide ASO
Low Collector-to-Emitter Saturation Voltage
Fast Switching Speed
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-50
V
-6
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-3
A
PC
1
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-60
-50
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic=-100µA, IE=0
Ic=-1mA, IB=0
V
V
IE=-100µA, IC=0
µA
µA
VCB=-40V, IE=0
-1
-1
Emitter cut-off current
IEBO
VEB=-4V, IC=0
hFE(1)
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
100
35
560
DC current gain
hFE(2)
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
V
IC=-2A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
-0.7
MHz
pF
fT
150
39
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
R
S
T
U
Rank
100-200
140-280
200-400
280-560
Range
A,Jun,2011
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