2SB1068L [JCST]
Transistor;
| 型号： | 2SB1068L |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SB1068 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
z
Low Collector Saturation Voltage
High DC Current Gain
High Collector Power Dissipation
Complementary To The 2SD1513 NPN Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-20
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-16
V
-6
V
Collector Current
-2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
625
mW
℃/W
℃
RθJA
Tj
200
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-20
-16
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=- 0.1mA,IE=0
IC=-1mA,IB=0
V
IE=-0.1mA,IC=0
V
VCB=-16V,IE=0
-0.1
-0.1
650
μA
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
hFE(1)
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-1.5A
IC=-1A,IB=-10mA
IC=-1.5A,IB=-20mA
IC=-1.5A,IB=-75mA
IC=-1.5A,IB=-75mA
VCE=-6V, IC=-5mA
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-50mA
135
100
DC current gain
hFE(2)
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE (sat)
VBE
-0.4
-0.5
-0.5
-1.2
-0.65
V
V
Collector-emitter saturation voltage
V
Base-emitter saturation voltage
Base-emitter voltage
V
-0.55
100
V
60
pF
MHz
Collector output capacitance
Transition frequency
Cob
fT
CLASSIFICATION OF hFE(1)
RANK
L
K
U
RANGE
135-270
200-400
300-650
A,Dec,2010
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