2SA1283C [JCST]
Transistor;
| 型号： | 2SA1283C |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO – 92MOD
2SA1283 TRANSISTOR (PNP)
1. EMITTER
FEATURES
2. COLLECTOR
3. BASE
z
z
High Collector-Emitter Voltage
Low Collector-Emitter Saturation Voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-60
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-6
V
Collector Current
-1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
900
mW
℃/W
℃
RθJA
Tj
139
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-60
-60
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -10µA,IE=0
IC=-2mA,IB=0
V
IE=-10µA,IC=0
V
VCB=-50V,IE=0
-0.2
-0.2
300
-0.3
25
μA
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-4V, IC=-100mA
IC=-500mA,IB=-25mA
VCB=-10V,IE=0, f=1MHz
VCE=-2V,IC=-10mA
55
50
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
pF
fT
MHz
CLASSIFICATION OF hFE
RANK
C
D
E
RANGE
55-110
90-180
150-300
A,Dec,2010
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