2SA1162(SOT-23) [JCST]
Transistor;
| 型号： | 2SA1162(SOT-23) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：1261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SA1162 TRANSISTOR (PNP)
3
FEATURES
. Low noise : NF= 1dB(Typ.),10dB (Max.)
1
2
. Complementary to 2SC2712.
. Small Package.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: SO , SY , SG
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
-50
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Current -Continuous
-50
V
-5
V
-150
150
mA
mW
℃
PD
Collector Power Dissipation
Junction Temperature
Storage Temperature
TJ
125
Tstg
-55-125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
V(BR)CBO IC=-100u A,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100 u A,IC=0
Min
-50
-50
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
IEBO
hFE
VCB=-50V,IE=0
-0.1
-0.1
400
-0.3
u A
u A
Emitter cut-off current
VEB=-5V,IC=0
DC current gain
VCE=-6V,IC=-2mA
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
VCB=-10V,IE=0,f=1MHz
70
80
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
MHz
pF
Collector output capacitance
Cob
7
VCE=-6V,Ic=0.1mA,
Noise figure
NF
10
dB
f=1KHZ,Rg=10KΩ
CLASSIFICATION OF hFE
Rank
O
Y
GR(G)
200-400
Range
70-140
120-240
A,May,2011
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