W-IXSD40N60 [IXYS]
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel;
| 型号： | W-IXSD40N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel 电动机控制 栅 晶体管 |
| 文件： | 总1页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
W-IXTD01N100
Power Field-Effect Transistor, 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD01N80
Power Field-Effect Transistor, 800V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD10N90-L
Power Field-Effect Transistor, 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD10P50
Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD11N80
Power Field-Effect Transistor, 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD11P50
Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
W-IXTD12N100
Power Field-Effect Transistor, 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS
©2020 ICPDF网 联系我们和版权申明