W-IXFD30N50 [IXYS]

Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
W-IXFD30N50
元器件型号: W-IXFD30N50
生产厂家: IXYS CORPORATION    IXYS CORPORATION
描述和应用:

Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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PDF文件: 总1页 (文件大小:128K)
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型号参数:W-IXFD30N50参数

W-IXFD40N30

Power Field-Effect Transistor, 300V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD50N20

Power Field-Effect Transistor, 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD6N100

Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD6N90

Power Field-Effect Transistor, 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD75N10

Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD75N10

Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD76N07-12

Power Field-Effect Transistor, 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD7N80

Power Field-Effect Transistor, 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXFD8N80

Power Field-Effect Transistor, 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

W-IXGD10N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

W-IXGD10N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

W-IXGD10N60

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

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0 IXYS

W-IXGD12N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

W-IXGD12N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS

W-IXGD12N100A

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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0 IXYS