VUO60-16NO3 [IXYS]
Theww Phase Rectifier Bridge; Theww相整流桥
| 型号： | VUO60-16NO3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Theww Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO 60
IdAV = 72 A
VRRM = 1200-1800 V
Three Phase
Rectifier Bridge
+
+
–
+
~
VRSM
V
VRRM
V
Type
~
~
~
~
~
1300
1500
1700
1900
1200
1400
1600
1800
VUO 60-12NO3
VUO 60-14NO3
VUO 60-16NO3
VUO 60-18NO3*
–
–
* delivery time on request
Features
①
Symbol
Test Conditions
Maximum Ratings
Package with DCB ceramicbase plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
¼" fast-on terminals
IdAV
IdAVM
①
①
TC = 85°C, module
module
72
75
A
A
①
①
①
①
①
①
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
650
A
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
540
600
A
A
UL registered E 72873
VR = 0
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1770
A2s
A2s
A2s
A2s
Applications
①
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Rectifier for DC motors field current
①
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1460
1510
①
①
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
Advantages
①
Easy to mount with two screws
Space and weight savings
Improved temperature and power
①
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
①
cycling
Md
Mounting torque
(M5)
2-2.5
Nm
(10-32 UNF)
18-22 lb.in.
50
Dimensions in mm (1 mm = 0.0394")
Weight
typ.
g
Symbol
IR
Test Conditions
Characteristic Values
VR = VRRM
VR = VRRM
;
;
TVJ = 25°C
TVJ = TVJM
0.3
5
mA
mA
VF
IF = 150 A;
TVJ = 25°C
1.9
V
VT0
rT
For power-loss calculations only
0.8
6.5
V
mW
RthJC
per diode, DC current
per module
per diode, DC current
per module
1.2
0.2
1.6
K/W
K/W
K/W
K/W
RthJH
0.27
dS
dA
a
Creep distance on surface
Strike distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
① for resistive load at bridge output
IXYS reserves the right to change limits, test conditions and dimensions.
Use output terminals in parallel
connection!
© 2000 IXYS All rights reserved
1 - 2
VUO 60
80
600
A
104
A2s
50Hz, 80% VRRM
VR = 0 V
A
70
500
IFSM
I2t
60
50
40
30
20
10
0
TVJ = 45°C
IF
400
300
200
100
0
TVJ = 45°C
103
TVJ = 125°C
TVJ=125°C
TVJ= 25°C
TVJ = 125°C
102
V
0.0
0.5
1.0
VF
1.5
0.001
0.01
0.1
t
s
1
1
2
3
4
5 6 7 10
ms
t
Fig. 4 Forward current versus voltage
drop per diode
Fig. 5 Surge overload current
Fig. 6 I2t versus time per diode
250
W
80
A
70
RthHA
:
200
Ptot
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
5.0 K/W
60
Id(AV)M
50
40
30
20
10
0
150
100
50
0
0
10 20 30 40 50 60 70
Id(AV)M
0
20 40 60 80 100 120 °C
0
20 40 60 80 100 120 °C
A
Tamb
TC
Fig. 7 Power dissipation versus direct output current and ambient temperature
Fig. 8 Max. forward current versus
case temperature
1.8
K/W
1.6
1.4
ZthJH
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.883
0.098
0.202
0.417
0.102
0.103
0.492
0.62
0.001
0.01
0.1
1
10
s
100
t
Fig. 9 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2 - 2
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IXYS
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