R3968FC28M_技术文档

Date:- 17 Oct 2007

Data Sheet Issue:- 3

WESTCODE

An IXYS Company

Provisional Data

Distributed Gate Thyristor

Types R3968F#20x to R3968F#28x

Development Type Number: RX075F#20x-28x

Absolute Maximum Ratings

MAXIMUM

LIMITS

2000-2800

2100-2900

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

V

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

4001

A

2691

1582

A

7988

A

6712

A

Peak non-repetitive surge t_p=10ms, V_rm=60%V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=60%V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm≤10V, (note 5)

66.0

kA

A²s

I_TSM2

72.5

I²t

21.78×10⁶

26.28×10⁶

1000

I²t

Non-repetitive

Repetitive (50Hz, 60s)

Continuous (50Hz)

500

(di/dt)_crCritical rate of rise of on-state current (note 6)

A/µs

250

V_RGM

P_G(AV)

P_GM

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Operating temperature range

Storage temperature range

5

V

4

W

°C

50

T_{j op}

-40 to +125

-40 to +150

T_stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 1 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

-

2.20 I_TM=6000A

V

-

1.453

0.125

-

Slope resistance

-

mΩ

V/µs

mA

V

(dv/dt)_crCritical rate of rise of off-state voltage

200

-

V_D=80% V_DRM, Linear ramp, Gate o/c

I_DRM

I_RRM

V_GT

I_GT

V_GD

I_H

Peak off-state current

Peak reverse current

Gate trigger voltage

-

200 Rated V_DRM

200 Rated V_RRM

-

3.0

T_j=25°C

600

V_D=10V, I_T=3A

Gate trigger current

-

mA

V

Gate non-trigger voltage

Holding current

-

0.25 Rated V_DRM

1000 T_j=25°C

-

mA

t_gd

Gate controlled turn-on delay time

Turn-on time

0.8

2.0

2600

1700

360

9.5

2.0

V_D=67% V_DRM, I_TM=4000A, di/dt=60A/µs,

µs

I

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

3.0

Q_rr

Q_ra

I_rm

Recovered charge

3200

µC

A

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time

-

I

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V

t_rr

µs

I_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=20V/µs

50

60

-

70

t_q

Range of maximum turn-off time (note 2)

µs

I

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

100

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=200V/µs

-

0.0065 Double side cooled

0.0130 Single side cooled

99

K/W

kN

R_thJK

F

Thermal resistance, junction to heatsink

Mounting force

Weight

81

-

2.8

2.0

-

Outline options FC & FT

Outline option FD

W_t

kg

-

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required maximum t_q(specified with dV_dr/dt=200V/µs) is represented by the 10^thcharacter in the device part number. See

ordering information for details of t_qcodes.

3) For other clamp forces, please consult factory

Notes on rupture rated packages.

This product is available with a non-rupture rated package.

For additional details on these products, please consult factory.

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 2 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V

_DRMV_DSMV_RRM

V_RSM

V_D

Voltage Grade

V

DC V

1250

1350

1450

1550

1650

20

22

24

26

28

2000

2100

2300

2500

2700

2900

2200

2400

2600

2800

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 3 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

1

f ^max=

tpulse +tq +tv

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_thJKbe the steady-state d.c. thermal resistance (junction to sink)

and T_Kbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P⋅ f and T_{K (max.)}=125 −

(

W_AV⋅ R_thJK

)

14.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1

Fig. 1

150µs

(ii) Q_rris based on a 150µs integration time i.e.

Q_rr= i_rr.dt

∫

0

(iii)

t₁

K Factor =

t₂

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 4 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from the following:

T_{K (new)}= T_{K (original )}− E ⋅

(

k + f ⋅ R_thJK

)

Where k=0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_thJK= d.c. thermal resistance (°C/W).

The total dissipation is now given by:

W_(TOT)= W_(original)+ E ⋅ f

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_K

= T_K

−

original

( )

(

E ⋅ R_th⋅ f

)

(

new

)

Where T_{K (new)}is the required maximum heat sink temperature and

T_{K (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

= Commutating source voltage

V_r

R²= 4⋅

Where: C_S= Snubber capacitance

C_S⋅ ^di

R

= Snubber resistance

dt

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 5 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

16.0 Computer Modelling Parameters

16.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs V_T, on page 7 is represented in two ways;

(i)

the well established V_T0and r_Ttangent used for rating purposes and

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

(ii)

V_T= A+ B⋅ln

(

I_T+ C ⋅ I_T+ D ⋅ I_T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for V_Tagree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

125°C Coefficients

A

B

C

D

1.3629084

0.1684087

A

B

C

D

1.726243

-0.04672899

1.452344×10^-4

1.145080×10^-4

1.910292×10^-4

-0.02403392

16.2 D.C. Thermal Impedance Calculation

p=n

−t

τ _p









r = r ⋅ 1− e

∑

t

p





p=1





Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p= Time Constant of r_thterm.

D.C. Single Side Cooled

Term

r_p

τ_p

1

2

3

4

3.424745×10^-3

1.125391

1.745273×10^-3

0.1878348

8.532017×10^-4

0.02788979

3.457329×10^-4

8.430889×10^-3

D.C. Double Side Cooled

2

Term

r_p

τ_p

1

3

4

8.375269×10^-3

8.929845

2.518437×10^-3

0.4711304

1.193758×10^-3

0.08221244

7.45432×10^-4

0.01221961

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 6 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Curves

Figure 1 – On-state characteristics of Limit device

Figure 2 – Transient thermal impedance

10000

0.1

R3968F#20x-28x

AD Issue 3

T_j= 125°C

SSC 0.013K/W

T_j= 25°C

0.01

DSC 0.0065K/W

1000

0.001

0.0001

100

0.00001

0

0.5

1

1.5

2

2.5

3

0.0001

0.001

0.01

0.1

1

10

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 – Gate characteristics – Trigger limits

Figure 4 – Gate characteristics – Power curves

20

8

R3968F#20x-28x

AD Issue 3

T_j=25°C

7

T_j=25°C

18

16

14

12

10

8

Max V_Gdc

6

5

Max V_Gdc

I_GT, V_GT

4

3

P_GMax 50W dc

6

2

4

Min V_Gdc

P_G4W dc

Min V_Gdc

1

2

I_GD, V_GD

0

2

4

6

8

10

0

0.25

0.5

0.75

1

1.25

1.5

Gate Trigger Current - I_GT(A)

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 7 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Figure 5 – Total recovered charge, Q_rr

Figure 6 – Recovered charge, Q_ra(50% chord)

10000

R3968F#20x-28x

4000A

2000A

1000A

R3968F#20x-28x

AD Issue 3

T_j= 125°C

4000A

2000A

500A

1000A

500A

1000

100

1

10

100

1000

1

10

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 – Peak reverse recovery current, I_rm

Figure 8 – Maximum recovery time, t_rr(50% chord)

100

10000

R3968F#20x-28x

AD Issue 3

R3968F#20x-28x

AD Issue 3

T_j= 125°C

4000A

2000A

1000A

500A

1000

100

10

4000A

2000A

1000A

500A

1

10

100

1000

1

10

100

1000

Commutation rate - di/dt (A/µs)

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 8 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Figure 9 – Reverse recovery energy per pulse

Figure 10 – Sine wave energy per pulse

1.00E+03

10000

R3968F#20x-28x

AD Issue 3

T_j=125°C

T_j= 125°C

V_r= 400V

Measured

without

snubber

1.00E+02

4000A

3000A

2000A

1000A

8000A

1.00E+01

6000A

4000A

1000

1.00E+00

2000A

1000A

1.00E-01

500A

1.00E-02

100

1.00E-05

1.00E-04

1.00E-03

1.00E-02

10

100

1000

Pulse width (s)

Commutation rate - di/dt (A/µs)

Figure 11 – Sine wave frequency ratings

Figure 12 – Sine wave frequency ratings

1.00E+05

R3968F#20x-28x

AD Issue 3

T_K=85°C

AD Issue 3

1000A

T_K=55°C

1000A

2000A

100% Duty Cycle

2000A

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

1.00E+03

1.00E+02

1.00E+01

4000A

6000A

8000A

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse Width (s)

Pulse width (s)

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 9 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Figure 13 – Square wave frequency ratings

Figure 14 – Square wave frequency ratings

1.00E+05

R3968F#20x-28x

AD Issue 3

di/dt=500A/µs

di/dt=100A/µs

T_K=55°C

1kA

2000A

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

2kA

100% Duty Cycle

4000A

4kA

6kA

6000A

8000A

8kA

1.00E+03

1.00E+02

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 – Square wave frequency ratings

Figure 16 – Square wave frequency ratings

1.00E+05

R3968F#20x-28x

AD Issue 3

di/dt=500A/µs

T_K=85°C

R3968F#20x-28x

500A

AD Issue 3

di/dt=100A/µs

T_K=85°C

1000A

2000A

100% Duty Cycle

1kA

2kA

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

1.00E+03

1.00E+02

1.00E+01

4000A

4kA

6kA

6000A

8000A

8kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 10 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Figure 17 – Square wave energy per pulse

Figure 18 – Square wave energy per pulse

1.00E+03

R3968F#20x-28x

AD Issue 3

di/dt=500A/µs

T_j=125°C

di/dt=100A/µs

T_j=125°C

1.00E+02

8000A

6000A

4000A

1.00E+01

8000A

1.00E+01

6000A

4000A

2000A

1000A

500A

1.00E+00

1.00E-01

1.00E-02

2000A

1000A

500A

1.00E-01

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 – Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

1000000

100000

10000

1.00E+09

1.00E+08

1.00E+07

R3968F#20x-28x

AD Issue 3

T_j(initial) = 125°C

I²t: V_RRM≤10V

I²t: 60% V_RRM

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 11 of 12

October, 2007

WESTCODE An IXYS Company

Distributed Gate Types R3968F#20x to R3968F#28x

Outline Drawing & Ordering Information

101A347

Outline options FC and FT

Outline option FD

ORDERING INFORMATION

(Please quote 10 digit code as below)

ꢀꢀ

R3968

F#

x

Outline Code

FC=36.5mm height,

Voltage code

V_DRM/100

20-28

Turn-off time code

K=60µs, L=65µs,

M=70µs, N=100µs

Fixed

Type Code

FT=36.5mm height, rupture rated

FD=26mm height

Typical order code: R3968FT26L – 2600V V_DRM, V_RRM, t_q=65µs, 36.5mm clamp height and rupture rated capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

WESTCODE

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

An IXYS Company

E-mail: WSL.sales@westcode.com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

www.westcode.com

www.ixys.com

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except

with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3

Page 12 of 12

October, 2007


型号：	R3968FC28M
厂家：	IXYS CORPORATION
描述：	Silicon Controlled Rectifier, 7988A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element 栅栅极
文件：	总12页 (文件大小：644K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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