MPS-0030H16-02 [IXYS]
Wide Band Medium Power Amplifier, 10MHz Min, 3000MHz Max, LEADLESS, PACKAGE 02, 10 PIN;
| 型号： | MPS-0030H16-02 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 10MHz Min, 3000MHz Max, LEADLESS, PACKAGE 02, 10 PIN 射频 微波 |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS-0030H16-02
10 - 3000 MHz Linear Amplifier
Preliminary Data Sheet
June 2006
Features:
•
•
•
•
•
•
10 - 3000 MHz Freq Range
16 dB Gain
2.0:1.0 VSWR
+27.0 dBm P1dB
Single Positive Bias
Leadless Surface Mount Package (02)
Description:
The MPS-0030H16-02 is an internally matched wide band modular amplifier. It is designed for both military and
commercial applications such as LO driver, buffer amplifier, and as a medium power gain block. It is ideal for satellite
up and down converter and telemetry applications, and for digital radio communications for military electronic systems
and wireless communications. It requires a single 7 volt positive bias and only draws 240 MA DC current. The P1 dB
is typically 27 dBm and the gain is 16 dB typically. It is available in a low cost Leadless surface mount package.
•
@ 25°C, Vdd = 7.0 to 8.0 V, Zo = 50 ohms
Electrical Specifications:
SYMBOL
Freq.
SSG
PARAMETERS
Min
10
Typical
Max
3000
Unit
MHz
dB
dBm
dBm
Frequency Range
Small Signal Gain
14.5
25.5
16.0
27
P1 dB
IP3
VSWR
GOF
GOT
Idd
Pout at 1 dB Comp Point
Third-Order Intercept
VSWR (Input/Output)
Gain Var. over Frequency
Gain Var. over Temp
DC Current
33.5
2.0:1
± 0.5
-0.015
240
± 0.8
270
dB
dB/°C
mA
Rth
Thermal Resistance
55
°C/W
P1dB @ 25C
Absolute Maximum Ratings
30
Maximum Bias Voltage
Maximum RF Input Power
Maximum Channel Temperature
8.0 V
500 mW
+175 °C
28
26
24
22
20
Maximum Storage Temperature - 65 °C to + 150 °C
0
500
1000
1500
2000
2500
3000
Freq. (MHz)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MPS-0030H16-02
10 - 3000 MHz Linear Amplifier
Preliminary Data Sheet
June 2006
Gain @ 25C
Return Losses @ 25C
0
-5
S11
S22
18
17
16
15
14
13
12
11
-10
-15
-20
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Freq. (MHz)
Freq. (MHz)
Outline Diagram (Package 02)
GAP. .003 TYP.
.15 MAX.
.050 TYP. 2 PLCS.
.430
.250
INPUT SIDE DOT
.050 TYP. 8 PLCS.
.270
.024 TYP. 10 PLCS.
OUTPUT PAD
INPUT PAD
.040 TYP. 2 PLCS.
GROUND PAD
Application Circuit
(300-3000 MHz)
RF
IN
C1
C2
L1
CR1
100 pF
Chip Capacitor
Capacitor
Printed or Wound Coil
Zener Diode
22 uF
160 nH
8.0 V
50 ohm Microstrip Line
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
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