MHA-495433 [IXYS]
Narrow Band Medium Power Amplifier, 4900MHz Min, 5400MHz Max,;
| 型号： | MHA-495433 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Narrow Band Medium Power Amplifier, 4900MHz Min, 5400MHz Max, 射频 微波 |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MHA-495433
4.9- 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
With Active Bias
Advanced Data Sheet
June 2008 V0
CHIP LAYOUT
Features:
•
•
•
•
•
•
•
Frequency Range: 4.9 to 5.4 GHz
OIP3: +45 dBm at 5.1 GHz
P1dB: +33.5 dBm at 5.1GHz
Pave: +25.6 dBm @ 2% EVM with 802.16 WiMax 64QAM signal 9V,565mA
Gain: 10 dB @ 5 GHz
Single Supply and on-chip active bias for ease of operation & bias stability
Power On/Off Control with adjustable Vpc on-voltage & quiescent bias current
Applications:
•
•
•
WiMax
Broadband Wireless
Point-to-point Radios
Description:
The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage
InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16
WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier
Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power
detector built into the chip.
Electrical Specifications: @ Vcc=+9.0V, Icq=550mA, Vpc=4.1 V, Tbase=25 °C, Z0=50 ohm (1)
Parameter
Units
GHz
dB
Frequency Range
Gain (Typ)
4.9 - 5.4
10
@ 5 GHz
Gain Flatness(Typ )
Input Return Loss(Typ)
Output Return Loss(Typ)
Output P-1dB(Typ)
+/-dB
dB
dB
0.5
10
15
34.0
33.5
33.0
25.6
25.7
25.4
45
dBm
4.9 GHz, Icc=726mA
5.1 GHz, Icc=685mA
5.3 GHz, Icc=681mA
4.9 GHz, Icc=568mA
5.1 GHz, Icc=570mA
5.3 GHz, Icc=565mA
5.1 GHz
Pout @ 2% EVM
dBm
Output IP3(Typ)
@ 22 dBm/tone, 1 MHz separation
Power Control Voltage Vpc
dBm
V
4.1
< 2
12
+ 9
550
TBD
ON
OFF
ON
Power Control Current Ipc
Operating Bias Conditions: Vcc
Icq
mA
V
mA
Detector Output Voltage Vdet Range
V
(1) All Data is measured on 50 ohm Microstrip Carrier with external partial input match
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
MHA-495433
4.9- 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
With Active Bias
Advanced Data Sheet
June 2008 V0
Typical RF Performance: Vcc=+9V, Icq=550mA, Tbase=25 °C, Z0 = 50 Ohm, on Microstrip Carrier
Return Loss versus Frequency
Gain versus Frequency
Input
Output
14
12
10
8
0
-5
-10
-15
-20
-25
6
4
2
0
3
3.5
4
4.5
5
5.5
6
6.5
7
3
3.5
4
4.5
5
5.5
6
6.5
7
Frequency (GHz)
Frequency (GHz)
EVM vs Pout & Frequency, 802.16, 64 QAM
Isolation versus Frequency
4.9 GHz
5.1 GHz
5.3 GHz
0
5
4
3
2
1
0
-10
-20
-30
-40
-50
-60
15 16 17 18 19 20 21 22 23 24 25 26 27 28
3
3.5
4
4.5
5
5.5
6
6.5
7
Frequency (GHz)
Pout (dBm)
P-1dB versus Frequency
Output IM3 & IM5 versus Frequency
@ 22 dBm/tone
9V, Icq=550mA
8V,Icq=550mA
-35
35
34
33
32
31
30
-40
-45
-50
-55
-60
-65
-70
-75
IM3
IM5
4.5 4.6 4.7 4.8 4.9
5
5.1 5.2 5.3 5.4 5.5
4.7 4.8 4.9
5
5.1 5.2 5.3 5.4 5.5 5.6 5.7
Frequency (GHz)
Frequency (GHz)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
MHA-495433
4.9- 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
With Active Bias
Advanced Data Sheet
June 2008 V0
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
UNITS
V
ABSOLUTE MAXIMUM
Vcc
Collector Voltage
10
700
Icq
Quiescent Collector Current
DC Power Dissipation
RF Input Power
mA
W
Pdiss
Pin max
Toper
Tch
TBD
dBm
ºC
TBD
Operating Case/Lead Temperature Range
Channel Temperature
Storage Temperature
- 40 to + 85
170
ºC
Tstg
ºC
-60 to +150
*Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
MHA-495433
4.9- 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
With Active Bias
Advanced Data Sheet
June 2008 V0
Mechanical Information:
50 ohm Microstrip Carrier MMIC Assembly with external match & bypass capacitors
Bill of Materials:
C1, C2: 750 pF Ceramic Chip Capacitor
C3:
0.6 pF Ceramic Chip Capacitor
T1, T2:
50 ohm Microstrip Line on 15 mil thick Alumina Substrate
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
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