MDD255-16N1 [IXYS]

High Power Diode Modules; 大功率二极管模块
MDD255-16N1
型号: MDD255-16N1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

High Power Diode Modules
大功率二极管模块

二极管 局域网
文件: 总3页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MDD 255  
IFRMS = 2x 450 A  
IFAVM = 2x 270 A  
VRRM = 1200-2200 V  
High Power  
Diode Modules  
VRSM  
VDSM  
VRRM  
VDRM  
Type  
3
3
1
2
V
V
2
1300  
1500  
1700  
1900  
2100  
2300  
1200  
1400  
1600  
1800  
2000  
2200  
MDD 255-12N1  
MDD 255-14N1  
MDD 255-16N1  
MDD 255-18N1  
MDD 255-20N1  
MDD 255-22N1  
1
Symbol  
Test Conditions  
Maximum Ratings  
Features  
International standard package  
Direct copper bonded Al2O3-ceramic  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 100°C; 180° sine  
450  
270  
A
A
with copper base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered E 72873  
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
9500  
10200  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
8400  
9000  
A
A
Applications  
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
451 000  
437 000  
A2s  
A2s  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
Battery DC power supplies  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
353 000  
340 000  
A2s  
A2s  
Advantages  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Simple mounting  
Improved temperature and power  
cycling  
Reduced protection circuits  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
IISOL £ 1 mA  
Md  
Mounting torque (M6)  
Terminal connection torque (M8)  
Typical including screws  
4.5-7/40-62 Nm/lb.in.  
11-13/97-115 Nm/lb.in.  
Weight  
750  
g
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IRRM  
Test Conditions  
Characteristic Values  
M8x20  
TVJ = TVJM; VR = VRRM  
30  
mA  
V
VF  
IF = 600 A; TVJ = 25°C  
1.4  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.8  
0.6  
V
mW  
RthJC  
RthJK  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.140  
0.07  
0.18  
0.09  
K/W  
K/W  
K/W  
K/W  
other values  
see MCC 255  
QS  
IRM  
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/ms  
700  
260  
mC  
A
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 3  
MDD 255  
10000  
106  
A2s  
500  
A
450  
IFSM  
I2t  
VR = 0V  
DC  
A
180° sin  
120°  
60°  
50 Hz  
80 % VRRM  
TVJ = 45°C  
IFAVM  
8000  
400  
350  
300  
250  
200  
150  
100  
50  
30°  
TVJ = 150°C  
6000  
4000  
2000  
0
TVJ = 45°C  
TVJ = 150°C  
105  
0
0.001  
0.01  
0.1  
s
1
0
0
1
10  
0
25  
50  
75  
100  
TC  
125 °C150  
ms  
t
t
Fig. 1 Surge overload current  
IFSM: Crest value, t: duration  
Fig. 2 I2t versus time (1-10 ms)  
Fig. 3 Maximum forward current  
at case temperature  
500  
Ptot  
Fig. 4 Power dissipation versus  
forward current and ambient  
temperature (per diode)  
RthKA K/W  
W
0.1  
0.2  
0.3  
0.4  
0.6  
0.8  
1.2  
400  
300  
DC  
180° sin  
120°  
60°  
200  
100  
0
30°  
0
100  
200  
300  
400 A  
IFAVM  
25  
50  
75  
100  
°C
TA  
150  
1500  
Fig. 5 Single phase rectifier bridge:  
Power dissipation versus direct  
output current and ambient  
temperature  
Ptot  
RthKA K/W  
W
1250  
0.06  
0.08  
0.1  
0.15  
0.2  
0.3  
0.5  
R
L
R = resistive load  
L = inductive load  
1000  
750  
500  
250  
0
Circuit  
B2U  
2 x MDD255  
°C  
0
100  
200  
300  
400  
500 A  
IdAVM  
25  
50  
75  
100  
150  
TA  
© 2000 IXYS All rights reserved  
2 - 3  
MDD 255  
2500  
W
Fig. 6 Three phase rectifier bridge:  
Power dissipation versus direct  
output current and ambient  
temperature  
RthKA K/W  
0.03  
0.06  
0.1  
0.15  
0.2  
0.3  
0.4  
2000  
1500  
1000  
500  
0
Ptot  
Circuit  
B6U  
3 x MDD255  
0
200  
400  
600  
800  
IdAVM  
0
25  
50  
75  
100  
125  
TA  
150  
102  
102  
A
°C  
0.25  
Fig. 7 Transient thermal impedance  
junction to case (per diode)  
K/W  
0.20  
RthJC for various conduction angles d:  
ZthJC  
d
RthJC (K/W)  
0.15  
0.10  
0.05  
0.00  
DC  
180°  
120°  
60°  
0.139  
0.148  
0.156  
0.176  
0.214  
30°  
60°  
120°  
180°  
DC  
30°  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.0066  
0.0358  
0.0831  
0.0129  
0.00054  
0.098  
0.54  
10-3  
10-2  
10-1  
100  
101  
s
t
12  
0.30  
Fig. 8 Transient thermal impedance  
junction toheatsink(perdiode)  
K/W  
0.25  
RthJK for various conduction angles d:  
ZthJK  
d
RthJK (K/W)  
0.20  
0.15  
0.10  
0.05  
0.00  
DC  
180°  
120°  
60°  
0.179  
0.188  
0.196  
0.216  
0.254  
30°  
60°  
120°  
180°  
DC  
30°  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
5
0.0066  
0.0358  
0.0831  
0.0129  
0.04  
0.00054  
0.098  
0.54  
12  
10-3  
10-2  
10-1  
100  
101  
s
t
12  
© 2000 IXYS All rights reserved  
3 - 3  

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