M3770ZD240_技术文档

Date:- 15 Oct, 2014

Data Sheet Issue:- 2

Fast Recovery Diode

Type M3770Z#200 to M3770Z#300

Old Type No.: SM20-30CXC974

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_RRM

V_RSM

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

2000-3000

V

2100-3100

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

I_F(RMS)

I_F(d.c.)

I_FSM

Maximum average forward current, T_sink=55°C, (note 2)

Maximum average forward current. T_sink=100°C, (note 2)

Maximum average forward current. T_sink=100°C, (note 3)

Nominal RMS forward current, T_sink=25°C, (note 2)

D.C. forward current, T_sink=25°C, (note 4)

3770

A

2402

1416

A

7109

A

5991

A

Peak non-repetitive surge t_p=10ms, V_RM=60% V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=60% V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

Operating temperature range

44.0

kA

A²s

°C

I_FSM2

I²t

48.4

9.68 × 10⁶

11.7 × 10⁶

-40 to +150

-55 to +150

I²t

T_{j op}

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 150°C T_jinitial.

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 1 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

-

1.74 I_FM=4700A

V_FM

Maximum peak forward voltage

V

-

2.05 I_FM=7500A

1.190

V_T0

r_T

Threshold voltage

Slope resistance

-

V

m

V

-

0.118

-

18

24

di/dt = 1000A/µs, T_j=25°C

di/dt = 1000A/µs

V_FRM

Maximum forward recovery voltage

-

V

I_RRM

Q_rr

Q_ra

I_rm

Peak reverse current

-

2000

1100

320

7

150 Rated V_RRM

mA

µC

A

Recovered charge

-

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time, 50% Chord

-

1500

I_FM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, 50% Chord.

-

t_rr

-

µs

-

0.011 Double side cooled

0.022 Single side cooled

47

R_thJK

Thermal resistance, junction to heatsink

K/W

kN

-

F

Mounting force

Weight

27

-

1.7

1.2

-

Outline options ZC, ZT and ZY

Outline options ZD and ZV

W_t

kg

-

Notes:-

1) Unless otherwise indicated T_j=150°C.

Notes on rupture rated packages.

This product is available with a non-rupture rated package.

For additional details on these products, please consult factory.

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 2 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V_RRM

(V)

V_RSM

(V)

V_Rdc

(V)

20

24

30

2000

2400

3000

2100

2500

3100

1250

1450

1750

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T_jbelow 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of V_Fcharacteristic in Figure 1) are the coefficients of

the expression for the forward characteristic given below:

V_F A Bln(I_F)  C  I_F D I_F

where I_F= instantaneous forward current.

4.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig.(a) below.

(ii) Q_rris based on a 150s integration time.

150s

Q_rr i_rr.dt

I.e.



0

t₁

K Factor 

(iii)

t₂

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 3 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.

Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated

from:

T_SINK T_{j(MAX )} E 



k  f  R_{th(JK )}



Where k = 0.2314 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = Rated frequency in Hz at the original sink temperature.

R_th(JK)= d.c. thermal resistance (°C/W)

The total dissipation is now given by:

W W_(original) E f

(tot)

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the

charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation of this

snubber is shown below:

V_r

di

C_S

dt

R² 4

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R = Snubber resistance

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 4 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

V_{T 0} V  4 ff ²r W_AV

T 0

T

I_AV

2 ff ²r

T

Where V_T0= 1.19V, r_T= 0.118

ff = form factor (normally unity for fast diode applications)

T

W_AV

R

th

T  T_{j(MAX )}T_K

7.2 Calculation of V_Fusing ABCD Coefficients

The forward characteristic I_FVs V_F, on page 6 is represented in two ways;

(i)

(ii)

the well established V_T0and r_Ttangent used for rating purposes and

a set of constants A, B, C, and D forming the coefficients of the representative equation for V_Fin

terms of I_Fgiven below:

V_F A Bln(I_F)  C  I_F D I_F

The constants, derived by curve fitting software, are given in this report for both hot and cold

characteristics. The resulting values for V_Fagree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

0.596789

150°C Coefficients

0.423553

A

B

C

D

0.04632052

0.02954106

1.73642 ×10^-5

0.0140443

3.04052 ×10^-5

8.459116 ×10^-3

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings

shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 5 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Curves

Figure 1 – Forward characteristics of Limit device

Figure 2 – Maximum forward recovery voltage

10000

100

M3770Z#200-300

Issue 2

25°C

150°C

25°C

1000

10

100

1

100

0.5

1

1.5

2

2.5

1000

10000

Maximum instantaneous forward voltage - V_FM(V)

Rate of rise of forward current - di/dt (A/µs)

Figure 4 – Recovered charge, Q_ra(50% chord)

Figure 3 – Recovered charge, Q_rr

10000

M3770Z#200-300

Issue 2

T_j= 150°C

4000A

2000A

1000A

4000A

2000A

500A

1000A

500A

1000

10

100

1000

10

100

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 6 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Figure 5 – Maximum reverse current, I_rm

Figure 6 – Maximum recovery time, t_rr(50% chord)

10000

100

M3770Z#200-300

Issue 2

T_j= 150°C

4000A

2000A

1000A

500A

1000

10

4000A

2000A

1000A

500A

100

1

10

100

1000

10

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 – Reverse recovery energy per pulse

Figure 8 – Sine wave energy per pulse

10

1.00E+02

M3770Z#200-300

Issue 2

T_j= 150°C

V_R= 67%V_RRM

Cs = 0.5µF

6kA

4kA

3kA

2kA

1kA

1.00E+01

1.00E+00

1.00E-01

1.00E-02

4000A

2000A

1000A

500A

1

0.1

1.00E-05

1.00E-04

1.00E-03

1.00E-02

10

100

1000

Pulse width (s)

Commutation rate - di/dt (A/µs)

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 7 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Figure 9 – Sine wave frequency vs. pulse width

Figure 10 – Sine wave frequency vs. pulse width

1.00E+05

M3770Z#200-300

Issue 2

T_K= 55°C

T_K= 85°C

2kA

100% Duty Cycle

3kA

4kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

3kA

1.00E+04

1.00E+03

1.00E+02

4kA

6kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 11 – Square wave energy per pulse

Figure 12 – Square wave energy per pulse

1.00E+03

M3770Z#200-300

Issue 2

di/dt =500A/µs

T_j= 150°C

di/dt =100A/µs

T_j= 150°C

1.00E+02

1.00E+01

1.00E+02

6kA

4kA

3kA

2kA

1kA

1.00E+01

1.00E+00

1.00E-01

1.00E-02

6kA

4kA

1.00E+00

3kA

2kA

1kA

1.00E-01

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 8 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Figure 13 – Square wave frequency vs. pulse width

Figure 14 – Square wave frequency vs. pulse width

1.00E+05

M3770Z#200-300

Issue 2

2kA

3kA

di/dt =100A/µs

T_K=55°C

di/dt =500A/µs

T_K= 55°C

100% Duty Cycle

3kA

100% Duty Cycle

1.00E+04

4kA

6kA

1.00E+03

1.00E+02

1.00E+01

1.00E-05

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 – Square wave frequency vs. pulse width

Figure 16 – Square wave frequency vs. pulse width

1.00E+05

M3770Z#200-300

Issue 2

di/dt =100A/µs

T_K= 85°C

di/dt =500A/µs

1kA

2kA

3kA

T_K= 85°C

100% Duty Cycle

1.00E+04

3kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

4kA

6kA

1.00E+03

1.00E+02

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 9 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Figure 17 – Maximum surge and I²t ratings

1000000

1.00E+08

I²t: V_RRM10V

M3770Z#200-300

Issue 2

I²t: V_R=60% V_RRM

T_j(initial) = 150°C

100000

1.00E+07

I_FSM: V_RRM10V

I_FSM: V_R=60% V_RRM

10000

1.00E+06

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Figure 18 – Transient thermal impedance

0.1

M3770Z#200-300

Issue 2

SSC 0.022K/W

0.01

DSC 0.011K/W

0.001

0.0001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Time (s)

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 10 of 11

October 2014

Fast Recovery Diode Types M3770Z#200-300

Outline Drawing & Ordering Information

100A310

100A293

Outline options ZC, ZT and ZY

ORDERING INFORMATION

Outline options ZD and ZV

(Please quote 10 digit code as below)



M3770

0

Outline code

Voltage code

V_DRM/100

20-30

Fixed

Type Code

ZC = 37.7mm Clamp height, ZT = 37.7mm clamp height, rupture rated capsule,

ZY = 37.7mm Clamp height, extended rupture rated capsule

ZD = 26mm Clamp height, ZV = 26mm clamp height, rupture rated capsule

Fixed code

Typical order code: M3770ZC200 – 2000V V_RRM, 37.7mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

D-68623 Lampertheim

Tel: +49 6206 503-0

IXYS UK Westcode Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

E-mail: sales@ixysuk.com

IXYS Long Beach

IXYS Long Beach, Inc

IXYS Corporation

1590 Buckeye Drive

2500 Mira Mar Ave, Long Beach

CA 90815

www.ixysuk.com

Milpitas CA 95035-7418

Tel: +1 (408) 457 9000

Tel: +1 (562) 296 6584

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Fax: +1 (562) 296 6585

E-mail: service@ixyslongbeach.com

www.ixys.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except

with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior

notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the

conditions and limits contained in this report.

Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2

Page 11 of 11

October 2014

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.


型号：	M3770ZD240
厂家：	IXYS CORPORATION
描述：	DIODE 3775 A, 2400 V, SILICON, RECTIFIER DIODE, Rectifier Diode
文件：	总12页 (文件大小：683K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M3770ZD240 [IXYS]

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