M2273VC320 [IXYS]

Rectifier Diode, 1 Phase, 1 Element, 2273A, 3200V V(RRM), Silicon,;


型号：	M2273VC320
厂家：	IXYS CORPORATION
描述：	Rectifier Diode, 1 Phase, 1 Element, 2273A, 3200V V(RRM), Silicon, 快速恢复二极管
文件：	总11页 (文件大小：506K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 26 Aug, 2003

Data Sheet Issue:- 1

Fast Recovery Diode

Types M2273V#300 to M2273V#360

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_RRM

V_RSM

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

3000-3600

3100-3700

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

(note 6)

I_F(AV)M

Maximum mean forward current, T_sink=55°C, (note 2)

Maximum mean forward current. T_sink=100°C, (note 2)

Maximum mean forward current. T_sink=100°C, (note 3)

2273

1479

881

I_F(RMS)MMaximum RMS forward current, T_sink=25°C, (note 2)

4265

I_F(d.c.)

I_FSM

I_FSM2

I²t

D.C. forward current, T_sink=25°C, (note 4)

3663

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

28.0

A²s

°C

≤

30.8

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

3.92×10⁶

4.74×10⁶

-40 to +150

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

T_{j op}

T_stg

Operating temperature range

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 150°C T_jinitial.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 1 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Characteristics

UNITS

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

(Note 1)

2.90 I_FM=6800A

V_FM

Maximum peak forward voltage

2.40

1.239

0.244

I_FM=4550A

V_T0

r_T

Threshold voltage

Slope resistance

Ω

di/dt = 1000A/µs, T_j=25°C

di/dt = 1000A/µs

V_FRM

Maximum forward recovery voltage

I_RRM

Q_rr

Q_ra

I_rm

Peak reverse current

150 Rated V_RRM

µC

Reverse Recovery Charge

Recovered charge, 50% Chord

Reverse Recovery Current

Reverse recovery time, 50% Chord

2500

1300

300

8.5

1500

_FM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, 50% Chord.

t_rr

µs

0.016 Double side cooled

0.032 Single side cooled

R_thJK

Thermal resistance, junction to heatsink

Mounting force

K/W

1000

800

Outline option VC

Outline option VF

W_t

Weight (note 2)

Notes:-

1) Unless otherwise indicated T_j=150°C.

2) The outline code is denoted by a ‘#’ in the part number. See ordering information for details of outline

codes.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 2 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V_RRM

V_RSM

(V)

V_Rdc

(V)

Voltage Grade

(V)

3000

3200

3400

3600

3100

3300

3500

3600

1700

1800

1850

1900

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T_jbelow 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of V_Fcharacteristic in Figure 1) are the coefficients of

the expression for the forward characteristic given below:

V_FA B ln(I ) C I

D I

= + ⋅

+ ⋅ + ⋅

where I_F= instantaneous forward current.

4.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig.(a) below.

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

I.e.

t₁

t₂

K Factor =

(iii)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 3 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.

Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated

from:

T_SINK= T_{j(MAX )}− E ⋅

[

k + f ⋅ R_thJK

]

Where = 0.2314 (°C/W)/s

= Area under reverse loss waveform per pulse in joules (W.s.)

= Rated frequency in Hz at the original sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W)

The total dissipation is now given by:

W_(tot)= W_{(original )}+ E ⋅ f

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the

charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

damped snubber, connected across diode anode to cathode. The formula used for the calculation of this

snubber is shown below:

V_r

R²= 4⋅

C_S⋅ ^di

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R = Snubber resistance

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 4 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

−V_o+ V_o+ 4⋅ ff ²⋅ r ⋅W

I_AV=

2⋅ ff ²⋅ r

Ω

Where _T0=1.239V, _T=0.244m

ff _{= form factor (normally unity for fast diode applications)}

∆

W_AV=

∆T = T_{j(MAX )}−T_K

7.2 Calculation of V_Fusing ABCD Coefficients

The forward characteristic I_FVs V_F, on page 6 is represented in two ways;

(i)

the well established V_T0and r_Ttangent used for rating purposes and

a set of constants A, B, C, and D forming the coefficients of the representative equation for V_Fin

terms of I_Fgiven below:

(ii)

V_F= A + B ⋅ln(I_F) + C ⋅ I_F+ D ⋅ I_F

The constants, derived by curve fitting software, are given in this report for hot characteristics. The

resulting values for V_Fagree with the true device characteristic over a current range, which is limited to

that plotted.

125°C Coefficients

0.266784016

0.09483974

1.47257×10^-4

9.640009×10^-3

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings

shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 5 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 2 – Maximum forward recovery voltage

Curves

Figure 1 – Forward characteristics of Limit device

10000

1000

M2273V#300-360

Issue 1

150°C

100

25°C

1000

100

0.5

1.5

2.5

3.5

100

1000

10000

Maximum instantaneous forward voltage - V_FM(V)

Rate of rise of forward current - di/dt (A/µs)

Figure 3 - Recovered charge, Q_rr

Figure 4 - Recovered charge, Q_ra(50% chord)

10000

M2273V#300-360

Issue 1

T_j= 150°C

4000A

2000A

1000A

500A

T_j= 150°C

4000A

2000A

1000A

500A

1000

100

1000

100

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 6 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 6 - Maximum recovery time, t_rr(50% chord)

Figure 5 - Maximum reverse current, I_rm

10000

100

M2273V#300-360

Issue 1

T_j= 150°C

4000A

2000A

1000A

500A

1000

100

4000A

2000A

1000A

500A

100

1000

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 – Reverse recovery energy per pulse

Figure 8 - Sine wave energy per pulse

10000

1.00E+03

M2273V#300-360

Issue 1

T_j= 150°C

V_RM= 67% V_RRM

No snubber

4000A

2000A

T_j= 150°C

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

5kA

4kA

1000A

500A

2kA

1kA

500A

1000

100

1.00E-05

1.00E-04

1.00E-03

1.00E-02

100

1000

10000

Pulse width (s)

Commutation rate - di/dt (A/µs)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 7 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 10 - Sine wave frequency vs. pulse width

Figure 9 - Sine wave frequency vs. pulse width

1.00E+05

M2273V#300-360

500A

Issue 1

T_K= 55°C

T_K= 85°C

1kA

100% Duty Cycle

1kA

100% Duty Cycle

1.00E+04

2kA

4kA

1.00E+03

5kA

1.00E+02

5kA

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 11 – Square wave frequency vs pulse width

Figure 12 - Square wave frequency vs pulse width

1.00E+05

M2273V#300-360

Issue 1

di/dt =100A/µs

di/dt =500A/µs

500A

1kA

T_K=55°C

500A

1kA

T_K= 55°C

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

1.00E+03

1.00E+02

1.00E+01

2kA

4kA

2kA

5kA

4kA

5kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

Pulse width (s)

1.00E-02

Pulse width (s)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 8 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 14 - Square wave frequency vs pulse width

Figure 13 - Square wave frequency vs pulse width

1.00E+05

M2273V#300-360

Issue 1

di/dt =100A/µs

T_K= 85°C

di/dt =500A/µs

T_K= 85°C

500A

1kA

1.00E+04

100% Duty Cycle

2kA

1.00E+04

1kA

100% Duty Cycle

2kA

4kA

1.00E+03

1.00E+02

1.00E+01

4kA

5kA

1.00E+02

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave energy per pulse

Figure 16 - Square wave energy per pulse

1.00E+03

M2273V#300-360

Issue 1

di/dt =100A/µs

T_j= 150°C

Issue 1

di/dt =500A/µs

T_j= 150°C

5kA

4kA

1.00E+02

1.00E+01

1.00E+02

2kA

1kA

500A

1.00E+01

1.00E+00

1.00E-01

5kA

4kA

1.00E+00

2kA

1kA

500A

1.00E-01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 9 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 17 – Maximum surge and I²t ratings

100000

1.00E+08

I²t: V_RRM≤10V

I_FSM: V_R=60% V_RRM

I²t: V_R=60% V_RRM

10000

1000

1.00E+07

I_FSM: V_RRM≤10V

T_j(initial) = 150°C

M2273V#300-360

Issue 1

1.00E+06

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Figure 18 – Transient thermal impedance

0.1

M2273V#300-360

Issue 1

SSC 0.032K/W

DSC 0.016K/W

0.01

0.001

0.0001

0.001

0.01

0.1

100

Time (s)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 10 of 11

August, 2003

WESTCODE ^AnIXYS Company

Fast Recovery Diode Types M2273V#300 to M2273V#360

Outline Drawing & Ordering Information

Outline option VC

Outline option VF

ORDERING INFORMATION

(Please quote 10 digit code as below)

M2273

VC or VF

♦♦

Voltage code

V_RRM/100

30-36

Outline code

Fixed

VC=33.1mm height

VF=26.5mm height

Fixed code

Type Code

Typical order code: M2273VC340 – 3400V V_RRM, 33.1mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

E-mail: WSL.sales@westcode.com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

www.westcode.com

Santa Clara CA 95054 USA

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

Fax: +1 (562) 595 8182

www.ixys.com

E-mail: sales@ixys.net

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1

Page 11 of 11

August, 2003

M2273VC320 [IXYS]

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