L426 [IXYS]
IGBT Modules; IGBT模块
| 型号： | L426 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Modules |
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MWI 200-06 A8
IC25
VCES
VCE(sat) typ.= 2.0 V
= 225 A
= 600 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
1
2
5
6
9
10
19
17
15
3
4
7
8
11
12
14, 20
Features
IGBTs
• NPT IGBT technology
Symbol
VCES
Conditions
Maximum Ratings
• low saturation voltage
• low switching losses
TVJ = 25°C to 150°C
600
20
V
V
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
VGES
IC25
IC80
TC = 25°C
TC = 80°C
225
155
A
A
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
RBSOA
VGE = 15 V; RG = 1.5 Ω; TVJ = 125°C
ICM
=
400
A
µs
W
Clamped inductive load; L = 100 µH
VCEK ≤ VCES
tSC
(SCSOA)
VCE = VCES; VGE = 15 V; RG = 1.5 Ω; TVJ = 125°C
non-repetitive
10
Advantages
Ptot
TC = 25°C
675
• space savings
• reduced protection circuits
• package designed for wave soldering
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Typical Applications
min.
typ. max.
• AC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.0
2.3
2.5
V
V
VGE(th)
ICES
IC = 4 mA; VGE = VCE
4.5
6.5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.8 mA
mA
1.5
IGES
VCE = 0 V; VGE
=
20 V
400 nA
td(on)
tr
td(off)
tf
Eon
Eoff
180
50
300
40
4.6
6.3
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 200 A
VGE = 15 V; RG = 1.5 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 200 A
9.0
670
nF
nC
RthJC
(per IGBT)
0.18 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 4
MWI 200-06 A8
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
260
165
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.1 V; R0 = 6 mΩ
IF = 200 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.9
1.5
2.1
V
V
IRM
trr
IF = 120 A; diF/dt = -1000 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
56
100
A
ns
Free wheeling Diode (typ. at TJ = 125°C)
V0 = 1.1 V; R0 = 2 mΩ
RthJC
(per diode)
0.3 K/W
Thermal Response
Module
Symbol
Conditions
Maximum Ratings
TVJ
TJM
Tstg
operating
-40...+125
+150
-40...+125
°C
°C
°C
IGBT (typ.)
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
2500
3 - 6
V~
Cth1 = 0.397 J/K; Rth1 = 0.131 K/W
Cth2 = 2.243 J/K; Rth2 = 0.049 K/W
Mounting torque (M5)
Nm
Free wheeling Diode (typ.)
Cth1 = 0.281 J/K; Rth1 = 0.236 K/W
Cth2 = 1.945 J/K; Rth2 = 0.064 K/W
Symbol
Rpin-chip
Conditions
Characteristic Values
min. typ. max.
1.8
mΩ
dS
dA
Creepage distance on surface
Strike distance in air
10
10
mm
mm
RthCH
with heatsink compound
0.01
300
K/W
g
Weight
Dimensions in mm (1 mm = 0.0394")
© 2004 IXYS All rights reserved
2 - 4
MWI 200-06 A8
300
A
250
300
A
250
13 V
11 V
15 V
13 V
VGE = 17 V
VGE = 17 V
11 V
15 V
TVJ = 25°C
IC
TVJ = 125°C
IC
200
150
100
50
200
150
100
50
9 V
9 V
0
0
V
0
1
2
3
V
4
0
1
2
3
4
VCE
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
600
A
400
A
VCE = 20 V
500
400
300
200
100
0
IF
300
200
100
0
IC
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
9
TVJ = 25°C
V
0
1
2
6
7
8
10
VGE
11
12
V
VF
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
180
60
ns
15
IRM
TVJ = 125°C
V
VCE = 300 V
IC = 200 A
VR
IF
=
300 V
120 A
A
12
trr
=
IRM
trr
VGE
120
40
9
6
3
0
60
0
20
0
MWI200-06A8
0
200
400
600
A/µs 1000
0
100 200 300 400 500 6n0C0 700
QG
-di/dt
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2004 IXYS All rights reserved
3 - 4
MWI 200-06 A8
16
16
VCE = 300 V
VGE 15 V
VCE = 300 V
VGE 15 V
mJ
mJ
=
=
RG = 1.5 Ω
TVJ = 125°C
RG = 1.5 Ω
TVJ = 125°C
12
8
12
8
Eoff
Eon
4
4
0
0
A
A
0
100
200
300
IC
400
0
100
200
300
400
IC
Fig. 7 Typ. turn on energy
versus collector current
Fig. 8 Typ. turn off energy
versus collector current
20
8
VCE = 300 V
VGE 15 V
mJ
=
mJ
16
12
8
Eoff
IC = 200 Α
TVJ = 125°C
Eon
6
4
2
VCE = 300 V
VGE
= 15 V
IC = 200 Α
TVJ = 125°C
4
0
Ω
0
4
8
12
RG
16 Ω 20
0
4
8
12
16
20
RG
Fig. 9 Typ. turn on energy
versus gate resistor
Fig.10 Typ. turn off energy
versus gate resistor
500
A
1
diode
IGBT
K/W
400
0.1
ZthJC
ICM
300
200
100
0
0.01
single pulse
RG = 1.5 Ω
TVJ = 125°C
0.001
MWI200-06A8
0.0001
0.0001 0.001
0.01
0.1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
© 2004 IXYS All rights reserved
4 - 4
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