L408 [IXYS]
HiPerFREDTM Epitaxial Diode with soft recovery; HiPerFREDTM外延二极管具有软恢复
| 型号： | L408 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFREDTM Epitaxial Diode with soft recovery |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP 8-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A
VRRM = 600 V
trr = 30 ns
TO-220 AC
VRSM
V
VRRM
V
Type
A
C
C
A
600
600
DSEP 8-06B
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAVM
35
10
A
A
TC = 125°C; rectangular, d = 0.5
IFSM
EAS
TVJ = 45°C; tp = 10 ms (50 Hz), sine
50
A
• Soft recovery behaviour
• Epoxy meets UL 94V-0
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
0.1
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
Applications
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
°C
°C
°C
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
Ptot
TC = 25°C
mounting torque
typical
60
0.4...0.6
2
W
Nm
g
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
Md
Weight
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Symbol
Conditions
Characteristic Values
typ.
max.
Advantages
IR
①
②
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
60
0.25
µA
mA
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
VF
IF = 10 A;
TVJ = 150°C
TVJ = 25°C
1.66
2.66
V
V
RthJC
RthCH
2.5
2.4
K/W
K/W
• Low IRM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch
0.5
30
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V; TVJ = 25°C
ns
IRM
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs
TVJ = 100°C
A
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified:
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
DSEP 8-06B
30
250
nC
10
A
TVJ = 100°C
VR = 300 V
IF = 5 A
A
IF = 10 A
IF = 20 A
25
200
8
6
4
2
0
IRM
TVJ = 150°C
TVJ = 100°C
IF
Qr
20
15
10
5
IF = 5 A
IF = 10 A
IF = 20 A
150
100
50
TVJ = 100°C
VR = 300 V
TVJ = 25°C
0
0
100
A/µs
-diF/dt
0
1
2
3
V
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
60
0.3
ns
TVJ = 100°C
TVJ = 100°C
V
100
µs
IF = 10 A
VR = 300 V
tfr
VFR
trr
1.5
Kf
40
20
0
0.2
0.1
0.
IF = 5 A
IF = 10 A
IF = 20 A
80
60
40
1.0
IRM
tfr
VFR
0.5
Qr
0.0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
1
i
Rthi (K/W)
ti (s)
1
2
3
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
ZthJC
0.1
0.01
DSEP 8-06B
NOTE: Fig. 2 to Fig. 6 shows typical values
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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