KX091TC360 [IXYS]

Silicon Controlled Rectifier, 6159A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element;
KX091TC360
型号: KX091TC360
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Silicon Controlled Rectifier, 6159A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element

文件: 总11页 (文件大小:318K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date:- 4 Dec, 2003  
Data Sheet Issue:- 1  
WESTCODE  
IXYS  
An  
Company  
Prospective Data  
Medium Voltage Thyristor  
Types KX091T#360 to KX091T#420  
(Development Type Number)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
3600-4200  
3600-4200  
3600-4200  
3700-4300  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current, TK=55°C, (note 2)  
Maximum average on-state current. TK=85°C, (note 2)  
Maximum average on-state current. TK=85°C, (note 3)  
Nominal RMS on-state current, TK=25°C, (note 2)  
D.C. on-state current, TK=25°C, (note 4)  
3147  
2195  
1360  
6159  
5469  
36  
A
A
A
A
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
A/µs  
V
ITSM2  
40  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
×
6
6.48 10  
I2t  
×
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
8.00 10  
6
Critical rate of rise of on-state current (continuous, 50Hz), (Note 6)  
Critical rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)  
Critical rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
150  
300  
(di/dt)cr  
600  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
5
W
Peak forward gate power  
50  
W
Tj op  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 1 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS  
UNITS  
(Note 1)  
VTM  
VTM  
VT0  
rT  
Maximum peak on-state voltage  
Maximum peak on-state voltage  
Threshold voltage  
-
-
1.85 ITM=4000A  
2.95 ITM=9440A  
1.052  
V
V
V
-
-
-
-
Slope resistance  
-
-
0.201  
m
(dv/dt)cr Critical rate of rise of off-state voltage  
1000  
-
-
VD=80% VDRM, linear ramp, gate o/c  
µ
V/ s  
IDRM  
IRRM  
Vtr  
Peak off-state current  
Peak reverse current  
On-state recovery voltage  
Gate trigger voltage  
-
-
-
-
-
-
-
-
150 Rated VDRM  
150 Rated VRRM  
mA  
mA  
V
-
18  
-
-
IT=2×IT(AV)M, tp=10ms, Tcase=25°C  
VGT  
IGT  
VGD  
IH  
3.0  
600  
V
Tj=25°C  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
V
Gate non-trigger voltage  
Holding current  
-
0.25 Rated VDRM  
1000 Tj=25°C  
-
mA  
µs  
µs  
µC  
µC  
A
tgd  
Gate-controlled turn-on delay time  
Turn-on time  
1.0  
3.5  
14000  
9000  
320  
55  
2.0  
VD=60% VDRM, IT=2000A, di/dt=10A/µs,  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgt  
-
-
-
-
-
5.0  
Qrr  
Qra  
Irm  
Recovered charge  
-
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time  
10000  
I
TM=4000A, tp=2000µs, di/dt=10A/µs,  
Vr=100V  
-
-
trr  
µs  
ITM=4000A, tp=2000µs, di/dt=10A/µs,  
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs  
-
-
750  
-
-
tq  
Turn-off time  
µs  
I
TM=4000A, tp=2000µs, di/dt=10A/µs,  
1500  
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs  
-
-
-
0.0085 Double side cooled  
0.0170 Single side cooled  
77  
K/W  
K/W  
kN  
RthJK  
F
Thermal resistance, junction to heatsink  
-
-
Mounting force  
Weight  
63  
-
1.23  
-
-
Outlines TC & TT  
Outlines TD & TV  
Wt  
kg  
-
1.70  
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) For other clamp forces consult factory.  
Notes on rupture rated packages.  
This product is available with a non-rupture rated package.  
For additional details on these products, please consult factory.  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 2 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
V
DRM VDSM VRRM  
VRSM  
V
VD VR  
DC V  
2160  
2280  
2400  
2520  
Voltage Grade  
V
36  
38  
40  
42  
3600  
3800  
4000  
4200  
3700  
3900  
4100  
4300  
2.0 Extension of Voltage Grades  
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
4.0 Repetitive dv/dt  
Standard dv/dt is 1000V/µs.  
5.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V  
is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
6.0 Frequency Ratings  
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum  
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.  
7.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
8.0 Square wave frequency ratings  
These ratings are given for load component rate of rise of on-state current of 50A/µs.  
9.0 Computer Modelling Parameters  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 3 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
9.1 Device Dissipation Calculations  
T  
Rth  
2
VT 0 + VT 0 + 4ff 2 r WAV  
WAV =  
T
IAV =  
and:  
2ff 2 r  
T
T = Tj max TK  
Where VT0=1.052V, rT=0.201m ,  
R
= Supplementary thermal impedance, see table below and  
th  
ff  
= Form factor, see table below.  
Supplementary Thermal Impedance  
30° 60° 90° 120°  
Conduction Angle  
180°  
270°  
d.c.  
Square wave Double Side Cooled  
Square wave Single Side Cooled  
Sine wave Double Side Cooled  
Sine wave Single Side Cooled  
0.00923 0.00915 0.00907 0.00899 0.00884 0.00864 0.0085  
0.01801 0.01792 0.01783 0.01775 0.01760 0.01739 0.0170  
0.00917 0.00906 0.00898 0.00890 0.00867  
0.01794 0.01782 0.01773 0.01765 0.01742  
Form Factors  
Conduction Angle  
Square wave  
Sine wave  
30°  
3.464  
3.98  
60°  
2.449  
2.778  
90°  
2
2.22  
120°  
1.732  
1.879  
180°  
1.414  
1.57  
270°  
1.149  
d.c.  
1
9.2 D.C. Thermal Impedance Calculation  
p=n  
t  
τ p  
r = r 1e  
t
p
p=1  
p = 1 n, n  
to  
Where  
is the number of terms in the series and:  
t = Duration of heating pulse in seconds.  
rt  
= Thermal resistance at time t.  
r
p
= Amplitude of pth term.  
τ
p  
= Time Constant of rth term.  
The coefficients for this device are shown in the tables below:  
D.C. Double Side Cooled  
Term  
rp  
τp  
1
2
3
4.934536×10-3  
0.8203239  
2.693673×10-3  
8.295909×10-4  
0.0170874  
0.1170407  
D.C. Single Side Cooled  
2
Term  
rp  
τp  
1
3
4
0.01011545  
5.990464  
3.424005×10-3  
1.10841  
2.491583×10-3  
0.140561  
1.174174×10-3  
0.02103968  
9.3 Calculating VT using ABCD Coefficients  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 4 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;  
(i)  
the well established VT0 and rT tangent used for rating purposes and  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
(ii)  
VT A B ln IT C IT D IT  
= + ⋅ ( )+ ⋅ + ⋅  
The constants, derived by curve fitting software, are given below for both characteristics. The resulting  
values for VT agree with the true device characteristic over a current range, which is limited to that plotted.  
25°C Coefficients  
125°C Coefficients  
A
B
C
D
1.7361266  
-0.08956302  
1.128361×10-4  
6.858041×10-3  
A
B
C
D
1.4384534  
-0.04787491  
2.141882×10-4  
-7.609907×10-4  
10.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
11.0 Reverse recovery ratings  
(i)  
Qra is based on 50% Irm chord as shown in Fig. 1  
µ
(ii)  
Qrr is based on a 150 s integration time i.e.  
150µs  
Qrr = irr .dt  
0
t1  
t2  
K Factor =  
(iii)  
Fig. 1  
12.0 Duty cycle lines  
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be  
included as parallel to the first.  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 5 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Curves  
Figure 1 – On-state characteristics of Limit device  
Figure 2 – Transient thermal impedance  
0.1  
10000  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
TD Issue 1  
SSC  
0.0170K/W  
0.01  
DSC  
0.0085K/W  
Tj = 125°C  
Tj = 25°C  
0.001  
0.0001  
1000  
0.00001  
100  
0.000001  
0
0.5  
1
1.5  
2
2.5  
3
1E-05 0.0001 0.001  
0.01  
Time (s)  
0.1  
1
10  
100  
Instantaneous On-state voltage - VTM (V)  
Figure 3 – Gate characteristics - Trigger limits  
Figure 4 – Gate characteristics - Power curves  
12  
6
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
Tj=25°C  
TD Issue 1  
Tj=25°C  
Max VG dc  
10  
8
5
Max VG dc  
4
PG Max 50W dc  
IGT, VGT  
6
3
4
2
PG 5W dc  
2
1
IGD, VGD  
Min VG dc  
Min VG dc  
1.25 1.5  
0
0
0
5
10  
15  
0
0.25  
0.5  
0.75  
1
Gate Current - IG (A)  
Gate Current - IG (A)  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 6 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Figure 5 – Total recovered charge, Qrr  
Figure 6 – Recovered charge, Qra (50% chord)  
100000  
100000  
KX091T#360-420  
TD Issue 1  
KX091T#360-420  
TD Issue 1  
Tj=125°C  
Tj=125°C  
4000A  
3000A  
2000A  
1000A  
4000A  
3000A  
2000A  
1000A  
10000  
10000  
1000  
1000  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 7 – Peak reverse recovery current, Irm  
Figure 8 – Maximum recovery time, trr (50% chord)  
10000  
1000  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
Tj=125°C  
TD Issue 1  
Tj=125°C  
4000A  
3000A  
2000A  
1000A  
1000  
100  
4000A  
3000A  
2000A  
1000A  
100  
10  
10  
1
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 7 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Figure 9 – On-state current vs. Power dissipation –  
Double Side Cooled (Sine wave)  
Figure 10 – On-state current vs. Heatsink  
temperature – Double Side Cooled (Sine wave)  
12000  
150  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
180°  
120°  
TD Issue 1  
90°  
60°  
30°  
10000  
8000  
6000  
4000  
2000  
0
125  
100  
75  
50  
25  
30°  
60°  
90° 120° 180°  
0
0
1000  
2000  
3000  
4000  
0
1000  
2000  
3000  
4000  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 11 – On-state current vs. Power dissipation –  
Double Side Cooled (Square wave)  
Figure 12 – On-state current vs. Heatsink  
temperature – Double Side Cooled (Square wave)  
12000  
150  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
TD Issue 1  
10000  
125  
8000  
100  
30°  
6000  
4000  
2000  
0
75  
d.c.  
270°  
180°  
120°  
90°  
60°  
90°  
120°  
180°  
270°  
60°  
d.c.  
50  
25  
0
30°  
0
1000  
2000  
3000  
4000  
5000  
6000  
0
1000  
2000  
3000  
4000  
5000  
6000  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 8 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Figure 13 – On-state current vs. Power dissipation –  
Single Side Cooled (Sine wave)  
Figure 14 – On-state current vs. Heatsink  
temperature – Single Side Cooled (Sine wave)  
6000  
150  
KX091T#360-420  
TD Issue 1  
KX091T#360-420  
180°  
120°  
90°  
60°  
TD Issue 1  
30°  
5000  
4000  
3000  
2000  
1000  
0
125  
100  
75  
50  
25  
30°  
60° 90° 120° 180°  
0
0
500  
1000  
1500  
2000  
2500  
3000  
0
500  
1000  
1500  
2000  
2500  
3000  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 15 – On-state current vs. Power dissipation –  
Single Side Cooled (Square wave)  
Figure 16 – On-state current vs. Heatsink  
temperature – Single Side Cooled (Square wave)  
150  
6000  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
TD Issue 1  
125  
5000  
100  
4000  
30°  
60°  
90°  
d.c.  
270°  
180°  
120°  
180°  
270°  
d.c.  
75  
50  
25  
0
3000  
2000  
1000  
0
120°  
90°  
60°  
30°  
0
1000  
2000  
3000  
4000  
0
1000  
2000  
3000  
4000  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 9 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Figure 17 – Square Wave Frequency Ratings  
Figure 18 – Sine Wave Frequency Ratings  
1.00E+05  
1.00E+05  
KX091T#360-420  
KX091T#360-420  
TD Issue 1  
TD Issue 1  
di/dt=50A/µs  
TK=55°C  
TK=55°C  
1000A  
1000A  
1500A  
100% Duty Cycle  
1500A  
2000A  
1.00E+04  
1.00E+04  
2000A  
3000A  
100% Duty Cycle  
3000A  
5000A  
1.00E+03  
8000A  
1.00E+03  
5000A  
8000A  
1.00E+02  
1.00E+02  
1.00E+01  
1.00E+01  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 19 - Maximum surge and I2t Ratings  
Gate may temporarily lose control of conduction angle  
100000  
10000  
1000  
1.00E+08  
I2t: VRRM 10V  
I2t: 60% VRRM  
ITSM: VRRM 10V  
1.00E+07  
ITSM: 60% VRRM  
Tj (initial) = 125°C  
KX091T#360-420  
TD Issue 1  
1.00E+06  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 10 of 11  
December, 2003  
WESTCODE An IXYS Company  
Medium Voltage Thyristor Types KX091T#360 to KX091T#420  
Outline Drawing & Ordering Information  
Outline options TC and TT  
Outline options TD and TV  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
  
  
KX091  
0
Outline Code  
Voltage code  
Fixed turn-off  
Fixed  
TC=26.1mm height, TT=26.1mm height, rupture rated  
VDRM/100  
36-42  
Type Code  
time code  
TD=33.1mm height, TV=33.1mm height, rupture rated  
Typical order code: KX091TT400 – 4000V VDRM, VRRM, 26.1mm clamp height, rupture rated capsule.  
IXYS Semiconductor GmbH  
Edisonstraße 15  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
WESTCODE  
Fax: +49 6206 503-627  
Fax: +44 (0)1249 659448  
An IXYS Company  
E-mail: marcom@ixys.de  
E-mail: WSL.sales@westcode,com  
IXYS Corporation  
Westcode Semiconductors Inc  
3270 Cherry Avenue  
3540 Bassett Street  
www.westcode.com  
Santa Clara CA 95054 USA  
Tel: +1 (408) 982 0700  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
www.ixys.com  
E-mail: WSI.sales@westcode.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily  
subject to the conditions and limits contained in this report.  
Prospective Data Sheet. Types KX091T#360 to KX091T#420 Issue 1  
Page 11 of 11  
December, 2003  

相关型号:

KX091TC380

Silicon Controlled Rectifier, 6159 A, 3800 V, SCR
IXYS

KX091TC400

Silicon Controlled Rectifier, 6159A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element
IXYS

KX091TC420

Silicon Controlled Rectifier, 6159A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element
IXYS

KX091TD380

Silicon Controlled Rectifier, 6159A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element
IXYS

KX091TD420

Silicon Controlled Rectifier, 6159A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element
IXYS

KX091TT400

Silicon Controlled Rectifier, 6159 A, 4000 V, SCR
IXYS

KX091TV360

Silicon Controlled Rectifier, 6159A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element
IXYS

KX091TV380

Silicon Controlled Rectifier, 6159 A, 3800 V, SCR
IXYS

KX091TV400

Silicon Controlled Rectifier, 6159A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element
IXYS

KX091TV420

Silicon Controlled Rectifier, 6159A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element
IXYS

KX094FC450

Silicon Controlled Rectifier, 7622A I(T)RMS, 4500V V(DRM), 4500V V(RRM), 1 Element
IXYS

KX094FC460

暂无描述
IXYS