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IXTH96N20P [IXYS]

N-Channel Engancement Mode; N沟道Engancement模式

IXTH96N20P


元器件型号：	IXTH96N20P
生产厂家：	IXYS CORPORATION
描述和应用：	N-Channel Engancement Mode N沟道Engancement模式
PDF文件：	总5页 (文件大小：605K)
下载文档：	下载PDF数据表文档文件
型号参数：IXTH96N20P参数

IXTH96P085T

TrenchPTM Power MOSFETs P-Channel Enhancement Mode

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55 IXYS

IXTH9N100

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-218VAR

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18 ETC

IXTH9N100

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH9N95

TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 9A I(D) | TO-218VAR

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20 ETC

IXTH9N95

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTI10N60P

Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN

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1 IXYS

IXTI12N50P

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN

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0 IXYS

IXTI12N50P

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN

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0 LITTELFUSE

IXTI76N25T

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

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29 IXYS

IXTJ36N20

Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PIN

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0 LITTELFUSE

IXTJ36N20

Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PIN

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0 IXYS

IXTK100N25P

PolarHT Power MOSFET N-Channel Enhancement Mode

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54 IXYS

IXTK102N30P

PolarHT Power MOSFET

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51 IXYS

IXTK102N30P

Power Field-Effect Transistor, 102A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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1 LITTELFUSE

IXTK102N65X2

Power Field-Effect Transistor,

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0 IXYS

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