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IXTH200N10T

更新时间：2024-09-18 12:35:47
品牌：IXYS
描述：TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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IXTH200N10T 概述

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TrenchMVTM功率MOSFET N沟道增强型额定雪崩 MOS管 功率场效应晶体管

IXTH200N10T 规格参数

是否无铅： 不含铅生命周期：Transferred
零件包装代码：TO-247包装说明：PLASTIC PACKAGE-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：7.93
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：1500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：200 A
最大漏极电流 (ID)：200 A最大漏源导通电阻：0.0055 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：550 W
最大脉冲漏极电流 (IDM)：500 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IXTH200N10T 数据手册

通过下载IXTH200N10T数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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TrenchMVTM Power  
MOSFET  
VDSS = 100V  
ID25 = 200A  
RDS(on) ≤ 5.5mΩ  
IXTH200N10T  
IXTQ200N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
G
D
(TAB)  
S
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
200  
75  
A
A
A
TO-3P (IXTQ)  
500  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
40  
1.5  
A
J
EAS  
PD  
G
D
550  
W
S
(TAB)  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
G = Gate  
S = Source  
D
TAB  
=
=
Drain  
Drain  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mountingtorque  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
6.0  
5.5  
g
g
ꢀInternationalstandardpackages  
ꢀ175°COperatingTemperature  
ꢀAvalancheRated  
ꢀ
Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Easy to mount  
Space savings  
Highpowerdensity  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
ꢀ
4.5  
Applications  
±200 nA  
μA  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0V  
5
Automotive  
- MotorDrives  
- High Side Switch  
- 12VBattery  
TJ = 150°C  
250 μA  
5.5 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
4.5  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
Primary - Side Switch  
High Current Switching Applications  
ꢀ
ꢀ
DS99654A(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH200N10T  
IXTQ200N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
96  
S
Ciss  
Coss  
Crss  
9400  
1087  
140  
pF  
pF  
pF  
∅P  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
35  
31  
45  
34  
ns  
ns  
ns  
ns  
ResistiveSwitchingTimes  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 50A  
e
RG = 3.3Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
152  
47  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
47  
RthJC  
RthCH  
0.27 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
200  
500  
1.0  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
TO-3P (IXTQ) Outline  
trr  
QRM  
IRM  
76  
205  
5.4  
ns  
nC  
A
IF = 100A, VGS = 0V,-di/dt = 100A/μs  
VR = 50V  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTH200N10T  
IXTQ200N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
20  
5V  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
1
2
3
4
5
6
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
I D = 200A  
I D = 100A  
60  
40  
20  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 100A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
External Lead Current Limit  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH200N10T  
IXTQ200N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
50  
20  
25  
0
0
0
25  
50  
75  
100 125 150 175 200 225 250  
ID - Amperes  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 50V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
= 1MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: T_200N10T(6V)9-30-08-D  
IXTH200N10T  
IXTQ200N10T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
RG = 3.3Ω  
RG = 3.3ꢀ  
VGS = 10V  
VDS = 50V  
VGS = 10V  
VDS = 50V  
TJ = 25ºC  
I D = 50A  
TJ = 125ºC  
I D = 25A  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
42  
40  
38  
36  
34  
32  
30  
28  
75  
220  
200  
180  
160  
140  
120  
100  
80  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
t f  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
70  
65  
60  
55  
50  
45  
40  
VDS = 50V  
VDS = 50V  
I D = 25A  
I D = 50A  
I D = 25A  
I D = 50A  
60  
40  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
38  
37  
36  
35  
34  
33  
32  
31  
30  
80  
75  
70  
65  
60  
55  
50  
45  
40  
200  
180  
160  
140  
120  
100  
80  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
t f  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
TJ = 125ºC  
VDS = 50V  
VDS = 50V  
TJ = 25ºC  
TJ = 25ºC  
I D = 25A  
I D = 50A  
60  
40  
TJ = 125ºC  
20  
0
50  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_200N10T(6V)9-30-08-D  

IXTH200N10T 替代型号

型号 制造商 描述 替代类型 文档
IXTQ200N10T IXYS TrenchMVTM Power MOSFET 类似代替
IXTV200N10T IXYS Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, 类似代替
IXTV200N10TS IXYS Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, 类似代替

IXTH200N10T 相关器件

型号 制造商 描述 价格 文档
IXTH20N50D IXYS Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN 获取价格
IXTH20N50D LITTELFUSE Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN 获取价格
IXTH20N55 IXYS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 获取价格
IXTH20N55MA IXYS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 获取价格
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IXTH20N60 IXYS MegaMOS FET 获取价格
IXTH20N60 LITTELFUSE 高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。 功能与特色: 应用: 优点: 获取价格
IXTH20N60MA ETC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) 获取价格
IXTH20N60MB ETC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) 获取价格
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