IXTH11N95 [IXYS]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
IXTH11N95
型号: IXTH11N95
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

文件: 总8页 (文件大小:699K)
下载:  下载PDF数据表文档文件

IXTH11P45

TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 11A I(D) | TO-218VAR

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23 ETC

IXTH11P45

Transistor,

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0 IXYS

IXTH11P50

Standard Power MOSFET

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47 IXYS

IXTH11P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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31 IXYS

IXTH11P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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73 IXYS

IXTH120P065T

TrenchPTM Power MOSFETs P-Channel Enhancement Mode

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46 IXYS

IXTH12N100

MegaMOS FET

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57 IXYS

IXTH12N100L

Power Field-Effect Transistor,

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1 LITTELFUSE

IXTH12N100L

Power Field-Effect Transistor, 12A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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2 IXYS

IXTH12N120

Power MOSFET, Avalanche Rated High Voltage

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114 IXYS

IXTH12N150

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTH12N45

12 AMPS, 450-500V, 0.4OM/0.5OM

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27 IXYS

IXTH12N45

12 AMPS, 450-500V, 0.4OM/0.5OM

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15 IXYS

IXTH12N45

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 IXYS

IXTH12N45A

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247

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18 ETC