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元器件品牌
IXTA86N20T
[IXYS]
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated; 沟槽栅功率MOSFET N沟道增强型额定雪崩
元器件型号：
IXTA86N20T
生产厂家：
IXYS CORPORATION
描述和应用：
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated
沟槽栅功率MOSFET N沟道增强型额定雪崩
晶体 晶体管 功率场效应晶体管 开关 脉冲 栅 局域网
PDF文件：
总6页 (文件大小：191K)
下载文档：
下载PDF数据表文档文件
型号参数：IXTA86N20T参数
查看货源
IXTA86N20T-TRL
Power Field-Effect Transistor,
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IXYS
IXTA8N50P
PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
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31
IXYS
IXTA8N65X2
Power Field-Effect Transistor,
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0
IXYS
IXTA8N65X2
Power Field-Effect Transistor,
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156
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0
LITTELFUSE
IXTA90N055T
Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
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0
IXYS
IXTA90N055T2
DC to DC Synchronous Converter Design
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17
IXYS
IXTA90N075T2
DC to DC Synchronous Converter Design
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23
IXYS
IXTA90N15T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
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26
IXYS
IXTA96P085T
TrenchPTM Power MOSFETs P-Channel Enhancement Mode
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65
IXYS
IXTA96P085TTRL
MOSFET P-CH 85V 96A TO-263
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156
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0
IXYS
IXTA98N075T
Advance Technical Information TrenchMVTM Power MOSFET
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156
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14
IXYS
IXTA98N075T
Power Field-Effect Transistor, 98A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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156
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0
IXYS
IXTB30N100L
Power MOSFETs with Extended FBSOA
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156
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28
IXYS
IXTB62N50L
Power Field-Effect Transistor, 62A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN
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IXYS
IXTB62N50L
Power Field-Effect Transistor,
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LITTELFUSE
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