IXGR39N60BD1 [IXYS]

Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN;
IXGR39N60BD1
型号: IXGR39N60BD1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

电动机控制 栅 晶体管
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0 LITTELFUSE

IXGR40N60B2

C2-Class High Speed IGBTs (Electrically Isolated Back Surface)

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24 IXYS

IXGR40N60B2D1

C2-Class High Speed IGBTs (Electrically Isolated Back Surface)

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18 IXYS

IXGR40N60BD1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXGR40N60C

HiPerFAST IGBT ISOPLUS247

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44 IXYS

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25 IXYS

IXGR40N60C2D1

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23 IXYS

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0 IXYS

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600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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9 IXYS

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