IXFL60N80P [IXYS]

PolarHV HiPerFET Power MOSFET ISOPLUS264; PolarHV HiPerFET功率MOSFET ISOPLUS264


型号：	IXFL60N80P
厂家：	IXYS CORPORATION
描述：	PolarHV HiPerFET Power MOSFET ISOPLUS264 PolarHV HiPerFET功率MOSFET ISOPLUS264 晶体晶体管功率场效应晶体管开关脉冲局域网
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中文：	中文翻译
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PolarHV^TMHiPerFET

Power MOSFET

IXFL 60N80P

V_DSS= 800 V

I_D25= 40 A

R_DS(on)≤ 150 mΩ

ISOPLUS264^TM

t_rr

≤ 250 ns

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS264 ^TM

(IXFL)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 150° C

800

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

(Isolated Tab)

D = Drain

I_D25

I_DM

T_C=25° C

G = Gate

S = Source

T_C= 25° C, pulse width limited by T_JM

150

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

100

Features

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 2 Ω

V/ns

International standard isolated

package

UL recognized package

T_C=25° C

625

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

V_ISOL

50/60 Hz, RMS

t = 1 min

t = 1 s

2500

3000

I_ISOL≤1 mA

F_C

Mounting force

28..150 / 6.4..30

N/lb

Weight

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

V_GS= 30 V_DC, V_DS= 0

800

3.0

5.0

200

I_DSS

V_DS= V_DSS

V_GS= 0 V

3000

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= I_T, Note 1

150 mΩ

DS99561E(02/06)

IXFL 60N80P

Symbol

g_fs

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

ISOPLUS264 (IXFL) Outline

V_DS= 20 V; I_D= I_T, Note 1

C_iss

C_oss

C_rss

1200

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_T

R_G= 1 Ω (External)

110

Note: Bottomheatsinkmeets

2500VrmsIsolationtotheotherpins.

Q_g(on)

Q_gs

250

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_T

Q_gd

R_thJC

R_thCS

0.20 ° C/W

° C/W

0.13

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Symbol

Test Conditions

I_S

V_GS= 0 V

150

1.5

I_SM

V_SD

t_rr

Repetitive

Ref:IXYSCO0128R0

I_F= I_S, V_GS= 0 V, Note 1

I_F= 25A, -di/dt = 100 A/µs

250

Q_RM

I_RM

V_R= 100V

0.6

6.0

µC

Notes:

1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %

Test Current I_T= 30 A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,727,585

6,534,343

6,583,505

6,710,405B2 6,759,692

6,710,463 6,771,478 B2

IXFL 60N80P

Fig. 1. Output Characteristics

@ 25ºC

Fig. 2. Extended Output Characteristics

@ 25ºC

120

100

V_GS= 10V

= 10V

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 30A Value

vs. Junction Temperature

Fig. 3. Output Characteristics

@ 125ºC

3.2

2.8

2.4

= 10V

= 60A

= 30A

1.6

1.2

0.8

0.4

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= 30A Value

vs. Drain Current

Fig. 6. Maximum Drain Current vs.

Case Temperature

2.8

2.6

2.4

2.2

= 10V

= 125ºC

1.8

1.6

1.4

1.2

= 25ºC

0.8

-50

-25

100

125

150

100

120

T_J- Degrees Centigrade

I_D- Amperes

IXFL 60N80P

Fig. 8. Transconductance

Fig. 7. Input Admittance

130

120

110

100

T_J= 125ºC

25ºC

- 40ºC

= - 40ºC

25ºC

125ºC

4.25 4.5 4.75

5.25 5.5 5.75

6.25 6.5 6.75

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

Fig. 10. Gate Charge

180

160

140

120

100

= 400V

= 30A

= 10mA

= 125ºC

= 25ºC

0.3 0.4

0.5 0.6

0.7 0.8

0.9

1.1 1.2

1.3 1.4

20 40 60 80 100 120 140 160 180 200 220 240 260

Q_G- NanoCoulombs

V_SD- Volts

Fig. 12. Maximum Transient Thermal

Resistance

Fig. 11. Capacitance

100,000

10,000

1,000

100

1.000

0.100

0.010

0.001

f = 1 MHz

iss

oss

rss

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

V_DS- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

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