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元器件品牌
IXBK55N300
[IXYS]
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor; 高电压，高增益BIMOSFETTM单片双极型晶体管MOS
元器件型号：
IXBK55N300
生产厂家：
IXYS CORPORATION
描述和应用：
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
高电压，高增益BIMOSFETTM单片双极型晶体管MOS
晶体 双极型晶体管
PDF文件：
总6页 (文件大小：221K)
下载文档：
下载PDF数据表文档文件
型号参数：IXBK55N300参数
查看货源
IXBK64N250
Insulated Gate Bipolar Transistor,
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156
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0
LITTELFUSE
IXBK64N250
Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Warning
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156
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1
IXYS
IXBK75N170
IGBT 1700V 200A 1040W TO264
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on line
156
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0
IXYS
IXBK75N170A
BiMOSFETTM Monolithic Bipolar MOS Transistor
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: Undefined variable $rtag in
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on line
156
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50
IXYS
IXBL64N250
Insulated Gate Bipolar Transistor, 116A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS, I5PAK-4
Warning
: Undefined variable $rtag in
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156
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0
LITTELFUSE
IXBN42N170A
Insulated Gate Bipolar Transistor, 42A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4
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156
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0
IXYS
IXBN42N170A
Insulated Gate Bipolar Transistor,
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156
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0
LITTELFUSE
IXBN75N170
Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4
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6
IXYS
IXBN75N170A
BIMOSFET Monolithic Bipolar MOS Transistor
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156
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50
IXYS
IXBOD1-06
Breakover Diodes
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156
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24
IXYS
IXBOD1-06
Breakover Diodes
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156
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74
IXYS
IXBOD1-07
Breakover Diodes
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156
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46
IXYS
IXBOD1-07
Breakover Diodes
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156
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9
IXYS
IXBOD1-07
RVS Blocking BOD, 700V V(BO) Max,
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156
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0
IXYS
IXBOD1-07SN
Silicon Surge Protector, 650V V(BO) Max,
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156
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0
IXYS
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