F0900VC520_技术文档

Date:- 10 Oct, 2003

Data Sheet Issue:- 1

WESTCODE

IXYS

An

Company

Provisional Data

Extra Fast Recovery Diode

Type F0900V#520

Development Type No.: FX055VC520

Absolute Maximum Ratings

MAXIMUM

LIMITS

5200

VOLTAGE RATINGS

UNITS

V_RRM

V_RSM

Repetitive peak reverse voltage, (note 1)

V

Non-repetitive peak reverse voltage, (note 1)

5300

MAXIMUM

LIMITS

816

OTHER RATINGS

UNITS

I_F(AV)M

I_F(RMS)

I_f(d.c.)

I_FSM

Maximum average forward current, T_sink=55°C, (note 2)

Maximum average forward current. T_sink=85°C, (note 2)

Maximum average forward. T_sink=85°C, (note 3)

Nominal RMS forward current, T_sink=25°C, (note 2)

D.C. forward current, T_sink=25°C, (note 4)

A

514

312

A

1654

A

1452

A

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

10.45

kA

A²s

°C

I_FSM2

I²t

≤

11.5

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

546×10³

661×10³

-40 to +115

-40 to +150

≤

T_{j op}

Operating temperature range

Storage temperature range

T_stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 115°C T_jinitial.

6) Current (I_F) ratings have been calculated using V_T0and r_T(see page 2).

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 1 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

-

3.20 I_FM=900A

V_FM

Maximum peak forward voltage

V

-

4.40

2.024

1.274

2.084

1.234

I_FM=1800A

V_T0

r_T

Threshold voltage

Slope resistance

Threshold voltage

Slope resistance

-

V

Current range 816A-2448A (Note 2)

Current range 900A-2700A

-

Ω

m

V_T0

r_T

-

V

-

Ω

-

155 di/dt = 1000A/µs

110 di/dt = 1000A/µs, T_j=25°C

200 Rated V_RRM

V_FRM

Maximum forward recovery voltage

Peak reverse current

V

-

I_RRM

mA

-

200 Rated V_RRM, T_j=25°C

-

Q_ra

t_rr

Recovered charge, 50% Chord

Reverse recovery time, 50% Chord

Reverse recovery current

-

2000

1.4

3000

230

3.8

120

-

µC

µs

A

I

_FM=900A, t_p=1000µs, di/dt=2000A/µs,

-

V_r=400V, 50% Chord. (note 3)

I_rm

Q_ra

t_rr

-

Recovered charge, 50% Chord

Reverse recovery time, 50% Chord

Reverse recovery current

-

350

µC

µs

A

I_FM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, 50% Chord.

-

I_rm

-

0.016 Double side cooled

R_thJK

Thermal resistance, junction to heatsink

K/W

-

0.032 Single side cooled

F

Mounting force

Weight

27

-

34

-

kN

g

W_t

1000

Notes:-

1) Unless otherwise indicated T_j=115°C.

2) V_T0and r_Twere used to calculate the current ratings illustrated on page one.

3) Figures 3-7 were compiled using these conditions.

4) For other clamp forces consult factory.

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 2 of 11

October, 2003

WESTCODE ^AnIXYS Company

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Extra Fast Recovery Diode Type F0900V#520

Voltage Grade

52

V_RRM

(V)

5200

V_RSM

(V)

5300

V_Rdc

(V)

2240

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T_jbelow 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of V_Fcharacteristic in Figure 1) are the coefficients of

the expression for the forward characteristic given below:

ln(I_F) + C

⋅ ⋅ ⋅

V_F= A + B I_F+ D I_F

where I_F= instantaneous forward current.

4.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig.(a) below.

µ

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

I.e.

0

t₁

t₂

K Factor =

(iii)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 3 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.

Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated

from:

[

]

⋅ ⋅

T_SINK= T_{J (MAX )}− E k + f R_{th(JK )}

k

Where = 0.2314 (°C/W)/s

E

f

= Area under reverse loss waveform per pulse in joules (W.s.)

= Rated frequency in Hz at the original sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W)

The total dissipation is now given by:

⋅

W_(tot)= W_{(original )}+ E f

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the

charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation of this

snubber is shown below:

V_r

R²= 4

⋅

di

C_S

⋅

dt

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R = Snubber resistance

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 4 of 11

October, 2003

WESTCODE ^AnIXYS Company

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

Extra Fast Recovery Diode Type F0900V#520

−V_o+ V_o+ 4⋅ ⋅ ⋅

ff ²

r W_AV

s

I_AV=

2

⋅ ⋅

ff ²

r

s

V

r

Ω

Where _T0= 2.024V, _T= 1.274m

ff _{= form factor (normally unity for fast diode applications)}

T

∆

W_AV=

R

th

∆T = T_{j(MAX )}−T_K

7.2 Calculation of V_Fusing ABCD Coefficients

The forward characteristic I_FVs V_F, on page 6 is represented in two ways;

(i)

(ii)

the well established V_oand r_stangent used for rating purposes and

a set of constants A, B, C, and D forming the coefficients of the representative equation for V_Fin

terms of I_Fgiven below:

ln(I_F) + C

⋅ ⋅ ⋅

V_F= A + B I_F+ D I_F

The constants, derived by curve fitting software, are given in this report for hot characteristics. The

resulting values for V_Fagree with the true device characteristic over a current range, which is limited to

that plotted.

25°C Coefficients

-0.70095013

115°C Coefficients

0.263206271

0.133148

A

B

C

D

0.5516109

7.638×10^-4

3.5077×10^-4

5.18755×10^-4

0.05197278

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings

shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 5 of 11

October, 2003

WESTCODE ^AnIXYS Company

Curves

Extra Fast Recovery Diode Type F0900V#520

Figure 1 – Forward characteristics of Limit device

Figure 2 – Maximum forward recovery voltage

10000

1,000

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

115

25

115

25

1000

100

10

1

2

3

4

5

6

7

8

10

100

1000

10000

Maximum instantaneous forward voltage - V_FM(V)

Rate of rise of forward current - di/dt (A/

)

Figure 3 - Recovered charge, Q_rr

Figure 4 - Recovered charge, Q_ra(50% chord)

10000

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

T_j= 115

2000A

900A

500A

2000A

900A

500A

(

)

(

)

1000

100

10

100

1000

10000

10

100

1000

10000

Commutation rate - di/dt (A/

)

Commutation rate - di/dt (A/

)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 6 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Figure 5 - Maximum reverse current, I_rm

Figure 6 - Maximum recovery time, t_rr(50% chord)

10000

100

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

T_j= 115

900A

500A

2000A

(

)

1000

10

2000A

900A

500A

100

1

10

100

1000

10000

10

100

1000

10000

Commutation rate - di/dt (A/

)

Commutation rate - di/dt (A/

)

Figure 7 – Reverse recovery energy per pulse

Figure 8 - Sine wave energy per pulse

10000

1.00E+02

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

T_j= 115

V_R= 400V

No Snubber

1.00E+01

2000A

900A

500A

1000

2000A

900A

1.00E+00

500A

1.00E-01

100

1.00E-05

1.00E-04

1.00E-03

1.00E-02

10

100

1000

10000

Pulse width (s)

Commutation rate - di/dt (A/

)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 7 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Figure 9 - Sine wave frequency vs. pulse width

Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

T_K= 85

T_K= 55

100% Duty Cycle

500A

100% Duty Cycle

1.00E+04

500A

900A

1.00E+03

2000A

1.00E+03

2000A

1.00E+02

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 11 - Square wave energy per pulse

Figure 12 - Square wave energy per pulse

1.00E+02

1.00E+03

F0900V#520

AD Issue 1

di/dt =100A/

T_j= 115

AD Issue 1

di/dt =500A/

T_j= 115

2000A

1.00E+02

1.00E+01

1.00E+00

1.00E-01

900A

500A

1.00E+01

2000A

1.00E+00

900A

500A

1.00E-01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 8 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Figure 13 - Square wave frequency vs. pulse width

Figure 14 - Square wave frequency vs. pulse width

1.00E+05

F0900V#520

AD Issue 1

di/dt =100A/

T_K= 85

AD Issue 1

di/dt =100A/

T_K=55

500A

100% Duty Cycle

1.00E+04

500A

100% Duty Cycle

900A

1.00E+03

2000A

1.00E+03

2000A

1.00E+02

1.00E+01

1.00E-05

1.00E+01

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width

Figure 16 - Square wave frequency vs. pulse width

1.00E+05

F0900V#520

AD Issue 1

di/dt =500A/

T_K= 85

AD Issue 1

di/dt =500A/

T_K= 55

100% Duty Cycle

1.00E+04

500A

100% Duty Cycle

500A

900A

1.00E+03

900A

2000A

1.00E+02

2000A

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 9 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Figure 17 – Safe operating area

Figure 17 – Transient thermal impedance

3000

0.1

F0900V#520

AD Issue 1

F0900V#520

AD Issue 1

T_j= 115

SSC 0.032K/W

2500

2000

1500

1000

500

DSC 0.016K/W

0.01

0.001

0

0.0001

0

1000

2000

3000

4000

5000

0.0001

0.001

0.01

0.1

1

10

100

Reverse recovery voltage, V_r(V)

Time (s)

Figure 19 – Maximum surge and I²t ratings

100000

1.00E+07

1.00E+06

1.00E+05

F0900V#520

AD Issue 1

I²t: V_RRM10V

≤

T_j(initial) = 115

I²t: V_R=60% V_RRM

10000

≤

I_FSM: V_RRM10V

I_FSM: V_R=60% V_RRM

1000

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 10 of 11

October, 2003

WESTCODE ^AnIXYS Company

Extra Fast Recovery Diode Type F0900V#520

Outline Drawing & Ordering Information

Outline option VC

Outline option VF

ORDERING INFORMATION

(Please quote 10 digit code as below)

F0900

0

Outline code

VC=33.1mm height,

VF=26.5mm height

Voltage code

V_DRM/100

52

Fixed

Type Code

Fixed code

Order code: F0900VC520 – 5200V V_RRM, 33.1mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

D-68623 Lampertheim

Tel: +49 6206 503-0

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire SN15 1GE.

Tel: +44 (0)1249 444524

WESTCODE

Fax: +44 (0)1249 659448

An IXYS Company

E-mail: WSL.sales@westcode,com

IXYS Corporation

3540 Bassett Street

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

E-mail: WSI.sales@westcode.com

www.westcode.com

www.ixys.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Provisional Data Sheet. Type F0900V#520 Issue 1

Page 11 of 11

October, 2003


型号：	F0900VC520
厂家：	IXYS CORPORATION
描述：	Rectifier Diode, 1 Phase, 1 Element, 816A, 5200V V(RRM), Silicon, 快速恢复二极管超快恢复二极管
文件：	总11页 (文件大小：290K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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