DPG20C400PN [IXYS]

HiPerFREDÂ²; HiPerFREDÂ²


型号：	DPG20C400PN
厂家：	IXYS CORPORATION
描述：	HiPerFREDÂ² HiPerFREDÂ² 整流二极管局域网软恢复二极管快速软恢复二极管
文件：	总4页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DPG 20 C 400 PB

V_RRM

I_FAV= 2x

t_rr

400 V

HiPerFRED²

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Common Cathode

45 ns

Part number

DPG 20 C 400 PB

Backside: cathode

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Housing: TO-220

●rIndustry standard outline

●rEpoxy meets UL 94V-0

●rRoHS compliant

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

- Power dissipation within the diode

- Turn-on loss in the commutating switch

R a t i n g s

Conditions

Symbol

V_RRM

I_R

Definition

min. typ. max. Unit

T_VJ

400

max. repetitive reverse voltage

reverse current

25°C

µA

V_R= 400V

T_VJ

T_VJ= 150°C

T_VJ25°C

0.15 mA

forward voltage

V_F

I_F

10A

20A

10A

20A

1.32

1.51

1.03

1.24

_VJ= 150°C

I_FAV

V_F0

r_F

T_C= 145°C

T_VJ= 175°C

average forward current

threshold voltage

rectangular

d = 0.5

0.77

for power loss calculation only

slope resistance

19.8 mΩ

R_thJC

T_VJ

P_tot

I_FSM

I_RM

2.30 K/W

thermal resistance junction to case

virtual junction temperature

total power dissipation

-55

175

°C

T_C

25°C

45°C

max. forward surge current

max. reverse recovery current

T_VJ

150

t = 10 ms (50 Hz), sine

T_VJ= 25°C

T_VJ= 125°C

T_VJ= 25°C

T_VJ= 125°C

I_F= 10 A; V_R= 270V

-di_F/dt = 200 A/µs

reverse recovery time

junction capacitance

t_rr

C_J

V_R= 200 V; f = 1 MHz

T_VJ= 25°C

IXYS reserves the right to change limits, conditions and dimensions.

20100125a

Data according to IEC 60747and per diode unless otherwise specified

DPG 20 C 400 PB

Ratings

Symbol

I_RMS

Definition

Conditions

min. typ. max. Unit

per terminal

K/W

°C

RMS current

R_thCH

0.50

thermal resistance case to heatsink

storage temperature

T_stg

-55

150

Weight

mounting torque

M_D

0.4

0.6 Nm

mounting force with clip

I_RMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2).

In case of (1) and a common cathode/anode configuration with a non-isolated backside,

the current capability can be increasedby connecting the backside.

Product Marking

Part number

D = Diode

P = HiPerFRED

G = extreme fast

Marking on product

abcdef

YYWW

20 = Current Rating [A]

C = Common Cathode

400 = Reverse Voltage [V]

Logo

DateCode

PB = TO-220AB (3)

Assembly Code

XXXXXX

Ordering

Part Name

Marking on Product

DPG20C400PB

Delivering Mode

Tube

Base Qty Code Key

DPG 20 C 400 PB

506647

Standard

Similar Part

DPG20C400PN

DPG20C400PC

Package

Voltage Class

TO-220ABFP (3)

TO-263AB (D2Pak)

400

IXYS reserves the right to change limits, conditions and dimensions.

20100125a

Data according to IEC 60747and per diode unless otherwise specified

DPG 20 C 400 PB

Outlines

TO-220

Dim.

Millimeter

Min.

Inches

Max. Min.

Max.

4.32

1.14

2.29

4.82

1.39

2.79

0.170 0.190

0.045 0.055

0.090

0.110

0.64

1.15

1.01

1.65

0.025 0.040

0.045 0.065

ØP

0.35

14.73 16.00

0.56

0.014 0.022

0.580 0.630

9.91 10.66

0.390 0.420

2.54

5.85

BSC

6.85

0.100

0.230 0.270

BSC

3x b2

3x b

12.70 13.97

2.79

0.500 0.550

0.110 0.230

5.84

ØP

3.54

2.54

4.08

3.18

0.139 0.161

0.100 0.125

2x e

IXYS reserves the right to change limits, conditions and dimensions.

20100125a

Data according to IEC 60747and per diode unless otherwise specified

DPG 20 C 400 PB

0.4

0.3

0.2

0.1

0.0

20 A

T_VJ= 125°C

V_R= 270 V

T_VJ= 125°C

V_R= 270 V

10 A

5 A

10 A

5 A

T_VJ

25°C

I_F

Q_rr

I_RM

125°C

[µC]

[A]

0.0

0.4

0.8

1.2

1.6

2.0

100 200 300 400 500

-di_F/dt [A/µs]

V_F[V]

-di_F/dt [A/µs]

Fig. 1 Forward current I_Fversus

forward voltage drop V_F

Fig. 2 Typ. reverse recovery charge

Q_rrversus -di_F/dt

Fig. 3 Typ. reverse recovery current

I_RMversus -di_F/dt

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

100

350

T_VJ= 125°C

V_R= 270 V

300

250

200

150

100

I_F= 20 A

T_VJ= 125°C

I_F= 10 A

V_FR

t_rr

[ns]

t_fr

K_f

[V]

V_R= 270 V

10 A

5 A

I_RM

V_FR

[ns]

Q_rr

t_fr

120

160

100 200 300 400 500

T_VJ[°C]

-di_F/dt [A/µs]

Fig. 4 Dynamic parameters

Q_rr, I_RMversus T_VJ

Fig. 5 Typ. reverse recovery time

t_rrversus -di_F/dt

Fig. 6 Typ. forward recovery voltage

V_FRand t_frversus di_F/dt

T_VJ= 125°C

V_R= 270 V

E_rec

Z_thJC

[K/W]

I_F= 5 A

[µJ]

10 A

20 A

100 200 300 400 500

100

t [ms]

Fig. 8 Transient thermal resistance junction to case

1000

10000

-di_F/dt [A/µs]

Fig. 7 Typ. recovery energy

_recversus -di_F/dt

IXYS reserves the right to change limits, conditions and dimensions.

20100125a

Data according to IEC 60747and per diode unless otherwise specified

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