DFE10I600PM [IXYS]
Fast Recovery Diode Low Loss and Soft Recovery Single Diode; 快恢复二极管低损耗和软恢复二极管单
| 型号： | DFE10I600PM |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Diode Low Loss and Soft Recovery Single Diode |
| 文件： | 总2页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DFE 10 I 600PM
advanced
VRRM
IFAV
trr
=
=
=
600 V
10 A
FRED
Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
35 ns
(Marking on product)
Part number
3
1
DFE 10 I 600PM
Backside: isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Llow leakage current
● Very short recovery time
● Improved thermal behaviour
● Low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220ACFP
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
R a t i n g s
Symbol
VRRM
IR
Definition
Conditions
min.
typ.
max.
Unit
max. repetitive reverse voltage
=
=
25 °C
25 °C
600
V
TVJ
reverse current
V = 600
20
V
V
TVJ
TVJ
TVJ
µA
R
V = 600
= 125 °C
25 °C
1.5
mA
R
forward voltage
IF
IF
=
=
10 A
=
1.50
1.80
V
V
VF
20 A
IF
IF
=
=
10 A
20 A
TVJ = 150 °C
1.30
1.70
V
V
average forward current
threshold voltage
IFAV
rectangular, d = 0.5
TC = 100 °C
TVJ = 150 °C
10
A
V
VF0
rF
0.98
28.7
for power loss calculation only
slope resistance
m
Ω
thermal resistance junction to case
virtual junction temperature
total power dissipation
RthJC
TVJ
4.20
150
30
K/W
°C
W
-55
Ptot
=
=
=
25 °C
45 °C
25 °C
TC
max. forward surge current
max. reverse recovery current
IFSM
IRM
tp = 10 ms (50 Hz), sine
TVJ
100
A
A
A
TVJ
TVJ
IF = 10 A;
= 125 °C
25 °C
= 125 °C
4
-diF /dt = 100 A/µs
VR = 300 V
t rr
reverse recovery time
=
35
ns
ns
TVJ
TVJ
TVJ
120
junction capacitance
CJ
VR = 300 V;
=
=
°C
tbd
pF
mJ
A
f = 1 MHz
AS = tbd A; L = 100 µH
V = 1.5·V typ.;
25
non-repetitive avalanche energy
repetitive avalanche current
EAS
IAR
I
TVJ
25 °C
tbd
tbd
f = 10 kHz
A
R
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
DFE 10 I 600PM
advanced
Ratings
Symbol
IRMS
Definition
Conditions
min.
typ.
max.
Unit
A
RMS current
per pin*
35
thermal resistance case to heatsink
RthCH
0.50
K/W
mounting torque
MD
FC
0.4
20
0.6
60
Nm
N
mounting force with clip
storage temperature
Tstg
-55
150
°C
g
Weight
2
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines
TO-220ACFP
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
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