CMA30E1600PB [IXYS]
Single Thyristor; 单晶闸管
| 型号： | CMA30E1600PB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Single Thyristor |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMA30E1600PB
VRRM
ITAV
VT
=
=
=
1600V
30A
Thyristor
1.42V
Single Thyristor
Part number
CMA30E1600PB
Backside: anode
2
1
3
TO-220
Features / Advantages:
Applications:
Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Power converter
● AC power control
● Lighting and temperature control
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130118a
© 2013 IXYS all rights reserved
CMA30E1600PB
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
1700
1600
10
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D = 1600 V
µA
mA
V
reverse current, drain current
VR/D = 1600 V
2
forward voltage drop
VT
30
1.42
1.80
1.42
1.92
30
IT =
A
V
IT = 60 A
IT = 30 A
IT = 60 A
TC = 115°C
180° sine
TVJ
=
°C
V
125
V
average forward current
RMS forward current
TVJ = 150°C
TVJ = 150°C
A
ITAV
IT(RMS)
VT0
47
A
0.90
V
threshold voltage
for power loss calculation only
slope resistance
rT
17 mΩ
0.5 K/W
K/W
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.50
TC = 25°C
TVJ = 45°C
VR = 0 V
250
260
280
220
240
W
A
A
A
A
total power dissipation
max. forward surge current
ITSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V f = 1 MHz
tP = 30 µs
TVJ = 150°C
VR = 0 V
value for fusing
I²t
TVJ = 45°C
VR = 0 V
340 A²s
325 A²s
240 A²s
240 A²s
pF
TVJ = 150°C
VR = 0 V
junction capacitance
CJ
TVJ = 25°C
TC = 150°C
13
PGM
10
5
W
W
W
max. gate power dissipation
tP = 300 µs
PGAV
0.5
average gate power dissipation
critical rate of rise of current
(di/dt)cr
TVJ = 125°C; f = 50 Hz
tP = 200µs;diG/dt = 0.2 A/µs;
IG = 0.2A; VD = ⅔ VDRM
VD = ⅔ VDRM
repetitive, IT = 90 A
150 A/µs
non-repet., IT = 30 A
TVJ = 125°C
500 A/µs
500 V/µs
critical rate of rise of voltage
gate trigger voltage
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 150°C
1.3
1.6
V
V
gate trigger current
IGT
VD = 6 V
28 mA
50 mA
gate non-trigger voltage
gate non-trigger current
latching current
VGD
IGD
IL
VD = ⅔ VDRM
tp = 10 µs
0.2
1
V
mA
TVJ = 25°C
90 mA
IG
=
0.2A; diG/dt = 0.2 A/µs
holding current
IH
VD = 6 V RGK = ∞
TVJ = 25°C
TVJ = 25°C
60 mA
gate controlled delay time
tgd
VD = ½ V
2
µs
µs
DRM
IG
VR = 100 V; IT = 30 A; VD = ⅔ VDRM TVJ = 150°C
di/dt = 10 A/µs; dv/dt = 20V/µs; µs
=
0.5A; diG/dt = 0.5 A/µs
turn-off time
tq
150
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130118a
© 2013 IXYS all rights reserved
CMA30E1600PB
Ratings
Package TO-220
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
35
150
150
Unit
A
°C
°C
g
RMS current
Tstg
-55
-40
storage temperature
virtual junction temperature
TVJ
Weight
2
MD
0.4
20
0.6 Nm
60
mounting torque
F
N
mounting force with clip
C
Product Marking
Part number
C = Thyristor (SCR)
M = Thyristor
A = (up to 1800V)
30 = Current Rating [A]
E = Single Thyristor
1600 = Reverse Voltage [V]
PB = TO-220AB (3)
Part Number
Logo
abcdef
YYWWZ
Date Code
Lot #
XXXXXX
Assembly Line
Ordering
Standard
Part Number
Marking on Product
CMA30E1600PB
Delivery Mode
Tube
Quantity Code No.
CMA30E1600PB
50
503348
Similar Part
CMA30E1600PN
CLA30E1200PB
CS22-12io1M
Package
TO-220ABFP (3)
TO-220AB (3)
Voltage class
1600
1200
1200
1200
1200
800
TO-220ABFP (3)
TO-263AB (D2Pak) (2)
TO-247AD (3)
CLA30E1200PC
CLA30E1200HB
CS22-08io1M
TO-220ABFP (3)
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Thyristor
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
0.9
14
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130118a
© 2013 IXYS all rights reserved
CMA30E1600PB
Outlines TO-220
Dim.
Millimeter
Min.
Inches
Max. Min.
Max.
A
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170 0.190
0.045 0.055
A1
E
0.090
0.110
b
b2
0.64
1.15
1.01
1.65
0.025 0.040
0.045 0.065
ØP
4
C
D
0.35
14.73 16.00
0.56
0.014 0.022
0.580 0.630
1
2
3
E
9.91 10.66
0.390 0.420
e
H1
2.54
5.85
BSC
6.85
0.100
0.230 0.270
BSC
3x b2
3x b
L
L1
12.70 13.97
2.79
0.500 0.550
0.110 0.230
5.84
ØP
Q
3.54
2.54
4.08
3.18
0.139 0.161
0.100 0.125
C
2x e
A2
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130118a
© 2013 IXYS all rights reserved
CMA30E1600PB
Thyristor
60
250
200
150
100
1000
VR = 0 V
50 Hz, 80% VRRM
50
TVJ = 45°C
40
IT
I2t
ITSM
[A]
TVJ = 125°C
30
[A]
100
TVJ = 45°C
[A2s]
20
TVJ
=
125°C
150°C
TVJ = 125°C
10
0
TVJ = 25°C
1.0 1.5
10
0.5
2.0
0.01
0.1
1
1
2
3
4
5 6 7 8 910
VT [V]
t [s]
t [ms]
Fig. 3 I2t versus time (1-10 s)
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
IGD: TVJ = 125°C
4
3
2
1
0
102
101
100
10-1
40
30
20
10
0
TVJ = 125°C
dc =
1
0.5
VG
[V]
tgd
ITAVM
[A]
0.4
0.33
0.17
0.08
[μs]
lim.
typ.
IGD: TVJ = 25°C
-2
0
25
50
IG [mA]
75
10-1
100
101
0
40
80
120
160
IG [A]
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
0.6
RthHA
dc =
1
0.5
60
40
0.6
0.8
1.0
0.4
0.4
2.0
0.33
0.17
0.08
ZthJC
4.0
8.0
P(AV)
i
Rthi (K/W)
ti (s)
0.01
0.0001
0.02
0.2
[K/W]
[W]
1
2
3
4
5
0.08
0.06
0.2
0.05
0.11
0.2
20
0.11
0
0.0
0
10
20
30
40 0
50
100
150
1
10
100
t [ms]
1000
10000
IF(AV) [A]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130118a
© 2013 IXYS all rights reserved
相关型号：
CMA30P1600FC
Silicon Controlled Rectifier, 47A I(T)RMS, 30000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, PLASTIC, I4-PAC, 5 PIN
LITTELFUSE
CMA30P1600FC
Silicon Controlled Rectifier, 47A I(T)RMS, 30000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, PLASTIC, I4-PAC, 5 PIN
IXYS
CMA3DC12VA
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
CMA3DC12VC
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
CMA3DC24VA
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
CMA3DC24VC
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
CMA3DC6VA
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
CMA3DC6VC
Kinds of single relays, power relays, Autimotive relays lays. Pc-board relays, plug-in relays, PCB relays, miniature relays
ETC
©2020 ICPDF网 联系我们和版权申明