PM25LQ512B-SCE [ISSI]
Flash, 64KX8, PDSO8, SOIC-8;型号: | PM25LQ512B-SCE |
厂家: | INTEGRATED SILICON SOLUTION, INC |
描述: | Flash, 64KX8, PDSO8, SOIC-8 时钟 光电二极管 内存集成电路 |
文件: | 总70页 (文件大小:838K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Pm25LQ040B
Pm25LQ020B
Pm25LQ010B
Pm25LQ512B
4/2M/1M/512KBIT
3V QUAD SERIAL FLASH MEMORY WITH
MULTI-I/O SPI
DATA SHEET
Pm25LQ040B/020B/010B/512B
4M/2M/1M/512KBIT
3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI
FEATURES
Industry Standard Serial Interface
Low Power with Wide Temp. Ranges
- Single 2.3V to 3.6V Voltage Supply
- 10 mA Active Read Current
- 8 µA Standby Current
- Deep Power Down
- Pm25LQ040B: 4Mbit/512Kbyte
- Pm25LQ020B: 2Mbit/256Kbyte
- Pm25LQ010B: 1Mbit/128Kbyte
- Pm25LQ512B: 512Kbit/64Kbyte
- 256-bytes per Programmable Page Standard
- Standard SPI/Dual/Quad Multi-I/O SPI
- Supports Serial Flash Discoverable Parameters
(SFDP)
- Temp Range:
-40°C to +85°C
Advanced Security Protection
- Software and Hardware Write Protection
- 4x256-Byte dedicated security area with
user-lockable bits, (OTP) One Time
Programmable Memory
High Performance Serial Flash (SPI)
- 104 MHz SPI/Dual/Quad Multi-I/O SPI
- 416 MHz equivalent Quad SPI
- 52MB/S Continuous Data Throughput
- Supports SPI Modes 0 and 3
- More than 100,000 erase/program cycles
- More than 20-year data retention
- 128 bit Unique ID for each device
Industry Standard Pin-out & Pb-Free Packages1
- S = 8-pin SOIC 150mil
- D = 8-pin TSSOP
Efficient Read and Program modes
Note1: Pm25LQ040B (not available in D)
- Low Instruction Overhead Operations
- Continuous data read with Byte Wrap around
- Allows XIP operations (execute in place)
- Outperforms X16 Parallel Flash
Flexible & Cost Efficient Memory Architecture
- Uniform 4 Kbyte Sectors or 32/64 Kbyte Blocks
- Flexible 4, 32, 64 Kbytes, or Chip Erase
- Standard Page Program 1 to 256 bytes
- Program/Erase Suspend and Resume
GENERAL DESCRIPTION
The Pm25LQ040B/020B/010B/512B (4M/2M/1M/512Kbit) Serial Flash memory offers a storage solution with flexibility
and performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” is for systems that have
limited space, pins, and power. The device is accessed through a 4-wire SPI Interface consisting of a Serial Data
Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which also serve as multi-
function I/O pins in Dual and Quad modes (see pin descriptions). The Pm25xQ series of Flash is ideal for code
shadowing to RAM, execute in place (XIP) operations, and storing non-volatile data.
The memory array is organized into programmable pages of 256-bytes each. The device supports page program
mode where 1 to 256 bytes of data can be programmed into the memory with one command. Pages can be erased in
groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sectors and blocks
allow greater flexibility for a variety of applications requiring solid data retention.
The device supports the standard Serial Peripheral Interface (SPI), Dual/Quad output (SPI), and Dual/Quad I/O (SPI).
Clock frequencies of up to 104MHz for all read modes allow for equivalent clock rates of up to 416MHz (104MHz x 4)
which equates to 52Mbytes/S of throughput. These transfer rates can outperform 16-bit Parallel Flash memories
allowing for efficient memory access for a XIP (execute in place) operation. The device is manufactured using
industry leading non-volatile memory technology and offered in industry standard lead-free packages. See Ordering
Information for the density and package combinations available.
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Pm25LQ040B/020B/010B/512B
TABLE OF CONTENTS
FEATURES..........................................................................................................................................................2
GENERAL DESCRIPTION ..................................................................................................................................2
TABLE OF CONTENTS.......................................................................................................................................3
1. PIN CONFIGURATION ................................................................................................................................5
2. PIN DESCRIPTIONS ...................................................................................................................................6
3. BLOCK DIAGRAM .......................................................................................................................................7
4. SPI MODES DESCRIPTION........................................................................................................................8
5. SYSTEM CONFIGURATION .....................................................................................................................10
5.1 BLOCK/SECTOR ADDRESSES ..........................................................................................................10
6. REGISTERS...............................................................................................................................................12
6.1. STATUS REGISTER ...........................................................................................................................12
6.2. FUNCTION REGISTER.......................................................................................................................15
7. PROTECTION MODE................................................................................................................................16
7.1 HARDWARE WRITE PROTECTION....................................................................................................16
7.2 SOFTWARE WRITE PROTECTION ....................................................................................................16
8. DEVICE OPERATION................................................................................................................................17
8.1 READ DATA OPERATION (RD, 03h) ..................................................................................................18
8.2 FAST READ DATA OPERATION (FR, 0Bh)........................................................................................20
8.3 HOLD OPERATION..............................................................................................................................21
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) ...........................................................................21
8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) ..................................................................24
8.6 FAST READ QUAD OUTPUT (FRQO, 6Bh) ........................................................................................26
8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) ..........................................................................28
8.8 PAGE PROGRAM OPERATION (PP, 02h)..........................................................................................30
8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) ........................................................31
8.10 ERASE OPERATION .........................................................................................................................32
8.11 SECTOR ERASE OPERATION (SER, D7h/20h) ...............................................................................32
8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) ............................................................33
8.13 CHIP ERASE OPERATION (CER, C7h/60h) .....................................................................................34
8.14 WRITE ENABLE OPERATION (WREN, 06h) ....................................................................................35
8.15 WRITE DISABLE OPERATION (WRDI, 04h).....................................................................................35
8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) ...................................................................36
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h).................................................................36
8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h)...............................................................37
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h).............................................................37
8.20 PROGRAM/ERASE SUSPEND & RESUME......................................................................................38
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8.21 DEEP POWER DOWN (DP, B9h) ......................................................................................................40
8.22 RELEASE DEEP POWER DOWN (RDPD, ABh)...............................................................................41
8.23 READ PRODUCT IDENTIFICATION (RDID, ABh) ............................................................................42
8.24 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh)...........................44
8.25 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) ........................45
8.26 READ UNIQUE ID NUMBER (RDUID, 4Bh) ......................................................................................46
8.27 READ SFDP OPERATION (RDSFDP, 5Ah) ......................................................................................47
8.28 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h) ............................48
8.29 SECURITY INFORMATION ROW (OTP AREA)................................................................................49
8.30 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) .............................................................49
8.31 INFORMATION ROW READ OPERATION (IRRD, 68h) ...................................................................51
8.32 SECTOR LOCK/UNLOCK FUNCTIONS............................................................................................52
9. ELECTRICAL CHARACTERISTICS..........................................................................................................54
9.1 ABSOLUTE MAXIMUM RATINGS (1) ...................................................................................................54
9.2 OPERATING RANGE...........................................................................................................................54
9.3 DC CHARACTERISTICS......................................................................................................................54
9.4 AC MEASUREMENT CONDITIONS ....................................................................................................55
9.5 AC CHARACTERISTICS......................................................................................................................56
9.6 SERIAL INPUT/OUTPUT TIMING........................................................................................................57
9.7 POWER-UP AND POWER-DOWN ......................................................................................................58
9.8 PROGRAM/ERASE PERFORMANCE.................................................................................................59
9.9 RELIABILITY CHARACTERISTICS .....................................................................................................59
10. PACKAGE TYPE INFORMATION .............................................................................................................60
10.1 8-Pin JEDEC 150mil Broad Small Outline Integrated Circuit (SOIC) Package (S)............................60
10.2 8-Pin TSSOP Package (D) .................................................................................................................61
11. ORDERING INFORMATION......................................................................................................................62
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1. PIN CONFIGURATION
CE#
1
Vcc
8
7
SO (IO1)
2
HOLD# (IO3)
SCK
WP# (IO2)
GND
3
4
6
5
SI (IO0)
8-pin SOIC 150mil (Package: S)
8-pin TSSOP (Package: D)
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2. PIN DESCRIPTIONS
SYMBOL
TYPE
DESCRIPTION
Chip Enable: The Chip Enable (CE#) pin enables and disables the devices
operation. When CE# is high the device is deselected and output pins are in a high
impedance state. When deselected the devices non-critical internal circuitry power
down to allow minimal levels of power consumption while in a standby state.
When CE# is pulled low the device will be selected and brought out of standby
mode. The device is considered active and instructions can be written to, data read,
and written to the device. After power-up, CE# must transition from high to low
before a new instruction will be accepted.
CE#
INPUT
Keeping CE# in a high state deselects the device and switches it into its low power
state. Data will not be accepted when CE# is high.
Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1):
This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI
instructions use the unidirectional SI (Serial Input) pin to write instructions,
addresses, or data to the device on the rising edge of the Serial Clock (SCK).
Standard SPI also uses the unidirectional SO (Serial Output) to read data or status
from the device on the falling edge of the serial clock (SCK).
SI (IO0),
SO (IO1)
INPUT/OUTPUT
In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write
instructions, addresses or data to the device on the rising edge of the Serial Clock
(SCK) and read data or status from the device on the falling edge of SCK. Quad SPI
instructions use the WP# and HOLD# pins as IO2 and IO3 respectively.
Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from
being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the
WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are
write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the
Status Register is not write-protected regardless of WP# state.
WP# (IO2)
INPUT/OUTPUT
When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available
since this pin is used for IO2.
Hold/Serial Data IO (IO3): Pauses serial communication by the master device
without resetting the serial sequence. When the QE bit of Status Register is set to
“1”, HOLD# pin is not available since it becomes IO3.
The HOLD# pin allows the device to be paused while it is selected. The HOLD# pin
HOLD# (IO3)
INPUT/OUTPUT is active low. When HOLD# is in a low state, and CE# is low, the SO pin will be at
high impedance.
Device operation can resume when HOLD# pin is brought to a high state. When the
QE bit of Status Register is set for Quad I/O, the HOLD# pin function is not available
and becomes IO3 for Multi-I/O SPI mode.
Serial Data Clock: Synchronized Clock for input and output timing operations.
SCK
Vcc
INPUT
Power: Device Core Power Supply
POWER
Ground: Connect to ground when referenced to Vcc
GND
NC
GROUND
NC: Pins labeled “NC” stand for “No Connect” and should be left uncommitted.
Unused
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3. BLOCK DIAGRAM
Control Logic
High Voltage Generator
Status
Register
I/O Buffers and
Data Latches
256 Bytes
Page Buffer
CE#
SCK
WP#
(IO2)
Y-Decoder
SI
(IO0)
SO
(IO1)
HOLD#
(IO3)
Memory Array
Address Latch &
Counter
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4. SPI MODES DESCRIPTION
Multiple devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e. microcontroller, as
shown in Figure 4.1 the devices support either of two SPI modes:
Mode 0 (0, 0)
Mode 3 (1, 1)
The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the
serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer
to Figure 4.2 for SPI mode. In SPI mode, the input data is latched on the rising edge of Serial Clock (SCK), and
the output data is available from the falling edge of SCK.
Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices)
SDO
SDI
SPI interface with
(0,0) or (1,1)
SCK
SCK SO SI
SCK SO SI
SCK SO SI
SPI Master
(i.e. Microcontroller)
SPI
SPI
SPI
Memory
Device
Memory
Device
Memory
Device
CS3
CS2
CS1
CE#
CE#
CE#
HOLD#
WP#
WP# HOLD#
WP# HOLD#
Notes:
1. The Write Protect (WP#) and Hold (HOLD#) signals should be driven high or low as necessary.
2. SI and SO pins become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively
during Multi-IO mode.
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Figure 4.2 SPI Mode Support
SCK
Mode 0 (0,0)
SCK
Mode 3 (1,1)
MSB
SI
Input
mode
SO
MSB
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5. SYSTEM CONFIGURATION
The device is designed to interface directly with the synchronous Serial Peripheral Interface (SPI)
microcontrollers or any SPI interface-equipped system controllers.
The memory array of Pm25LQ512B is divided into uniform 4 Kbyte sectors or uniform 32 Kbyte blocks (a block
consists of eight adjacent sectors). The memory array of Pm25LQ040/020/010B is divided into uniform 4 Kbyte
sectors or uniform 32/64 Kbyte blocks (a block consists of eight/sixteen adjacent sectors respectively).
Table 5.1 and Table 5.2 illustrate the memory map of the device. The Status Register controls how the memory
is protected.
5.1 BLOCK/SECTOR ADDRESSES
Table 5.1 Block/Sector Addresses of Pm25LQ512B
Memory
Density
Block No.
(32Kbyte)
Sector Size
(Kbyte)
Sector No.
Address Range
Sector 0
Sector 1
:
4
4
:
000000h - 000FFFh
001000h - 001FFFh
:
Block 0
Block 1
Sector 7
Sector 8
Sector 9
:
4
4
4
:
007000h - 007FFFh
008000h - 008FFFh
009000h - 009FFFh
:
512Kb
Sector 15
4
00F000h - 00FFFFh
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Table 5.2 Block/Sector Addresses of Pm25LQ010/020/040B
Block No.
(64Kbyte)
Block No.
(32Kbyte)
Sector Size
(Kbyte)
Memory Density
Sector No.
Address Range
Block 0
Sector 0
4
:
000000h - 000FFFh
:
:
Block 0
Block 1
Block 2
Block 3
Block 4
Block 5
Block 6
Block 7
:
:
:
Block 1
Block 2
Block 3
Block 4
Block 5
Block 6
Block 7
Block 8
Block 9
Block 10
Block 11
Block 12
Block 13
Block 14
Block 15
Sector 15
4
4
:
00F000h - 00FFFFh
1 Mb
Sector 16
010000h - 010FFFh
:
:
:
:
:
Sector 31
4
4
:
01F000h - 01FFFFh
2 Mb
Sector 32
020000h - 020FFFh
:
:
:
:
:
Sector 47
4
4
:
02F000h - 02FFFFh
Sector 48
030000h - 030FFFh
:
:
:
:
:
Sector 63
4
4
:
03F000h - 03FFFFh
4 Mb
Sector 64
040000h - 040FFFh
:
:
:
:
:
Sector 79
4
4
:
04F000h - 04FFFFh
Sector 80
050000h - 050FFFh
:
:
:
:
:
Sector 95
4
4
:
05F000h - 05FFFFh
Sector 96
060000h - 060FFFh
:
:
:
:
:
Sector 111
4
4
:
06F000h - 06FFFFh
Sector 112
070000h - 070FFFh
:
:
:
:
:
Sector 127
4
07F000h - 07FFFFh
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6. REGISTERS
The device has two sets of Registers: Status, Function.
6.1. STATUS REGISTER
Status Register Format and Status Register Bit Definitions are described in Tables 6.1 & 6.2.
Table 6.1 Status Register Format
Bit 7
SRWD
0
Bit 6
QE
0
Bit 5
BP3
0
Bit 4
BP2
0
Bit 3
BP1
0
Bit 2
BP0
0
Bit 1
WEL
0
Bit 0
WIP
0
Default
Table 6.2 Status Register Bit Definition
Read-
/Write
Bit
Name
Definition
Type
Write In Progress Bit:
"0" indicates the device is ready (default)
"1" indicates a write cycle is in progress and the device is busy
Write Enable Latch:
"0" indicates the device is not write enabled (default)
"1" indicates the device is write enabled
Bit 0
WIP
R
Volatile
Volatile
Bit 1
WEL
R/W1
Bit 2
Bit 3
Bit 4
Bit 5
BP0
BP1
BP2
BP3
Block Protection Bit: (See Tables 6.4 for details)
"0" indicates the specific blocks are not write-protected (default)
"1" indicates the specific blocks are write-protected
R/W
Non-Volatile
Quad Enable bit:
Bit 6
Bit 7
QE
“0” indicates the Quad output function disable (default)
“1” indicates the Quad output function enable
Status Register Write Disable: (See Table 7.1 for details)
"0" indicates the Status Register is not write-protected (default)
"1" indicates the Status Register is write-protected
R/W
R/W
Non-Volatile
Non-Volatile
SRWD
Note1: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command.
The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status
Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0”
at factory. The Status Register can be read by the Read Status Register (RDSR).
The function of Status Register bits are described as follows:
WIP bit: The Write In Progress (WIP) bit is read-only, and can be used to detect the progress or completion of a
program or erase operation. When the WIP bit is “0”, the device is ready for write Status or Function Register,
program or erase operation. When the WIP bit is “1”, the device is busy.
WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal write enable latch. When the
WEL is “0”, the write enable latch is disabled and all write operations described in Table 6.3 are inhibited. When
the WEL bit is “1”, write operations are allowed. The WEL bit is set by a Write Enable (WREN) instruction. Each
write register, program and erase instruction must be preceded by a WREN instruction. The WEL bit can be
reset by a Write Disable (WRDI) instruction. It will automatically be reset after the completion of any write
operation.
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Table 6.3 Instructions requiring WREN instruction ahead
Instructions must be preceded by the WREN instruction
Operation
Name
Hex Code
02h
PP
Serial Input Page Program
Quad Input Page Program
Sector Erase 4KB
PPQ
32h/38h
D7h/20h
52h
SER
BER32 (32Kbyte)
BER64 (64Kbyte)
BER32 (32Kbyte)
BER64 (64Kbyte)
CER
Block Erase 32KB
Pm25LQ040/020/010B
D8h
Block Erase 64KB
52h/D8h
NA
Block Erase 32KB
Pm25LQ512B
Block Erase 64KB
C7h/60h
01h
Chip Erase
WRSR
Write Status Register
Write Function Register
Program Information Row
WRFR
42h
IRP
62h
BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of
the memory area to be protected. Refer to Tables 6.4 for the Block Write Protection (BP) bit settings. When a
defined combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any
program or erase operation to that area will be inhibited.
Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s.
SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection
(WP#) signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not
write-protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register
(SRWD, QE, BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is
set to “1” and WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction.
QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the
QE bit is set to “0”, the pin WP# and HOLD# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins
are enabled.
WARNING: The QE bit must be set to 0 if WP# or HOLD# pin is tied directly to the power supply.
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Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits.
Status Register Bits Protected Memory Area
BP3
0
BP2
0
BP1
0
BP0
0
4Mb
2Mb
None
1Mb
None
512Kb
None
None
0
0
0
1
1 block : 7
2 blocks : 6 - 7
4 blocks : 4 - 7
1 block : 3
2 blocks : 2 - 3
1 block : 1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
All Blocks
All Blocks
All Blocks
All Blocks
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
4 blocks 0 - 3
2 blocks : 0 - 1
1 block : 0
None
1
1
0
1
2 blocks : 0 - 1
1 block : 0
None
1
1
1
0
1 block : 0
None
1
1
1
1
None
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6.2. FUNCTION REGISTER
Function Register Format and Bit definition are described in Table 6.5 and 6.6.
Table 6.5 Function Register Format
Bit 7
IRL3
0
Bit 6
IRL2
0
Bit 5
IRL1
0
Bit 4
IRL0
0
Bit 3
ESUS
0
Bit 2
PSUS
0
Bit 1
Bit 0
Reserved Reserved
Default
0
0
Table 6.6 Function Register Bit Definition
Read-
/Write
Bit
Name
Definition
Type
Bit 0
Bit 1
Reserved Reserved
Reserved Reserved
R
R
Reserved
Reserved
Program suspend bit:
Bit 2
Bit 3
Bit 4
Bit 5
Bit 6
Bit 7
PSUS
ESUS
“0” indicates program is not suspend
“1” indicates program is suspend
Erase suspend bit:
"0" indicates Erase is not suspend
"1" indicates Erase is suspend
Lock the Information Row 0:
R
Volatile
R
Volatile
IR Lock 0 “0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 1:
IR Lock 1 “0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 2:
IR Lock 2 “0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 3:
IR Lock 3 “0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
R/W
R/W
R/W
R/W
Non-Volatile
Non-Volatile
Non-Volatile
Non-Volatile
Note: Function Register bits are only One Time Programmable (OTP) and cannot be modified.
PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The
PSUS changes to “1” after a suspend command is issued during the program operation. Once the suspended
Program resumes, the PSUS bit is reset to “0”.
ESUS bit: The Erase Suspend Status indicates when an Erase operation has been suspended. The ESUS bit is
“1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the
ESUS bit is reset to “0”.
IR Lock bit 0 ~ 3: The Information Row Lock bits are programmable. If the bit set to “1”, the Information Row
can’t be programmed.
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7. PROTECTION MODE
The device supports hardware and software write-protection mechanisms.
7.1 HARDWARE WRITE PROTECTION
The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0 and
SRWD in the Status Register. Refer to the section 6.1 STATUS REGISTER.
Write inhibit voltage (VWI) is specified in the section 9.7 POWER-UP AND POWER-DOWN. All write sequence
will be ignored when Vcc drops to VWI.
Table 7.1 Hardware Write Protection on Status Register
SRWD
WP#
Low
Low
High
High
Status Register
Writable
0
1
0
1
Protected
Writable
Writable
Note: Before the execution of any program, erase or write Status/Function Register instruction, the Write Enable
Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not
enabled, the program, erase or write register instruction will be ignored.
7.2 SOFTWARE WRITE PROTECTION
The device also provides a software write protection feature. The Block Protection (BP3, BP2, BP1, and BP0)
bits allow part or the whole memory area to be write-protected.
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8. DEVICE OPERATION
The device utilizes an 8-bit instruction register. Refer to Table 8.1. Instruction Set for details on Instructions and
Instruction Codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on
Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the rising
edge of Serial Clock (SCK) after Chip Enable (CE#) is driven low (VIL). Every instruction sequence starts with a
one-byte instruction code and is followed by address bytes, data bytes, or both address bytes and data bytes,
depending on the type of instruction. CE# must be driven high (VIH) after the last bit of the instruction sequence
has been shifted in to end the operation.
Table 8.1 Instruction Set
Instruction Name Hex Code Operation
Maximum
Frequency
Mode
RD
03h
Read Data Bytes from Memory at Normal Read Mode
Read Data Bytes from Memory at Fast Read Mode
Fast Read Dual I/O
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
SPI
33MHz
FR
0Bh
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
104MHz
FRDIO
BBh
FRDO
3Bh
Fast Read Dual Output
FRQIO
EBh
Fast Read Quad I/O
FRQO
6Bh
Fast Read Quad Output
PP
02h
Page Program Data Bytes into Memory
Page Program Data Bytes into Memory with Quad Interface
Sector Erase 4KB
PPQ
32h/38h
D7h/20h
52h
SER
BER32 (32Kbyte)
BER64 (64Kbyte)
BER32 (32Kbyte)
BER64 (64Kbyte)
CER
Block Erase 32KB
Pm25LQ040B/020B/010B
Block Erase 64KB
D8h
52h/D8h
NA
Block Erase 32KB
Pm25LQ512B
Block Erase 64KB
C7h/60h
06h
Chip Erase
WREN
Write Enable
WRDI
04h
Write Disable
RDSR
05h
Read Status Register
WRSR
01h
Write Status Register
RDFR
48h
Read Function Register
Write Function Register
Suspend during the Program/Erase
Resume Program/Erase
Deep Power Down Mode
Read Manufacturer and Product ID/Release Deep Power Down
Read Unique ID Number
Read Manufacturer and Product ID by JEDEC ID Command
Read Manufacturer and Device ID
SFDP Read
WRFR
42h
PERSUS
PERRSM
DP
75h/B0h
7Ah/30h
B9h
RDID, RDPD
RDUID
ABh
4Bh
RDJDID
RDMDID
RDSFDP
RSTEN
RST
9Fh
90h
5Ah
66h
Software Reset Enable
99h
Reset
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Maximum
Mode
Instruction Name Hex Code Operation
Frequency
IRP
62h
68h
26h
24h
Program Information Row
Read Information Row
Sector Unlock
SPI
SPI
SPI
SPI
104MHz
104MHz
104MHz
104MHz
IRRD
SECUNLOCK
SECLOCK
Sector Lock
8.1 READ DATA OPERATION (RD, 03h)
The Read Data (RD) instruction is used to read memory contents of the device at a maximum frequency of
33MHz.
The RD instruction code is transmitted via the Sl line, followed by three address bytes (A23 - A0) of the first
memory location to be read. A total of 24 address bits are shifted in, but only AMSB (Most Significant Bit) - A0 are
decoded. The remaining bits (A23 – AMSB+1) are ignored. The first byte address can be at any memory location.
Upon completion, any data on the Sl will be ignored. Refer to Table 8.2 for the related Address Key.
The first byte data (D7 - D0) address is shifted out on the SO line, MSB first. A single byte of data, or up to the
whole memory array, can be read out in one READ instruction. The address is automatically incremented after
each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH)
after the data comes out. When the highest address of the device is reached, the address counter will roll over
to the 000000h address, allowing the entire memory to be read in one continuous READ instruction.
If a Read Data instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored and will not have any effects on the current cycle.
Table 8.2 Address Key
Address
Pm25LQ040B
Pm25LQ020B
Pm25LQ010B
Pm25LQ512B
A18-A0
(A23-A19=X)
A17-A0
(A23-A18=X)
A16-A0
(A23-A17=X)
A15-A0
(A23-A16=X)
AMSB–A0
Note: X=Don’t Care
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Figure 8.1 Read Data Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
3
Instruction = 03h
2
1
0
23
22
High Impedance
SO
CE#
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SCK
SI
Data Out 1
Data Out 2
SO
1
0
1
0
3
6
5
4
3
2
7
6
5
4
2
7
tV
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8.2 FAST READ DATA OPERATION (FR, 0Bh)
The Fast Read instruction is used to read memory data at up to a 104MHZ clock.
The Fast Read instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks),
transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte from
the address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling
edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single Fast Read instruction. The Fast Read
instruction is terminated by driving CE# high (VIH).
If a Fast Read instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored and will not have any effects on the current cycle.
Figure 8.2 Fast Read Data Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
3
Instruction = 0Bh
2
1
0
23
22
High Impedance
SO
CE#
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SCK
SI
Dummy Byte
Data Out
tV
SO
...
1
0
3
7
6
5
4
2
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8.3 HOLD OPERATION
HOLD# is used in conjunction with CE# to select the device. When the device is selected and a serial sequence
is underway, HOLD# can be used to pause the serial communication with the master device without resetting
the serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial
communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs
to SI will be ignored while SO is in the high impedance state, during HOLD.
Timing graph can be referenced in AC Parameters Figure 9.3.
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh)
The FRDIO instruction allows the address bits to be input two bits at a time. This may allow for code to be
executed directly from the SPI in some applications.
The FRDIO instruction code is followed by three address bytes (A23 – A0) and a mode byte, transmitted via the
IO1 and IO0 lines, with each pair of bits latched-in during the rising edge of SCK. The address MSB is input on
IO1, the next bit on IO0, and continue to shift in alternating on the two lines. If AXh (where X is don’t care) is
input for the mode byte, the device will enter AX read mode. In the AX read mode, the next instruction expected
from the device will be another FRDIO instruction and will not need the BBh instruction code so that it saves
cycles as described in Figure 8.4. If the following mode byte is not set to AXh, the device will exit AX read mode.
To avoid any I/O contention problem, X should be Hi-Z.
Once address and mode byte are input the device will read out data at the specified address. The first data byte
addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT,
during the falling edge of SCK. The first bit (MSB) is output on IO1, while simultaneously the second bit is output
on IO0. Figure 8.3 illustrates the timing sequence.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDIO instruction. FRDIO instruction is
terminated by driving CE# high (VIH).
If a FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.3 Fast Read Dual I/O Sequence (with command decode cycles)
CE#
0
1
2
3
4
5
6
7
8
9
10
...
18
19
20
21
Mode 3
Mode 0
SCK
Mode Bits
4
3-byte Address
...
IO0
IO1
2
3
Instruction = BBh
0
1
6
7
22
23
20
21
18
High Impedance
...
5
19
CE#
SCK
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
tV
...
...
...
...
...
IO0
IO1
2
3
0
1
0
1
0
1
2
2
6
7
6
7
6
7
4
2
0
1
4
4
Data Out 1
Data Out 2
Data Out 3
...
3
5
3
5
5
3
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). Anything but
AXh in the mode byte cycle will keep the same sequence.
2. To avoid I/O contention, X should be Hi-Z.
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Figure 8.4 Fast Read Dual I/O Sequence (without command decode cycles)
CE#
...
0
1
2
3
11
12
13
14
15
16
17
18
19
20
21
22
Mode 3
Mode 0
SCK
Mode Bits
tV
3-byte Address
Data Out 1
Data Out 2
4
...
...
IO0
IO1
2
3
6
7
2
3
6
7
2
0
1
4
5
0
1
4
0
1
6
7
22
23
20
21
18
...
...
3
5
5
19
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device will exit the AX read operation.
2. To avoid I/O contention, X should be Hi-Z.
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8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh)
The FRDO instruction is used to read memory data on two output pins each at up to a 104MHZ clock.
The FRDO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT,
during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously the second bit is output on
IO0.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDO instruction. FRDO instruction is
terminated by driving CE# high (VIH).
If a FRDO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.5 Fast Read Dual-Output Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
11
28
29
30
31
Mode 3
Mode 0
SCK
3-byte Address
...
3
IO0
IO1
Instruction = 3Bh
2
1
0
23
22
High Impedance
CE#
SCK
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
tV
IO0
IO1
0
1
...
...
2
6
7
4
6
7
4
2
0
1
8 Dummy Cycles
Data Out 1
Data Out 2
3
5
5
3
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8.6 FAST READ QUAD OUTPUT (FRQO, 6Bh)
The FRQO instruction is used to read memory data on four output pins each at up to a 104 MHz clock.
The FRQO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO3, IO2, IO1, and IO0 lines, with each group of four bits shifted out at a
maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRQO instruction. FRQO instruction is
terminated by driving CE# high (VIH).
If a FRQO instruction is issued while an Erase, Program or Wri
ignored and will not have any effects on the current cycle.
te cycle is in process (WIP=1) the instruction is
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Figure 8.6 Fast Read Quad-Output Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
11
28
29
30
31
Mode 3
Mode 0
SCK
IO0
3-byte Address
...
3
Instruction = 6Bh
2
1
0
23
22
High Impedance
IO1
IO2
IO3
High Impedance
High Impedance
CE#
SCK
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
tV
...
IO0
IO1
IO2
IO3
0
4
4
0
4
0
4
0
8 Dummy Cycles
Data Out 1 Data Out 2 Data Out 3 Data Out 4
1
...
...
5
5
1
5
1
5
1
2
6
6
2
6
2
6
2
3
...
7
7
3
7
3
7
3
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8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh)
The FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be
executed directly from the SPI in some applications.
The FRQIO instruction code is followed by three address bytes (A23 – A0), a mode byte, and 4 dummy cycles,
transmitted via the IO3, IO2, IO0 and IO1 lines, with each group of four bits latched-in during the rising edge of
SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit on IO0, and
continue to shift in alternating on the four. The mode byte contains the value AXh (where X is don’t care). After
four dummy clocks, the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each
group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is
output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figure 8.7
illustrates the timing sequence.
If the mode byte is AXh, the AX read mode is enabled. In the mode, the device expects that the next operation
will be another FRQIO and subsequent FRQIO execution skips command code. It saves command cycles as
described in Figure 8.8. The device will remain in this mode until the mode byte is different from AXh.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRQIO instruction. FRQIO instruction is
terminated by driving CE# high (VIH).
If a FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.7 Fast Read Quad I/O Sequence (with command decode cycles)
CE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
3-byte Address
Mode Bits
IO0
IO1
4
5
6
7
Instruction = EBh
High Impedance
0
1
2
3
4
5
6
7
0
1
2
3
20
21
22
23
16
17
18
19
12
13
14
15
8
9
IO2
10
11
IO3
CE#
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
SCK
4 Dummy Cycles
Data Out 1 Data Out 2 Data Out 3 Data Out 4
Data Out 5 Data Out 6
tV
IO0
IO1
0
1
2
3
0
1
2
3
...
...
...
...
4
5
6
7
4
5
6
7
4
5
6
7
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
0
1
2
3
IO2
IO3
Note: If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). Anything
but AXh in the mode byte cycle will keep the same sequence.
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8.8 PAGE PROGRAM OPERATION (PP, 02h)
The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single
operation. The destination of the memory to be programmed must be outside the protected memory area set by
the Block Protection (BP2, BP1, BP0) bits. The PP instruction which attempts to program into a page that is
write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be
enabled through a Write Enable (WREN) instruction.
The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the SI line.
Program operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be
executed. The internal control logic automatically handles the programming voltages and timing. During a
program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of
the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If
the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has
completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
Figure 8.8 Page Program Sequence
CE#
0
1
...
7
8
9
...
31
32
33
...
39
...
...
...
Mode 3
Mode 0
SCK
3-byte Address
Data In 1
Data In 256
...
SI
...
...
6
0
7
0
0
Instruction = 02h
7
23
22
High Impedance
SO
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8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h)
The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a
single operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must
be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input
Page Program instruction which attempts to program into a page that is write-protected will be ignored. Before
the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1” and
the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction.
The Quad Input Page Program instruction code, three address bytes and program data (1 to 256 bytes) are
input via the four pins (IO0, IO1, IO2 and IO3). Program operation will start immediately after the CE# is brought
high, otherwise the Quad Input Page Program instruction will not be executed. The internal control logic
automatically handles the programming voltages and timing. During a program operation, all instructions will be
ignored except the RDSR instruction. The progress or completion of the program operation can be determined
by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is
still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page.
The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
Figure 8.9 Quad Input Page Program Operation
CE#
0
1
2
3
4
5
6
7
8
9
...
31
32
33
34
35
Mode 3
Mode 0
SCK
3-byte Address
Data In 1
Data In 2
...
...
...
...
IO0
IO1
...
4
5
6
7
Instruction = 32h/38h
High Impedance
0
1
2
3
4
5
6
7
0
1
2
3
23
22
0
IO2
IO3
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8.10 ERASE OPERATION
The memory array of the Pm25LQ512B is organized into uniform 4Kbyte sectors or 32Kbyte uniform blocks (a
block consists of eight adjacent sectors). The memory array of the Pm25LQ010/020/040B is organized into
uniform 4Kbyte sectors or 32/64Kbyte uniform blocks (a block consists of eight/sixteen adjacent sectors
respectively).
Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to
“1”). In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase
(BER) and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without
affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation
erases the whole memory array of a device. A sector erase, block erase or chip erase operation can be
executed prior to any programming operation.
8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4Kbyte sector. Before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is reset automatically after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire
instruction sequence. The SER instruction code, and three address bytes are input via SI. Erase operation will
start immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and
timing.
During an erase operation, all instruction will be ignored except the Read Status Register (RDSR) instruction.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status
Register using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.10 Sector Erase Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
3-byte Address
...
SI
3
Instruction = D7h/20h
High Impedance
2
1
0
23
22
SO
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8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)
A Block Erase (BER) instruction erases a 32/64Kbyte block. Before the execution of a BER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after
the completion of a block erase operation.
The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after
the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic
automatically handles the erase voltage and timing.
Figure 8.11 Block Erase (64K) Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
3-byte Address
...
SI
3
Instruction = D8h
2
1
0
23
22
High Impedance
SO
Figure 8.12 Block Erase (32K) Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
3-byte Address
...
SI
3
Instruction = 52h
2
1
0
23
22
High Impedance
SO
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8.13 CHIP ERASE OPERATION (CER, C7h/60h)
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the
Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically
after completion of a chip erase operation.
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase
voltage and timing.
Figure 8.13 Chip Erase Sequence
CE#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
Instruction = C7h/60h
High Impedance
SI
SO
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8.14 WRITE ENABLE OPERATION (WREN, 06h)
The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to
the write-protected state after power-up. The WEL bit must be write enabled before any write operation,
including Sector Erase, Block Erase, Chip Erase, Page Program, Write Status Register, and Write Function
Register operations. The WEL bit will be reset to the write-protected state automatically upon completion of a
write operation. The WREN instruction is required before any above operation is executed.
Figure 8.14 Write Enable Sequence
CE#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
Address
Instruction = 06h
High Impedance
SI
SO
8.15 WRITE DISABLE OPERATION (WRDI, 04h)
The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI
instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset.
Figure 8.15 Write Disable Sequence
CE#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
Instruction = 04h
SI
High Impedance
SO
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8.16 READ STATUS REGISTER OPERATION (RDSR, 05h)
The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a
program, erase or write Status Register operation, all other instructions will be ignored except the RDSR
instruction, which can be used to check the progress or completion of an operation by reading the WIP bit of
Status Register.
Figure 8.16 Read Status Register Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
SI
Instruction = 05h
tV
Data Out
SO
3
2
1
0
7
6
5
4
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h)
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and
Status Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and
SRWD bits. Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into
the non-volatile QE bit.
Figure 8.17 Write Status Register Sequence
CE#
0
1
2
3
4
5
6
7
8
7
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
Data In
SI
Instruction = 01h
2
1
0
3
6
5
4
High Impedence
SO
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8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h)
The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6
Function Register Bit Definition for more detail.
Figure 8.18 Read Function Register Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
SI
Instruction = 48h
tV
Data Out
SO
3
2
1
0
7
6
5
4
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)
The Write Function Register (WRFR) instruction allows the user to lock the Information Row by bit 0. (IR Lock)
Figure 8.19 Write Function Register Sequence
CE#
0
1
2
3
4
5
6
7
8
7
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
Data In
SI
Instruction = 42h
2
1
0
3
6
5
4
High Impedence
SO
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8.20 PROGRAM/ERASE SUSPEND & RESUME
The device allows the interruption of Sector-Erase, Block-Erase or Page-Program operations to conduct other
operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. Function Register bit2 (PSUS)
and bit3 (ESUS) are used to check whether or not the device is in suspend mode.
Suspend to read ready timing: 100µs.
Resume to another suspend timing: 400µs (recommendation).
PROGRAM/ERASE SUSPEND DURING SECTOR-ERASE OR BLOCK-Erase (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of Sector Erase and Block Erase operations. After the
Program/Erase Suspend, WEL bit will be disabled, therefore only read related, resume and reset commands
can be accepted (Refer to Table 8.3 for more detail).
To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the erase has been
suspended by changing the ESUS bit from “0” to “1”, but the device will not accept another command until it is
ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or wait
the specified time tSUS. When ESUS bit is issued, the Write Enable Latch (WEL) bit will be reset.
PROGRAM/ERASE SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of all program operations. After the Program/Erase
Suspend command, WEL bit will be disabled, therefore only read related, resume and reset commands can be
accepted (Refer to Table 8.3 for more detail).
To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the programming has
been suspended by changing the PSUS bit from “0” to “1”, but the device will not accept another command until
it is ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or
wait the specified time tSUS
.
PROGRAM/ERASE RESUME (PERRSM 7Ah/30h)
The Program/Erase Resume restarts a Program or Erase command that was suspended, and changes the
suspend status bit in the Function Register (ESUS or PSUS bits) back to “0”. To execute the Program/Erase
Resume operation, the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then
drives CE# high. A cycle is two nibbles long, most significant nibble first. To determine if the internal, self-timed
Write operation completed, poll the WIP bit in the Status Register, or wait the specified time tSE, tBE or tPP for
Sector Erase, Block Erase, or Page Programming, respectively. The total write time before suspend and after
resume will not exceed the uninterrupted write times tSE, tBE or tPP.
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Table 8.3 Instructions accepted during Suspend
Operation
Instruction Allowed
Suspended
Name
RD
Hex Code
03h
Operation
Read Data Bytes from Memory at Normal Read Mode
Read Data Bytes from Memory at Fast Read Mode
Fast Read Dual I/O
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
Program or Erase
FR
0Bh
FRDIO
FRDO
FRQIO
FRQO
RDSR
RDFR
PERRSM
RDID
BBh
3Bh
Fast Read Dual Output
EBh
6Bh
Fast Read Quad I/O
Fast Read Quad Output
05h
Read Status Register
48h
Read Function Register
7Ah/30h
ABh
4Bh
Resume program/erase
Read Manufacturer and Product ID
Read Unique ID Number
RDUID
RDJDID
RDMDID
RDSFDP
RSTEN
RST
9Fh
Read Manufacturer and Product ID by JEDEC ID Command
Read Manufacturer and Device ID
SFDP Read
90h
5Ah
66h
Software reset enable
99h
Reset (Only along with 66h)
Read Information Row
IRRD
68h
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8.21 DEEP POWER DOWN (DP, B9h)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter
into Power-down mode), and the standby current is reduced from Isb1 to Isb2. During the Power-down mode, the
device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by driving
the CE# pin low and shifting the instruction code “B9h” as show in the figure 8.20. The CE# pin must be driven
high after the instruction has been latched. If this is not done the Power-Down will not be executed. After CE#
pin driven high, the power-down state will be entered within the time duration of tDP. While in the power-down
state only the Release from Power-down/RDID instruction, which restores the device to normal operation, will be
recognized. All other instructions are ignored. This includes the Read Status Register instruction, which is
always available during normal operation. Ignoring all but one instruction makes the Power Down state a useful
condition for securing maximum write protection. It can support in SPI and Multi-IO mode.
Figure 8.20 Enter Deep Power Down Mode Operation. (SPI)
CE#
tDP
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
SI
...
Instruction = B9h
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8.22 RELEASE DEEP POWER DOWN (RDPD, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. To release the device
from the deep power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction
code “ABh” and driving CE# high as shown in Figure 8.21.
Release from power-down will take the time duration of tRES1 before the device will resume normal operation
and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration.
If the Release from Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in process
(when WIP equals 1) the instruction is ignored and will not have any effects on the current cycle.
Figure 8.21 Release Power Down Sequence (SPI)
CE#
tRES1
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
SI
...
Instruction = ABh
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8.23 READ PRODUCT IDENTIFICATION (RDID, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI
and Multi-IO mode. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit
Electronic Signature, whose values are shown as table of Product Identification.
For Pm25LQ020B/010B/512B:
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising
SCK edge. Then the Device ID1 is shifted out on SO with the MSB first, each bit been shifted out during the
falling edge of SCK. The RDID instruction is ended by CE# going high. The Device ID1 outputs repeatedly if
additional clock cycles are continuously sent on SCK while CE# is at low.
For Pm25LQ040B:
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SIO during the rising
edge of SCK. Then the first byte Manufacturer ID (9Dh) is shifted out on SO with the MSB first, followed by the
Device ID1 (7Eh) and the second byte Manufacturer ID (7Fh), each bit been shifted out during the falling edge
of SCK. If the CE# stays low after the last bit of second byte Manufacturer ID is shifted out, the Manufacturer
IDs and Device ID1 will be looping until the pulled high of CE# signal.
Table 8.4 Product Identification
Instruction (ABh, 90h, 9Fh)
Manufacturer ID
Data
9Dh
ISSI Serial Flash First Byte
ISSI Serial Flash Second Byte
7Fh
Device Density
Device ID1
7Eh
Device ID2
7Eh
4Mb
2Mb
1Mb
512K
11h
42h
10h
21h
05h
20h
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Figure 8.22 Read Product Identification Sequence
For Pm25LQ020B/010B/512B:
CE#
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
Mode 3
Mode 0
SCK
SI
Instruction = ABh
3 Dummy Bytes
tV
SO
Device ID1
Device ID1
Device ID1
For Pm25LQ040B:
CE#
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
Mode 3
SCK
Mode 0
SI
Instruction = ABh
3 Dummy Bytes
tV
SO
Manufacturer ID1
Device ID1
Manufacturer ID2
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8.24 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh)
The JEDEC ID READ instruction allows the user to read the Manufacturer and Product ID of devices. Refer to
Table 8.4 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command is
input, the second byte Manufacturer ID (Manufacturer ID2) is shifted out on SO with the MSB first, followed by
the first byte Manufacturer ID (Manufacturer ID1) and the Device ID2, each bit shifted out during the falling edge
of SCK. If CE# stays low after the last bit of the Device ID2 is shifted out, the Manufacturer IDs and Device ID2
will loop until CE# is pulled high.
Figure 8.23 Read Product Identification by JEDEC ID READ Sequence
CE#
0
1
...
7
8
9
...
15
16
17
...
23
24
25
...
31
Mode 3
Mode 0
SCK
SI
Instruction = 9Fh
tV
SO
Manufacturer ID2
Device ID2
Manufacturer ID1
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8.25 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h)
The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer
and product ID of devices. Refer to Table 8.4 Product Identification for Manufacturer ID and Device ID. The
RDMDID command is input, followed by a 24-bit address (A23~A0) pointing to an ID table, each bit being
latched-in on SI during the rising edge of SCK. The table contains the first byte Manufacturer ID (Manufacturer
ID1), the second byte Manufacturing ID (Manufacturer ID2) and Device ID1. If A0 = 0 (A23-A1 bits are don’t
care), then Manufacturer ID1 is shifted out on SO with the MSB first, followed by Device ID1 and Manufacturer
ID2, each bit shifted out during the falling edge of SCK. If A0 = 1 (A23-A1 bits are don’t care), then Device ID1
will be read first, followed by Manufacturer ID1 and Manufacturing ID2. If CE# stays low after the last bit of
Manufacturer ID2 is shifted out, the Manufacturer IDs and Device ID1 will loop as the sequence determined by
A0 until CE# is pulled high.
Figure 8.24 Read Product Identification by RDMDID READ Sequence
CE#
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
Mode 3
Mode 0
SCK
SI
Instruction = 90h
3 Byte Address
tV
SO
Manufacturer ID1
Device ID1
Manufacturer ID2
Notes:
1. ADDRESS A0 = 0, will output Manufacture ID1 first Device ID1 next Manufacture ID2 next
ADDRESS A0 = 1, will output Device ID1 first Manufacture ID1 next Manufacture ID2 next
2. The Manufacture IDs and Device ID1 can be read continuously and will alternate between the three until CE# pin
is pulled high.
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8.26 READ UNIQUE ID NUMBER (RDUID, 4Bh)
The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is
unique to the device. The ID number can be used in conjunction with user software methods to help prevent
copying or cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the
instruction code (4Bh) followed by 3 address bytes and a dummy byte. After which, the 16-byte ID is shifted out
on the falling edge of SCK as shown below.
Note: 16-byte of data will repeat as long as CE# is low and SCK is toggling.
Figure 8.25 Read Product Identification Sequence
CE#
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
Mode 3
Mode 0
SCK
SI
Instruction = 4Bh
3 Byte Address
Dummy Byte
tV
SO
Data Out
Table 8.5 Unique ID Addressing
A[23:16]
XXh
A[15:9]
XXh
A[8:4]
00h
A[3:0]
0h Byte address
1h Byte address
2h Byte address
XXh
XXh
00h
XXh
XXh
00h
XXh
XXh
00h
XXh
XXh
00h
Fh Byte address
Note: XX means “don’t care”.
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8.27 READ SFDP OPERATION (RDSFDP, 5Ah)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the
functional and feature capabilities of serial Flash devices in a standard set of internal parameter tables. These
parameter tables can be interrogated by host system software to enable adjustments needed to accommodate
divergent features from multiple vendors. For more details please refer to the JEDEC Standard JESD216A
(Serial Flash Discoverable Parameters).
The sequence of issuing RDSFDP instruction is same as Fast Read instruction: CE# goes low send RDSFDP
instruction (5Ah) send 3 address bytes on SI pin send 1 dummy byte on SI pin read SFDP code on SO
to end RDSFDP operation can use CE# high at any time during data out. Refer to ISSI’s Application note for
SFDP table. The data at the addresses that are not specified in SFDP table are undefined.
Figure 8.26 RDSFDP COMMAND (Read SFDP) OPERATION
CE#
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
Mode 3
Mode 0
SCK
SI
Instruction = 5Ah
3 Byte Address
Dummy Byte
tV
SO
Data Out
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8.28 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)
The Reset operation is used as a system (software) reset that puts the device in normal operating mode. This
operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The Reset operation requires
the Reset-Enable command followed by the Reset command. Any command other than the Reset command
after the Reset-Enable command will disable the Reset-Enable.
Execute the CE# pin low sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives
CE# low again, sends the Reset command (99h), and drives CE# high.
The Software Reset during an active Program or Erase operation aborts the operation, which can result in
corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing
may vary. Recovery from a Write operation requires more latency time than recovery from other operations.
Note: The Status and Function Registers remain unaffected.
Figure 8.27 SOFTWARE RESET ENABLE, SOFTWARE RESET OPERATIONS (RSTEN, 66h + RST, 99h)
CE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
SCK
Instruction = 66h
High Impedance
Instruction = 99h
SI
SO
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8.29 SECURITY INFORMATION ROW (OTP AREA)
The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The
security bits can be reprogrammed by the user. Any program security instruction issued while program cycle is
in progress is rejected without having any effect on the cycle that is in progress.
Table 8.6 Information Row Valid Address Range
Address Assignment
A[23:16]
00h
A[15:8]
00h
A[7:0]
IRL0 (Information Row Lock0)
Byte address
Byte address
Byte address
Byte address
IRL1
IRL2
IRL3
00h
10h
00h
20h
00h
30h
Bit 7~4 of the Function Register is used to permanently lock the programmable memory array.
-When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed.
-When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only.
8.30 INFORMATION ROW PROGRAM OPERATION (IRP, 62h)
The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory
in a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled
through a Write Enable (WREN) instruction.
The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input
via the SI line. Three address bytes has to be input as specified in the Table 8.6 Information Row Valid Address
Range. Program operation will start once the CE# goes high, otherwise the IRP instruction will not be executed.
The internal control logic automatically handles the programming voltages and timing. During a program
operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the
program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the
WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The
previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: Information Row is only One Time Programmable (OTP). Once an Information Row is programmed, the data
cannot be altered.
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Figure 8.28 IRP COMMAND (Information Row Program) OPERATION
CE#
0
1
...
7
8
9
...
31
32
33
...
39
...
...
...
Mode 3
Mode 0
SCK
3-byte Address
Data In 1
Data In 256
...
SI
...
...
6
0
7
0
0
Instruction = 62h
7
23
22
High Impedance
SO
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8.31 INFORMATION ROW READ OPERATION (IRRD, 68h)
The IRRD instruction is used to read memory data at up to a 104MHZ clock.
The IRRD instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks),
transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling
edge of SCK.
The address is automatically incremented by one after each byte of data is shifted out. Once the address
reaches the last address of each 256 byte Information Row, the next address will not be valid and the data of
the address will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte
with a valid starting address of each Information Row in order to read all data in the 4 x 256 byte Information
Row array. The IRRD instruction is terminated by driving CE# high (VIH).
If a IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle
Figure 8.29 IRRD COMMAND (Information Row Read) OPERATION
CE#
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
Mode 3
Mode 0
SCK
SI
Instruction = 68h
3 Byte Address
Dummy Byte
tV
SO
Data Out
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8.32 SECTOR LOCK/UNLOCK FUNCTIONS
SECTOR UNLOCK OPERATION (SECUNLOCK, 26h)
The Sector Unlock command allows the user to select a specific sector to allow program and erase operations.
This instruction is effective when the blocks are designated as write-protected through the BP0, BP1, BP2, and
BP3 bits in the Status Register. Only one sector can be enabled at any time. If many SECUNLOCK commands
are input, only the last sector designated by the last SECUNLOCK command will be unlocked. The instruction
code is followed by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The
remaining sectors within the same block remain as read-only.
Figure 8.59 Sector Unlock Sequence
CE#
0
1
2
3
4
5
6
7
8
9
10
21
...
28
29
30
31
Mode 3
Mode 0
SCK
3-byte Address
...
SI
Instruction = 26h
3
2
1
0
23
22
High Impedance
SO
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SECTOR LOCK OPERATION (SECLOCK, 24h)
The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The
instruction code does not require an address to be specified, as only one sector can be enabled at a time. The
remaining sectors within the same block remain in read-only mode.
Figure 8.60 Sector Lock Sequence
CE#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCK
SI
Instruction = 24h
High Impedance
SO
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9. ELECTRICAL CHARACTERISTICS
9.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
-65°C to +150°C
Standard Package
Lead-free Package
240°C 3 Seconds
260°C 3 Seconds
-0.5V to VCC + 0.5V
-0.5V to VCC + 0.5V
-0.5V to +6.0V
Surface Mount Lead Soldering Temperature
Input Voltage with Respect to Ground on All Pins
All Output Voltage with Respect to Ground
VCC
Electrostatic Discharge Voltage (Human Body Model)(2)
-2000V to +2000V
Note:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. ANSI/ESDA/JEDEC JS-001
9.2 OPERATING RANGE
Part Number
Pm25LQ040B/020B/010B/512B
-40°C to 85°C
Operating Temperature
VCC Power Supply
2.3V (VMIN) – 3.6V (VMAX); 3.0V (Typ)
9.3 DC CHARACTERISTICS
(Under operating range)
Symbol
Parameter
Condition
Min
Typ(2)
Max
Units
ICC1
VCC Active Read Current
VCC = VMAX at 33MHz, SO = Open
10
15
mA
VCC Program/Erase
Current
ICC2
ISB1
VCC = VMAX at 33MHz, SO = Open
15
30
mA
25°C
10
µA
µA
µA
µA
µA
µA
V
VCC Standby Current
CMOS
VCC = VMAX, CE# = VCC
85°C
25°C
85°C
15
5
ISB2
Deep power down current VCC = VMAX, CE# = VCC
7
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
VIN = 0V to VCC
VIN = 0V to VCC
1
1
ILO
(1)
VIL
-0.5
0.3VCC
VCC + 0.3
0.2
(1)
VIH
Input High Voltage
0.7VCC
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 100 µA
IOH = -100 µA
V
VMIN < VCC < VMAX
VCC - 0.2
V
Notes:
1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may
overshoot VCC by +2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed 20ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at
VCC = VCC (Typ), TA=25°C.
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9.4 AC MEASUREMENT CONDITIONS
Symbol Parameter
Min
Max
30
5
Units
pF
ns
V
CL
Load Capacitance
TR,TF
VIN
Input Rise and Fall Times
Input Pulse Voltages
0.2VCC to 0.8VCC
VREFI
VREFO
Input Timing Reference Voltages
Output Timing Reference Voltages
0.3VCC to 0.7VCC
0.5VCC
V
V
Figure9.1 Output test load & AC measurement I/O Waveform
0.8VCC
AC
Input
VCC/2
Measurement
Level
1.8k
0.2VCC
OUTPUT PIN
1.2k
30pf
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9.5 AC CHARACTERISTICS
(Under operating range, refer to section 9.4 for AC measurement conditions)
Symbol
Parameter
Min
Typ
Max
104
33
8
Units
MHz
MHz
ns
fCT
Clock Frequency for fast read mode
Clock Frequency for read mode
Input Rise Time
0
fC
0
tRI
tFI
Input Fall Time
8
ns
tCKH
tCKL
tCEH
tCS
SCK High Time
4
4
ns
SCK Low Time
ns
CE# High Time
7
ns
CE# Setup Time
10
5
ns
tCH
CE# Hold Time
ns
tDS
Data In Setup Time
2
ns
tDH
Data in Hold Time
2
ns
tHS
Hold Setup Time
ns
15
15
tHD
Hold Time
ns
tV
Output Valid
8
8
ns
tOH
Output Hold Time
2
ns
tDIS
tHLCH
tCHHH
tHHCH
tCHHL
tLZ
Output Disable Time
ns
HOLD Active Setup Time relative to SCK
HOLD Active Hold Time relative to SCK
HOLD Not Active Setup Time relative to SCK
HOLD Not Active Hold Time relative to SCK
HOLD to Output Low Z
HOLD to Output High Z
Sector Erase Time (4Kbyte)
Block Erase Time (32Kbyte)
Block Erase time (64Kbyte)(1)
5
5
5
5
ns
ns
ns
ns
12
12
300
500
1000
1
ns
tHZ
ns
70
130
200
0.25
0.4
ms
ms
ms
tEC
512Kb
1Mb
2Mb
4Mb
1.5
2
Chip Erase Time
s
0.75
1.5
3
tPP
Page Program Time
0.5
0.8
3
ms
µs
µs
ms
µs
µs
tres1
tDP
Release deep power down
Deep power down
3
tW
Write Status Register time
Suspend to read ready
Software Reset cover time
2
10
100
100
tSUS
tSRST
Note1: 64Kbyte Block Erase time is not applicable to Pm25LQ512B.
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9.6 SERIAL INPUT/OUTPUT TIMING
Figure 9.2 SERIAL INPUT/OUTPUT TIMING (1)
tCEH
CE#
tCS
tCH
tCKH
tCKL
SCK
SI
tDS
tDH
VALID IN
VALID IN
tV
tOH
tDIS
HI-Z
HI-Z
SO
VALID OUTPUT
Note1: For SPI Mode 0 (0,0)
Figure 9.3 HOLD TIMING
CE#
tHLCH
tCHHL
tHHCH
SCK
tCHHH
tHZ
tLZ
SO
SI
HOLD#
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9.7 POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding
a simple pull-up resistor on CE# is recommended.)
Power up timing
VCC
VCC(max)
All Write Commands are Rejected
Chip Selection Not Allowed
VCC(min)
Reset State
Device fully
accessible
tVCE
Read Access Allowed
V(write inhibit)
tPUW
Symbol
tVCE(1)
tPUW(1)
Parameter
Min.
1
Max
Unit
ms
ms
V
Vcc(min) to CE# Low
Power-up time delay to write instruction
Write Inhibit Voltage
1
10
(1)
VWI
2.1
Note1: These parameters are characterized and are not 100% tested.
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9.8 PROGRAM/ERASE PERFORMANCE
Unit
ms
Parameter
Typ
70
Max
300
500
1000
1
Remarks
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
512Kb
130
200
0.25
0.4
ms
ms
From writing erase command to erase
completion
1.5
2
1Mb
s
Chip Erase Time
2Mb
0.75
1.5
3
4Mb
Page Programming Time
Byte Program
ms
µs
0.5
8
0.8
25
From writing program command to
program completion
Note: These parameters are characterized and are not 100% tested.
9.9 RELIABILITY CHARACTERISTICS
Parameter
Endurance
Min
100,000
20
Max
Unit
Test Method
-
-
Cycles
Years
mA
JEDEC Standard A117
JEDEC Standard A117
JEDEC Standard 78
Data Retention
Latch-Up
-100
+100
Note: These parameters are characterized and are not 100% tested.
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10.PACKAGE TYPE INFORMATION
10.1 8-PIN JEDEC 150MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (S)
Note: Lead co-planarity is 0.08mm.
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10.2 8-PIN TSSOP PACKAGE (D)
Note: Lead co-planarity is 0.08mm
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11.ORDERING INFORMATION
Pm25LQ040B
-
S
C
E
ENVIRONMENTAL ATTRIBUTE
E = Lead-free (Pb-free) and Halogen-free package
TEMPERATURE RANGE
C = -40°C to +85°C
PACKAGE TYPE
S = 8-pin SOIC 150mm
D = 8-pin TSSOP
DIE REVISION
B = Revision B
DENSITY
040 = 4 Mbit
020 = 2 Mbit
010 = 1 Mbit
512 = 512 Kbit
BASE PART NUMBER
Pm = pFLASH
25LQ = FLASH, 2.3V ~ 3.6V, Quad SPI
Density
4Mb
Frequency (MHz)
Order Part Number
Pm25LQ040B-SCE
Pm25LQ020B-SCE
Pm25LQ020B-DCE
Pm25LQ010B-SCE
Pm25LQ010B-DCE
Pm25LQ512B-SCE
Pm25LQ512B-DCE
Package
Temp Range
8-pin SOIC 150mil
8-pin SOIC 150mil
8-pin TSSOP
2Mb
1Mb
104
8-pin SOIC 150mil
8-pin TSSOP
-40°C to +85°C
8-pin SOIC 150mil
8-pin TSSOP
512K
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APPENDIX 1. : SAFEGUARD FUNCTION
SAFEGUARD offers an alternative way to protect the memory array. When SAFEGUARD is implemented every
single 4Kbyte sector can be locked (protected) or unlocked (unprotected). Each sector is protected by setting a
“0” or “1” to max 4K bits of SAFEGUARD Register. When set to “0” the corresponding sector is protected and
vice versa.
SAFEGUARD has lower priority than BP bits. This means SAFEGUARD will be effective only if BP bits are all “0”
so that all blocks are unprotected. If any block is protected by BP bits, SAFEGUARD will be ignored. To unlock
all blocks, please make sure that BP bits are set to all “0” and also SAFEGUARD Register is set to all “1”.
The mapping table (Table A.1) represents sector assignment for each bit of data out/in of Read/Program
SAFEGUARD Register commands respectively according to an address.
D7-D0 for each address group is mapped to a single sector. For instance, if the output of the address 000h is
00001010b (Ah), then only the sectors 1 and 3 are unlocked while the remaining are locked.
If Block Erase commands (32Kbyte Block and 64K byte Block) are executed for the block which has at least a
sector protected by SAFEGUARD, it will be ignored so that it does not erase any data in the block.
As to Chip Erase command, all other blocks are erased except for the blocks which has at least a sector
protected by SAFEGUARD.
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Table A.1. Mapping table for SAFEGUARD Register1
Block No.
Sector Assignment
Address
64Kbyte2 32Kbyte
D7
D6
D5
D4
D3
D2
D1
D0
decimal
Sector
7
Sector
15
Sector
6
Sector
14
Sector
5
Sector
13
Sector
4
Sector
12
Sector
3
Sector
11
Sector
2
Sector
10
Sector
1
Sector
9
Sector
0
Sector
8
Block 0
Block 0
0
1
Block 1
Sector
23
Sector
31
Sector
22
Sector
30
Sector
21
Sector
29
Sector
12
Sector
28
Sector
19
Sector
27
Sector
18
Sector
26
Sector
17
Sector
25
Sector
16
Sector
24
Block 2
Block 1
2
Block 3
3
Sector
39
Sector
47
Sector
38
Sector
46
Sector
37
Sector
45
Sector
36
Sector
44
Sector
35
Sector
43
Sector
34
Sector
42
Sector
33
Sector
41
Sector
32
Sector
40
Block 4
Block 2
4
Block 5
5
Sector
55
Sector
63
Sector
54
Sector
62
Sector
53
Sector
61
Sector
52
Sector
60
Sector
51
Sector
59
Sector
50
Sector
58
Sector
49
Sector
57
Sector
48
Sector
56
Block 6
Block 3
6
Block 7
7
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
Sector
16N+7
Sector
Sector
16N+6
Sector
Sector
16N+5
Sector
Sector
16N+4
Sector
Sector
16N+3
Sector
Sector
16N+2
Sector
Sector
16N+1
Sector
16N+9
Sector
16N
Sector
16N+8
Block 2N
2N
2N+1
Block N3
Block
2N+1
16N+15 16N+14 16N+13 16N+12 16N+11 16N+10
Notes:
1. The SAFEGUARD Register is non-volatile and the default value of all the SAFEGUARD Register bit is “1”.
2. 64Kbyte Block is not available for Pm25LQ512B.
3. N is dependent to device density as following.
Density
4M
2M
1M
512K
N
7
3
1
0
(Decimal)
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READ SAFEGUARD REGISTER (2Fh)
The Read SAFEGUARD Register instruction will be operated in normal read mode.
Normal Read SAFEGUARD Register instruction code 2Fh is transmitted via the SI pin, followed by three
address bytes (A23 - A0), but only A7-A0 will be decoded. The first byte of data (D7 - D0) shifts out on the SO
line, MSB first. The address is automatically incremented after each byte of data is shifted out. The data is valid
only for the valid address range dependent to the device density. The operation can be terminated at any time
by driving CE# high (VIH). See Figure A.1 for the Normal Read SAFEGUARD Register sequence.
Table A.2. Valid Address Range
Device
Density
Decoding
Address
Valid Address
Range
4M
A7-A0
A7-A0
A7-A0
A7-A0
A3-A0 (0-Fh)
A2-A0 (0-7h)
A1-A0 (0-3h)
A0 (0-1h)
2M
1M
512K
Example: To find out which sectors are locked or unlocked for IS25LQ040B, enter the 2Fh command followed
by (A23-A0) = XXXX XXXX XXXX 0000 0000b (where X is don’t care), D7-D0 will output for Sector 7-Sector 0
(MSB first), followed by D7-D0 for sector 15-sector 8, and so on until CE# is pulled high.
After Program/Erase suspend, the Read SAFEGUARD Register command (2Fh) can be accepted.
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Figure A.1. Normal Read SAFEGUARD Register Sequence
CE#
...
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
Mode 3
Mode 0
SCK
3-byte Address
SI
...
0
Instruction = 2Fh
23
22
1st Byte Data Out
2nd Byte Data Out
tV
High Impedance
SO
...
6
...
6
...
7
0
0
7
ERASE SAFEGUARD REGISTER (2Bh)
Erasing the SAFEGUARD Register will reset the mapping table and unprotect all sectors. Four continuous
instruction sequence (55h-AAh-80h-AAh) shall be required for write enable before the Erase SAFEGUARD
Register command as Figure A.2. Four continuous instruction sequence can be replaced by WREN (06h)
command. If the number of clocks is not match 8 for the command, then the instruction will be regarded as an
incorrect instruction so that it will be ignored.
The Erase SAFEGUARD Register instruction is entered, after CE# is pulled low to select the device and stays
low during the entire instruction sequence. The Erase SAFEGUARD Register instruction code is input via SI.
Erase operation will start immediately after CE# is pulled high, otherwise the Erase SAFEGUARD Register
instruction will not be executed. The internal control logic automatically handles the programming voltages and
timing. See Figure A.3 for the Erase SAFEGUARD Register sequence.
During an erase operation, all instruction will be ignored except the Read Status Register (RDSR) instruction.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status
Register using a RDSR instruction. If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is
“0”, the erase operation has been completed.
Program/Erase Suspend command is not applied to the Erase SAFEGUARD Register command.
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Figure A.2. Four Continuous Instruction Sequence before the Erase SAFEGUARD Register Command
CE#
0
1
...
7
8
9
...
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
0
Instruction = 55h
23
22
CE#
SCK
0
1
...
7
8
9
...
31
Mode 3
Mode 0
3-byte Address
SI
...
0
Instruction = AAh
23
22
CE#
0
1
...
7
8
9
...
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
0
Instruction = 80h
23
22
CE#
SCK
0
1
...
7
8
9
...
31
Mode 3
Mode 0
3-byte Address
SI
...
0
Instruction = AAh
23
22
Notes:
1. The sequence can be replaced by WREN (06h).
2. The 3-bye address (A23 – A0) is don’t care.
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Figure A.3. Erase SAFEGUARD Register Sequence
CE#
SCK
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SI
Instruction = 2Bh
High Impedance
SO
PROGRAM SAFEGUARD REGISTER (23h)
The Program SAFEGUARD Register command is similar to the Erase SAFEGUARD Register command. To
program SAFEGUARD Register, four continuous instruction sequence (55h-AAh-A0h-AAh) is needed for write
enable before the Program SAFEGUARD Register command as Figure A.4. Four continuous instruction
sequence can be replaced by WREN (06h) command. If the number of clocks is not match 8 (command) + 24
(address) + 8 x n (n=the number of data), then the instruction will be regarded as an incorrect instruction so that
it will be ignored.
The Program SAFEGUARD Register instruction code 23h is transmitted via the SI pin, followed by three
address bytes (A23 - A0) and program data (1 to 256 bytes) like Page Program sequence. The first byte of data
(D7 - D0) shifts in on the SI line, MSB first. The address is automatically incremented after each byte of data is
shifted in. The data is valid only for the valid address range.
Program operation will start immediately after the CE# is brought high, otherwise the Program SAFEGUARD
Register instruction will not be executed. The internal control logic automatically handles the programming
voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction.
The progress or completion of the program operation can be determined by reading the WIP bit in Status
Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”,
the program operation has completed. See Figure A.5 for how to program the SAFEGUARD Register.
Program/Erase Suspend command is not applied to Program SAFEGUARD Register command.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
08/05/2015
68
Pm25LQ040B/020B/010B/512B
Figure A.4. Four Continuous Instruction Sequence before the Program SAFEGUARD Register Command
CE#
0
1
...
7
8
9
...
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
0
Instruction = 55h
23
22
CE#
SCK
0
1
...
7
8
9
...
31
Mode 3
Mode 0
3-byte Address
SI
...
0
Instruction = AAh
23
22
CE#
0
1
...
7
8
9
...
31
Mode 3
Mode 0
SCK
SI
3-byte Address
...
0
Instruction = A0h
23
22
CE#
SCK
0
1
...
7
8
9
...
31
Mode 3
Mode 0
3-byte Address
SI
...
0
Instruction = AAh
23
22
Notes:
1. The sequence can be replaced by WREN (06h).
2. The 3-bye address (A23 – A0) is don’t care.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
08/05/2015
69
Pm25LQ040B/020B/010B/512B
Figure A.5. Program SAFEGUARD Register Sequence
CE#
...
...
0
1
...
7
8
9
...
31
32
33
...
39
40
...
41
...
47
Mode 3
Mode 0
SCK
1st Byte Data In
2nd Byte Data In
3-byte Address
SI
...
6
...
7
...
0
7
0
0
Instruction = 23h
23
22
High Impedance
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
08/05/2015
70
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