IS61WV20488BLL-10MLI-TR [ISSI]

Standard SRAM, 2MX8, 10ns, CMOS, PBGA48;
IS61WV20488BLL-10MLI-TR
型号: IS61WV20488BLL-10MLI-TR
厂家: INTEGRATED SILICON SOLUTION, INC    INTEGRATED SILICON SOLUTION, INC
描述:

Standard SRAM, 2MX8, 10ns, CMOS, PBGA48

静态存储器 内存集成电路
文件: 总19页 (文件大小:312K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS61WV20488ALL  
IS61/64WV20488BLL  
2M x 8 HIGH-SPEED CMOS STATIC RAM  
June 2014  
FEATURES  
DESCRIPTION  
•ꢀ High-speed access times:  
TheꢀISSIꢀIS61WV20488ALL/BLLꢀandꢀ  
8, 10, 20 ns  
IS64WV20488BLLꢀareꢀveryꢀhigh-speed,ꢀlowꢀ  
power,ꢀ2M-wordꢀbyꢀ8-bitꢀCMOSꢀstaticꢀRAM.ꢀTheꢀ  
IS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀareꢀfab-  
ricated using ISSI'sꢀhigh-performanceꢀCMOSꢀtechnol-  
ogy.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀ  
circuit design techniques, yields higher performance  
and low power consumption devices.  
•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess  
•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀ  
greater noise immunity  
•ꢀ EasyꢀmemoryꢀexpansionꢀwithꢀCE and OE op-  
tions  
•ꢀ CE power-down  
When CE is HIGH (deselected), the device assumes  
a standby mode at which the power dissipation can be  
reducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
required  
•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs  
•ꢀ Singleꢀpowerꢀsupply  
TheꢀIS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀ  
operate from a single power supply and all inputs are  
TTL-compatible.ꢀ  
– Vddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV20488ALL)  
speed = 20ns for Vcc = 1.65V to 2.2V  
– Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV20488BLL)  
speed = 10ns for Vcc = 2.4V to 3.6V  
speed = 8ns for Vcc = 3.3V + 5%  
•ꢀ Packagesꢀavailable:  
TheꢀIS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀareꢀ  
availableꢀinꢀ48ꢀballꢀminiꢀBGAꢀandꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ  
packages.  
48-ball miniBGA (9mm x 11mm)  
ꢀ –ꢀꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ  
•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport  
•ꢀ Lead-freeꢀavailable  
FUNCTIONAL BLOCK DIAGRAM  
2M X 8  
MEMORY ARRAY  
A0-A20  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. C  
06/23/2014  
              
IS61WV20488ALL, IS61/64WV20488BLL  
PIN CONFIGURATION  
48-pin Mini BGA (M ) (9mm x 11mm)  
44-pin TSOP (Type II )  
1
2
3
4
5
6
NC  
NC  
A0  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
2
NC  
3
A20  
A18  
A17  
A16  
A15  
OE  
A1  
4
A2  
5
A3  
6
A
B
C
D
E
F
NC  
NC  
OE  
NC  
NC  
NC  
NC  
NC  
A19  
A8  
A0  
A3  
A1  
A4  
A2  
CE  
NC  
I/O0  
I/O2  
A4  
7
CE  
8
I/O0  
I/O1  
VDD  
GND  
I/O2  
I/O3  
WE  
A5  
9
I/O7  
I/O6  
GND  
VDD  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
A19  
NC  
NC  
A5  
A6  
I/O1  
I/O3  
I/O4  
I/O5  
WE  
A11  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
GND  
A17  
NC  
A14  
A12  
A9  
A7  
VDD  
VDD  
A16  
A15  
A13  
A10  
GND  
I/O6  
I/O7  
A20  
NC  
NC  
G
H
A6  
A18  
A7  
A8  
A9  
NC  
NC  
NC  
PIN DESCRIPTIONS  
A0-A20 Address Inputs  
CEꢀꢀ  
ChipꢀEnableꢀInput  
OEꢀꢀ  
OutputꢀEnableꢀInputꢀ  
WriteꢀEnableꢀInput  
DataꢀInputꢀ/ꢀOutput  
Power  
WEꢀꢀ  
I/O0-I/O7  
Vdd  
GNDꢀ  
NC  
Ground  
No Connection  
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
TRUTH TABLE  
Mode  
WE  
CE OE I/O Operation VDD Current  
NotꢀSelectedꢀ Xꢀ  
Hꢀ  
Xꢀ  
High-Zꢀ  
Isb1, Isb2  
(Power-down)  
OutputꢀDisabledꢀHꢀ  
Lꢀ  
Lꢀ  
Lꢀ  
Hꢀ  
Lꢀ  
High-Zꢀ  
dout  
dIn  
Icc  
Icc  
Icc  
Readꢀ  
Writeꢀ  
Hꢀ  
Lꢀ  
Xꢀ  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
Unit  
V
V
°C  
W
Vterm  
Vdd  
TerminalꢀVoltageꢀwithꢀRespectꢀtoꢀGNDꢀ  
VddꢀRelatesꢀtoꢀGNDꢀ  
–0.5ꢀtoꢀVdd + 0.5  
–0.3ꢀtoꢀ4.0ꢀ  
–65ꢀtoꢀ+150ꢀ  
1.0ꢀ  
tstg  
Pt  
StorageꢀTemperatureꢀ  
PowerꢀDissipationꢀ  
Notes:  
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀpermanentꢀdamageꢀtoꢀ  
theꢀdevice.Thisꢀisꢀaꢀstressꢀratingꢀonlyꢀandꢀfunctionalꢀoperationꢀofꢀtheꢀdeviceꢀatꢀtheseꢀorꢀanyꢀotherꢀconditionsꢀ  
aboveꢀthoseꢀindicatedꢀinꢀtheꢀoperationalꢀsectionsꢀofꢀthisꢀspecificationꢀisꢀnotꢀimplied.ꢀExposureꢀtoꢀabsoluteꢀ  
maximum rating conditions for extended periods may affect reliability.  
CAPACITANCE(1,2)  
Symbol  
cIn  
Parameter  
Conditions  
VIn = 0V  
Max.  
6ꢀ  
Unit  
pF  
Input Capacitance  
Input/OutputꢀCapacitanceꢀ  
cI/oꢀ  
Vout = 0V  
8ꢀ  
pF  
Notes:  
1.ꢀꢀTestedꢀinitiallyꢀandꢀafterꢀanyꢀdesignꢀorꢀprocessꢀchangesꢀthatꢀmayꢀaffectꢀtheseꢀparameters.  
2.ꢀ Testꢀconditions:ꢀTa = 25°c, fꢀ=ꢀ1ꢀMHz,ꢀVdd = 3.3V.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
3
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
OPERATING RANGE (VDD) (IS61WV20488ALL)  
Range  
Ambient Temperature  
VDD (20 nS)  
1.65V-2.2V  
1.65V-2.2V  
1.65V-2.2V  
Commercialꢀ  
ꢀ Industrialꢀ  
ꢀ Automotiveꢀ  
0°Cꢀtoꢀ+70°Cꢀ  
–40°Cꢀtoꢀ+85°Cꢀ  
–40°Cꢀtoꢀ+125°Cꢀ  
OPERATING RANGE (VDD) (IS61WV20488BLL)(1)  
Range  
Ambient Temperature  
VDD (8 nS)  
3.3Vꢀ+ 5%  
3.3Vꢀ+ 5%  
VDD (10 nS)  
2.4V-3.6V  
2.4V-3.6V  
Commercialꢀ  
0°Cꢀtoꢀ+70°Cꢀ  
ꢀ Industrialꢀ  
–40°Cꢀtoꢀ+85°Cꢀ  
Note:  
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of  
3.3V + 5%, the device meets 8ns.  
OPERATING RANGE (VDD) (IS64WV20488BLL)  
Range  
Ambient Temperature  
VDD (10 nS)  
Automotiveꢀ  
–40°Cꢀtoꢀ+125°Cꢀ  
2.4V-3.6V  
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 3.3V + 5%  
Symbol Parameter  
Test Conditions  
Vdd = Min.,ꢀIoh = –4.0 mA  
Vdd = Min.,ꢀIol = 8.0 mA  
Min.  
2.4  
2
–0.3  
–1  
Max.  
0.4  
Unit  
V
V
V
V
Voh  
Vol  
VIh  
VIl  
IlI  
OutputꢀHIGHꢀVoltageꢀ  
OutputꢀLOWꢀVoltageꢀ  
Input HIGH Voltage  
InputꢀLOWꢀVoltage(1)  
InputꢀLeakageꢀ  
Vdd + 0.3  
0.8  
1
1ꢀ  
GNDꢀVIn Vdd  
GNDꢀVout Vdd, OutputsꢀDisabledꢀ  
µA  
µA  
Ilo  
OutputꢀLeakage  
–1ꢀ  
Note:  
1. VIl (min.) = –0.3VꢀDC;ꢀVIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.  
Ih (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.  
V
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 2.4V-3.6V  
Symbol Parameter  
Test Conditions  
Min.  
1.8  
Max.  
Unit  
V
Voh  
Vol  
VIh  
VIl  
IlI  
OutputꢀHIGHꢀVoltageꢀ  
Vdd = Min.,ꢀIoh = –1.0 mA  
Vdd = Min.,ꢀIol = 1.0 mA  
OutputꢀLOWꢀVoltageꢀ  
Input HIGH Voltage  
InputꢀLOWꢀVoltage(1)  
InputꢀLeakageꢀ  
0.4  
V
2.0  
–0.3  
–1  
Vdd + 0.3  
V
0.8  
1
V
GNDꢀVIn Vdd  
µA  
µA  
Ilo  
OutputꢀLeakage  
GNDꢀVout Vdd, OutputsꢀDisabledꢀ  
–1ꢀ  
1ꢀ  
Note:  
1. VIl (min.) = –0.3VꢀDC;ꢀVIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.  
Ih (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.  
V
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 1.65V-2.2V  
Symbol Parameter  
Test Conditions  
Ioh = -0.1 mA  
Iol = 0.1 mA  
VDD  
Min.  
1.4  
Max.  
Unit  
V
Voh  
Vol  
VIh  
OutputꢀHIGHꢀVoltageꢀ  
1.65-2.2V  
1.65-2.2V  
1.65-2.2V  
1.65-2.2V  
OutputꢀLOWꢀVoltageꢀ  
Input HIGH Voltage  
InputꢀLOWꢀVoltage  
InputꢀLeakageꢀ  
0.2  
V
1.4  
–0.2  
–1  
Vdd + 0.2  
V
(1)  
VIl  
IlI  
0.4  
1
V
GNDꢀVIn Vdd  
µA  
µA  
Ilo  
OutputꢀLeakage  
GNDꢀVout Vdd, OutputsꢀDisabledꢀ  
–1ꢀ  
1ꢀ  
Note:  
1. VIl (min.) = –0.3VꢀDC;ꢀVIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.  
Ih (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.  
V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
5
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
AC TEST CONDITIONS (HIGH SPEED)  
Parameter  
Unit  
Unit  
Unit  
(2.4V-3.6V)  
(3.3V + 5%)  
(1.65V-2.2V)  
InputꢀPulseꢀLevelꢀ  
InputꢀRiseꢀandꢀFallꢀTimesꢀ  
0.4VꢀtoꢀVdd-0.3V  
1.5nsꢀ  
0.4V to Vdd-0.3V  
1.5nsꢀ  
0.4V to Vdd-0.2V  
1.5ns  
InputꢀandꢀOutputꢀTimingꢀ  
andꢀReferenceꢀLevelꢀ(VRef)  
Vdd/2  
Vdd/2 + 0.05  
Vdd/2  
OutputꢀLoadꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2ꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2ꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2  
AC TEST LOADS  
319  
3.3V  
ZO = 50  
50Ω  
1.5V  
OUTPUT  
OUTPUT  
30 pF  
Including  
jig and  
scope  
353 Ω  
5 pF  
Including  
jig and  
scope  
Figure 1.  
Figure 2.  
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)  
-8  
-10  
-20  
Symbol Parameter  
Test Conditions  
Min.  
Max.  
Min. Max.  
Min. Max.  
Unit  
Icc  
VddꢀDynamicꢀOperatingꢀ Vdd = Max.,ꢀꢀ  
Com.ꢀ  
Ind.  
—ꢀ  
120ꢀ  
125  
—ꢀ  
95ꢀ  
100  
140  
—ꢀ  
90ꢀ  
100  
140  
mA  
Supply Current  
Iout = 0 mA, f = fmax  
Auto.  
typ.(2)  
60  
Icc1  
Operatingꢀ  
Supply Current  
Vdd = Max.,ꢀꢀ  
Iout = 0 mA, f = 0  
Com.ꢀ  
Ind.  
—ꢀ  
35ꢀ  
35  
—ꢀ  
30ꢀ  
40  
—ꢀ  
30ꢀ  
40  
mA  
ꢀ ꢀ  
Auto.ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
60ꢀ  
—ꢀ  
70ꢀ  
Isb1  
ꢀ ꢀ  
TTLꢀStandbyꢀCurrentꢀ  
(TTLꢀInputs)ꢀ  
Vdd = Max.,ꢀ  
VIn = VIh or VIl  
CE VIh,ꢀfꢀ=ꢀ0ꢀ  
Com.  
Ind.  
Auto.ꢀ  
—ꢀ  
30  
35  
—ꢀ  
—ꢀ  
30  
35  
70ꢀ  
—ꢀ  
30  
35  
70  
mA  
Isb2ꢀ  
ꢀ ꢀ  
CMOSꢀStandbyꢀ  
Currentꢀ(CMOSꢀInputs)ꢀ CE Vdd – 0.2V,  
VIn Vdd – 0.2V, orꢀ  
Vdd = Max.,ꢀ  
Com.  
Ind.  
—ꢀ  
20  
25  
—ꢀ  
—ꢀ  
20  
25  
70ꢀ  
15  
20  
70  
mA  
Auto.ꢀ  
VIn 0.2V, f = 0  
typ.(2)  
4
Note:  
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
2.ꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVddꢀ=ꢀ3.0V,Ta = 25oC and not 100% tested.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ  
7
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)  
-8  
-10  
Symbol  
Parameter  
Min. Max.  
Min. Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
t
t
t
t
t
t
t
t
t
t
rc  
ReadꢀCycleꢀTimeꢀ  
AddressꢀAccessꢀTimeꢀ  
OutputꢀHoldꢀTimeꢀ  
CEꢀAccessꢀTimeꢀ  
OEꢀAccessꢀTimeꢀ  
OEꢀtoꢀHigh-ZꢀOutputꢀ  
OEꢀtoꢀLow-ZꢀOutputꢀ  
CEꢀtoꢀHigh-ZꢀOutputꢀ  
CEꢀtoꢀLow-ZꢀOutputꢀ  
PowerꢀUpꢀTimeꢀ  
8ꢀ  
—ꢀ  
2ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
0ꢀ  
—ꢀ  
8ꢀ  
—ꢀ  
8ꢀ  
5.5ꢀ  
3ꢀ  
—ꢀ  
3ꢀ  
10ꢀ  
—ꢀ  
2ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
0ꢀ  
—ꢀ  
10ꢀ  
—ꢀ  
10ꢀ  
6.5ꢀ  
4ꢀ  
aaꢀ  
oha  
ace  
doe  
(2)  
hzoe  
(2)  
lzoe  
—ꢀ  
4ꢀ  
(2  
hzce  
0ꢀ  
0ꢀ  
(2)  
lzce  
3ꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
8ꢀ  
3ꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
10ꢀ  
Pu  
Pd  
PowerꢀDownꢀTimeꢀ  
—ꢀ  
Notes:  
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ3ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0Vꢀtoꢀ3.0Vꢀ  
andꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.  
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)  
-20 ns  
Symbol  
trcꢀ  
Parameter  
Min. Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ReadꢀCycleꢀTimeꢀ ꢀ  
AddressꢀAccessꢀTimeꢀ  
OutputꢀHoldꢀTimeꢀ ꢀ  
20ꢀ  
—ꢀ  
2.5ꢀ  
—ꢀ  
—ꢀ  
0ꢀ  
—ꢀ  
20ꢀ  
—ꢀ  
20ꢀ  
8ꢀ  
taaꢀ  
tohaꢀ  
tace  
CEꢀAccessꢀTimeꢀ  
OEꢀAccessꢀTimeꢀ  
tdoe  
(2)  
thzoe  
OEꢀtoꢀHigh-ZꢀOutputꢀ  
OEꢀtoꢀLow-ZꢀOutputꢀ  
CEꢀtoꢀHigh-ZꢀOutputꢀ  
CEꢀtoꢀLow-ZꢀOutputꢀ  
8ꢀ  
(2)  
tlzoe  
0ꢀ  
—ꢀ  
8ꢀ  
(2  
thzce  
0ꢀ  
(2)  
tlzce  
3ꢀ  
—ꢀ  
—ꢀ  
20ꢀ  
t
t
Pu  
PowerꢀUpꢀTimeꢀ  
0ꢀ  
Pdꢀ  
PowerꢀDownꢀTimeꢀ  
—ꢀ  
ns  
Notes:  
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ1.5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.25V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0.4Vꢀtoꢀ  
Vdd-0.3VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.  
3. Not 100% tested.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
9
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
AC WAVEFORMS  
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIl)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
t
OHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
READ1.eps  
READ CYCLE NO. 2(1,3) (CE and OE Controlled)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
OE  
CE  
t
HZOE  
t
DOE  
t
t
LZOE  
ACE  
t
HZCE  
t
LZCE  
HIGH-Z  
DOUT  
DATA VALID  
CE_RD2.eps  
Notes:  
1. WEꢀisꢀHIGHꢀforꢀaꢀReadꢀCycle.  
2.ꢀ Theꢀdeviceꢀisꢀcontinuouslyꢀselected.ꢀOE, CE = VIl.  
3. Address is valid prior to or coincident with CEꢀLOWꢀtransitions.  
10  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
0ꢀ  
0ꢀ  
                                                                                           
IS61WV20488ALL, IS61/64WV20488BLL  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverꢀOperatingꢀRange)  
-8  
-10  
Min.  
Symbol  
Parameter  
Min.  
8ꢀ  
Max.  
—ꢀ  
Max.  
—ꢀ  
Unit  
ns  
t
t
t
wc  
sce  
aw  
WriteꢀCycleꢀTimeꢀ  
CEꢀtoꢀWriteꢀEndꢀ  
10ꢀ  
8ꢀ  
6.5ꢀ  
6.5ꢀ  
—ꢀ  
—ꢀ  
ns  
AddressꢀSetupꢀTimeꢀꢀ  
toꢀWriteꢀEnd  
—ꢀ  
8ꢀ  
—ꢀ  
ns  
ꢀ ꢀ ꢀ  
t
t
t
t
t
t
t
t
ha  
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ  
AddressꢀSetupꢀTimeꢀ  
0ꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
0ꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
saꢀ  
Pwe  
1
2
WE Pulse Width (OE = HIGH)  
WE Pulse Width (OEꢀ=ꢀLOW)ꢀ  
DataꢀSetupꢀtoꢀWriteꢀEndꢀ  
DataꢀHoldꢀfromꢀWriteꢀEndꢀ  
WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ  
WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ  
6.5  
8.0ꢀ  
5ꢀ  
8
Pwe  
—ꢀ  
—ꢀ  
—ꢀ  
3.5ꢀ  
—ꢀ  
10ꢀ  
6ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
5ꢀ  
sd  
hd  
hzwe  
(2)  
(2)  
—ꢀ  
2ꢀ  
—ꢀ  
2ꢀ  
lzwe  
—ꢀ  
Notes:  
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ3ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0Vꢀtoꢀ3.0Vꢀ  
andꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.  
3.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀLOWꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀinitiateꢀaꢀ  
Write,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀrisingꢀ  
or falling edge of the signal that terminates the write. Shaded area product in development  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
11  
Rev. C  
06/23/2014  
thdꢀ  
0ꢀ  
ꢀ ns  
                                                                 
IS61WV20488ALL, IS61/64WV20488BLL  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverꢀOperatingꢀRange)  
-20 ns  
Symbol  
twcꢀ  
Parameter  
Min. Max.  
Unit  
ꢀ ns  
ꢀ ns  
ꢀ ns  
WriteꢀCycleꢀTimeꢀ  
CEꢀtoꢀWriteꢀEndꢀ  
20ꢀ  
12ꢀ  
12ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
tsce  
tawꢀ  
ꢀ ꢀ ꢀ  
AddressꢀSetupꢀTimeꢀꢀ  
toꢀWriteꢀEnd  
thaꢀ  
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ  
AddressꢀSetupꢀTimeꢀ  
WE Pulse Width (OE = HIGH)  
WE Pulse Width (OEꢀ=ꢀLOW)ꢀꢀ  
0ꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
ꢀ ns  
ꢀ ns  
ns  
tsaꢀ  
tPwe1  
tPwe2  
tsdꢀ  
12  
17ꢀ  
9ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
9ꢀ  
ꢀ ns  
ꢀ ns  
DataꢀSetupꢀtoꢀWriteꢀEndꢀ  
DataꢀHoldꢀfromꢀWriteꢀEndꢀ  
WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ  
WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ  
(3)  
thzwe  
—ꢀ  
3ꢀ  
ꢀ ns  
ꢀ ns  
(3)  
tlzwe  
—ꢀ  
Notes:  
1.ꢀ Test conditions assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input  
pulse levels of 0.4V to Vdd-0.3VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀ  
tested.  
3.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀLOWꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀ  
statesꢀtoꢀinitiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀ  
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.  
12  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
AC WAVEFORMS  
WRITE CYCLE NO. 1(1,2) (CE Controlled, OEꢀ=ꢀHIGHꢀorꢀLOW)  
t
WC  
VALID ADDRESS  
SCE  
ADDRESS  
t
SA  
t
t
HA  
CE  
t
AW  
t
tPPWWEE21  
WE  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR1.eps  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
13  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
AC WAVEFORMS  
WRITE CYCLE NO. 2(1,2) (WE Controlled: OEꢀisꢀHIGHꢀDuringꢀWriteꢀCycle)  
t
WC  
ADDRESS  
VALID ADDRESS  
t
HA  
OE  
LOW  
CE  
t
AW  
t
PWE1  
WE  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR2.eps  
Notes:  
1.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀLOWꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀinitiateꢀaꢀWrite,ꢀ  
butꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀrisingꢀorꢀfallingꢀ  
edge of the signal that terminates the Write.  
2.ꢀ I/OꢀwillꢀassumeꢀtheꢀHigh-ZꢀstateꢀifꢀOE > VIh.  
14  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
AC WAVEFORMS  
WRITE CYCLE NO. 3 (WE Controlled: OEꢀisꢀLOWꢀDuringꢀWriteꢀCycle)  
t
WC  
ADDRESS  
VALID ADDRESS  
t
HA  
LOW  
LOW  
OE  
CE  
t
t
AW  
t
PWE2  
WE  
t
SA  
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR3.eps  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
15  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol  
Vdr  
Idrꢀ  
Parameter  
Test Condition  
Min.  
Max.  
Unit  
V
VddꢀforꢀDataꢀRetentionꢀ  
DataꢀRetentionꢀCurrentꢀ  
SeeꢀDataꢀRetentionꢀWaveformꢀ  
Vdd = 1.2V, CE Vdd – 0.2V  
1.2ꢀ  
3.6ꢀ  
Ind.  
25  
60  
3
mA  
Auto.  
typ.(1)  
tsdr  
trdr  
DataꢀRetentionꢀSetupꢀTimeꢀ  
RecoveryꢀTimeꢀ  
SeeꢀDataꢀRetentionꢀWaveformꢀ  
SeeꢀDataꢀRetentionꢀWaveformꢀ  
0ꢀ  
—ꢀ  
ns  
trc  
ns  
Note:  
1.ꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVddꢀ=ꢀ3.0V,Ta = 25oC and not 100% tested.  
DATA RETENTION WAVEFORM (CE Controlled)  
t
SDR  
Data Retention Mode  
tRDR  
VDD  
1.65V  
1.4V  
VDR  
CE VDD - 0.2V  
CE  
GND  
16  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
ORDERING INFORMATION  
Industrial Range: -40°C to +85°C  
Voltage Range: 2.4V to 3.6V  
Speed (ns)  
10 (81)ꢀ  
Order Part No.  
IS61WV20488BLL-10MIꢀ 48ꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm)ꢀꢀ  
IS61WV20488BLL-10MLIꢀ 48ꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm),ꢀLead-free  
IS61WV20488BLL-10TIꢀ TSOPꢀ(TypeꢀII)ꢀ  
IS61WV20488BLL-10TLIꢀ TSOPꢀ(TypeꢀII),ꢀLead-free  
Package  
Note:  
1. Speed = 8ns for Vdd = 3.3V + 5%. Speed = 10ns for Vdd = 2.4V to 3.3V.  
Industrial Range: -40°C to +85°C  
Voltage Range: 1.65V to 2.2V  
Speed (ns)  
Order Part No.  
IS61WV20488ALL-20MIꢀ 48ꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm)ꢀꢀ  
IS61WV20488ALL-20TIꢀ TSOPꢀ(TypeꢀII)ꢀ  
Package  
20ꢀ  
Automotive Range: -40°C to +125°C  
Voltage Range: 2.4V to 3.6V  
Speed (ns)  
Order Part No.  
Package  
48 mini BGA (9mm x 11mm)  
48ꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm),ꢀLead-free  
10  
IS64WV20488BLL-10MA3  
IS64WV20488BLL-10MLA3  
IS64WV20488BLL-10CTLA3 TSOPꢀ(TypeꢀII),ꢀCopperꢀLeadframe,ꢀLeadfree  
IS64WV20488BLL-10CTA3 TSOPꢀ(TypeꢀII),ꢀCopperꢀLeadframe  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ  
17  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
18  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
06/23/2014  
IS61WV20488ALL, IS61/64WV20488BLL  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
19  
Rev. C  
06/23/2014  

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