IS61C1024AL-12TI-TR [ISSI]
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32;
| 型号： | IS61C1024AL-12TI-TR |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | Standard SRAM, 128KX8, 12ns, CMOS, PDSO32 静态存储器 光电二极管 |
| 文件： | 总15页 (文件大小：839K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Enableꢀinputs,ꢀCE1ꢀandꢀCE2.
TheꢀactiveꢀLOWWriteꢀEnableꢀ
IS61C1024AL
IS64C1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
NOVEMBER 2011
DESCRIPTION
FEATURES
Theꢀ ISSIꢀ IS61C1024AL/IS64C1024ALꢀ isꢀ aꢀ veryꢀ high-
speed,ꢀ lowꢀ power,ꢀ 131,072-wordꢀ byꢀ 8-bitꢀ CMOSꢀ staticꢀ
RAMs.ꢀTheyꢀareꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ
CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ
withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ higherꢀ
performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.
•ꢀ High-speedꢀaccessꢀtime:ꢀ12,ꢀ15ꢀnsꢀ
• Lowꢀactiveꢀpower:ꢀ160ꢀmWꢀ(typical)
• Lowꢀstandbyꢀpower:ꢀ1000ꢀµWꢀ(typical)ꢀCMOSꢀ
standby
•ꢀ OutputꢀEnableꢀ(OE)ꢀandꢀtwoꢀChipꢀEnableꢀ
(CE1ꢀandꢀCE2)ꢀinputsꢀforꢀeaseꢀinꢀapplications
WhenꢀCE1ꢀisꢀHIGHꢀorꢀCE2ꢀisꢀLOWꢀ(deselected),ꢀtheꢀdeviceꢀ
assumesꢀaꢀstandbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀ
canꢀbeꢀreducedꢀbyꢀusingꢀCMOSꢀinputꢀlevels.
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ
required
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀtwoꢀChipꢀ
•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs
•ꢀ Singleꢀ5Vꢀ( 10ꢁ)ꢀpowerꢀsupply
(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀmemory.
•ꢀ Commercial,ꢀindustrial,ꢀandꢀautomotiveꢀtempera-
tureꢀrangesꢀavailable
Theꢀ IS61C1024AL/IS64C1024ALꢀ isꢀ availableꢀ inꢀ 32-pinꢀ
300-milꢀSOJ,ꢀ32-pinꢀ400-milꢀSOJ,ꢀ32-pinꢀTSOPꢀ(TypeꢀI,ꢀ
8x20),ꢀandꢀ32-pinꢀsTSOPꢀ(TypeꢀI,ꢀ8ꢀxꢀ13.4)ꢀpackages.
•ꢀ Leadꢀfreeꢀavailable
FUNCTIONAL BLOCK DIAGRAM
128K x 8
MEMORY ARRAY
A0-A16
DECODER
VDD
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE1
CONTROL
CIRCUIT
CE2
OE
WE
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ
notice.ꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlatestꢀ
versionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
1
Rev. C
11/22/2011
I/O0-I/O7
VDDꢀ
IS61C1024AL, IS64C1024AL
PIN CONFIGURATION
32-Pin SOJ
PIN CONFIGURATION
32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)
NC
A16
A14
A12
A7
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VDD
A15
CE2
WE
A13
A8
A11
A9
A8
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
2
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
3
4
A13
WE
CE2
A15
VDD
NC
A16
A14
A12
A7
5
A6
6
A5
7
A9
A4
8
A11
OE
A3
9
9
A2
10
11
12
13
14
15
16
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
10
11
12
13
14
15
16
A1
A0
I/O0
I/O1
I/O2
GND
A6
A5
A4
A1
A2
A3
PIN DESCRIPTIONS
A0-A16ꢀ AddressꢀInputs
CE1ꢀꢀ
CE2ꢀꢀ
OEꢀꢀ
ChipꢀEnableꢀ1ꢀInputꢀ
ChipꢀEnableꢀ2ꢀInputꢀ
OutputꢀEnableꢀInput
WriteꢀEnableꢀInput
Input/Output
Power
WEꢀꢀ
OPERATING RANGE (IS61C1024AL)
Range
Commercialꢀ 0°Cꢀtoꢀ+70°Cꢀ
Industrialꢀ -40°Cꢀtoꢀ+85°Cꢀ
Ambient Temperature
Vdd
5Vꢀ ꢀ10ꢁ
5Vꢀ ꢀ10ꢁ
GNDꢀ
Ground
ꢀ
OPERATING RANGE (IS64C1024AL)
Range
Ambient Temperature
Vdd
Automotiveꢀ -40°Cꢀtoꢀ+125°Cꢀ
5Vꢀ ꢀ10ꢁ
TRUTH TABLE
Mode
WE
CE1 CE2 OEꢀ
I/O Operation
Vdd Current
NotꢀSelectedꢀ
(Power-down)ꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
ꢀ High-Zꢀꢀꢀ
ꢀ High-Z
Isb1, Isb2
Isb1, Isb2ꢀ
ꢀ
ꢀ
ꢀ
OutputꢀDisabledꢀ Hꢀ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Lꢀ
Xꢀ
ꢀ High-Zꢀ
Doutꢀ
Icc1, Icc2ꢀ
Icc1, Icc2ꢀ
Icc1, Icc2ꢀ
Readꢀ
Writeꢀ
Hꢀ
Lꢀ
DInꢀ
2ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
–0.5ꢀtoꢀ+7.0ꢀ
–65ꢀtoꢀ+150ꢀ
1.5ꢀ
Unit
V
°C
Vterm
ꢀ tstg
ꢀ Pt
TerminalꢀVoltageꢀwithꢀRespectꢀtoꢀGNDꢀ
StorageꢀTemperatureꢀ
PowerꢀDissipationꢀ
W
ꢀ Ioutꢀ
DCꢀOutputꢀCurrentꢀ(LOW)ꢀ
20ꢀ
mAꢀ
Notes:
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀ
permanentꢀdamageꢀtoꢀtheꢀdevice.ꢀThisꢀisꢀaꢀstressꢀratingꢀonlyꢀandꢀfunctionalꢀoperationꢀ
ofꢀtheꢀdeviceꢀatꢀtheseꢀorꢀanyꢀotherꢀconditionsꢀaboveꢀthoseꢀindicatedꢀinꢀtheꢀoperationalꢀ
sectionsꢀofꢀthisꢀspecificationꢀisꢀnotꢀimplied.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀcon-
ditionsꢀforꢀextendedꢀperiodsꢀmayꢀaffectꢀreliability.ꢀ
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
VIn = 0V
Max.
5ꢀ
Unit
pF
cIn
InputꢀCapacitanceꢀ
OutputꢀCapacitanceꢀ
ꢀ coutꢀ
Notes:
Vout = 0V
7ꢀ
pF
1.ꢀꢀTestedꢀinitiallyꢀandꢀafterꢀanyꢀdesignꢀorꢀprocessꢀchangesꢀthatꢀmayꢀaffectꢀtheseꢀparameters.
2.ꢀ Testꢀconditions:ꢀTa = 25°c, fꢀ=ꢀ1ꢀMHz,ꢀVDDꢀ=ꢀ5.0V.
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)
Symbol Parameter
Test Conditions
Min.
Max.
—ꢀ
Unit
V
Voh
ꢀ Vol
ꢀ VIh
ꢀ VIl
ꢀ IlI
OutputꢀHIGHꢀVoltageꢀ
VDD = Min.,ꢀIoh = –4.0ꢀmAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2.4ꢀ
—ꢀ
OutputꢀLOWꢀVoltageꢀ
InputꢀHIGHꢀVoltageꢀ
InputꢀLOWꢀVoltage(1)ꢀ
VDD = Min.,ꢀIol = 8.0ꢀmAꢀ
0.4ꢀ
V
ꢀ
ꢀ
2.2ꢀ
–0.3ꢀ
VDD + 0.5
0.8ꢀ
V
V
ꢀ
InputꢀLeakageꢀ
GNDꢀ≤ꢀVIn ≤ VDD
Com.ꢀ
Ind.ꢀ
Auto.ꢀ
–1ꢀ
–2ꢀ
–5ꢀ
1ꢀ
2ꢀ
5ꢀ
µAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ Ilo
OutputꢀLeakageꢀ
ꢀ
ꢀ
GNDꢀ≤ꢀVout ≤ VDDꢀ
OutputsꢀDisabledꢀ
ꢀ
Com.ꢀ
Ind.ꢀ
Auto.ꢀ
–1ꢀ
–2ꢀ
–5ꢀ
1ꢀ
2ꢀ
5
µAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Note:
1.ꢀꢀVIl = –3.0Vꢀforꢀpulseꢀwidthꢀlessꢀthanꢀ10ꢀns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
3
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
IS61C1024AL/IS64C1024AL POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
-12 ns
Min.
-15 ns
Min. Max.
Symbol Parameter
VDDꢀOperatingꢀ
Test Conditions
Max.
Unit
Icc1
VDD = VDD max.,ꢀCE1ꢀ=ꢀVIlꢀ
Iout = 0 mA,ꢀfꢀ=ꢀ0ꢀ
ꢀ
Com.ꢀ ꢀ ꢀ
Ind.ꢀ ꢀ ꢀ
Auto.ꢀ ꢀ ꢀ
—ꢀ
—ꢀ
ꢀ
35ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
—ꢀ
ꢀ
ꢀ
45ꢀ
mA
ꢀ ꢀ
ꢀ
ꢀ ꢀ
SupplyꢀCurrentꢀ
40
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
ꢀ Icc2
ꢀ ꢀ
ꢀ ꢀ
VDDꢀDynamicꢀOperatingꢀ
SupplyꢀCurrentꢀ
ꢀ
ꢀ
VDD = VDD max.,ꢀCE1ꢀ=ꢀVIl
Iout = 0 mA,ꢀfꢀ=ꢀfmax
ꢀ
ꢀ
Com.ꢀ ꢀ ꢀ
Ind.ꢀ ꢀ ꢀ
—ꢀ
—ꢀ
ꢀ
45ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
—ꢀ
ꢀ
ꢀ
55ꢀ
mA
ꢀ ꢀ
ꢀ
50
ꢀ
ꢀ
Auto.ꢀ ꢀ ꢀ
ꢀ
ꢀ ꢀ
typ.(2)ꢀ ꢀ ꢀ
—ꢀ
32ꢀ
ꢀ Isb1
ꢀ ꢀ
TTLꢀStandbyꢀCurrentꢀ
(TTLꢀInputs)ꢀ
VDD = VDD max.,ꢀ
VIn = VIh orꢀVIl
Com.
Ind.
—
—
1
1.5
ꢀ
ꢀ
mA
ꢀ
ꢀ
CE1ꢀ≥ꢀVIh,ꢀfꢀ=ꢀ0ꢀorꢀ
CE2ꢀ≤ꢀVIl,ꢀfꢀ=ꢀ0ꢀ
Auto.
—
2
ꢀ ꢀ
ꢀ Isb2ꢀ
ꢀ ꢀ
CMOSꢀStandbyꢀ
Currentꢀ(CMOSꢀInputs)ꢀ
VDD = VDD max.,ꢀ
Com.
Ind.
—
—
400
450
ꢀ
ꢀ
µA
CE1ꢀ≥ꢀVDD – 0.2V,
ce2
≤
0.2V
Auto.
—
500
VIn ≥ VDD – 0.2V, orꢀ
VIn 0.2V, ꢀfꢀ=ꢀ0
typ.(2)ꢀ ꢀ ꢀ
—ꢀ
200
ꢀ ꢀ
ꢀ
≤
Note:
1.ꢀꢀAtꢀfꢀ=ꢀfmax,ꢀaddressꢀandꢀdataꢀinputsꢀareꢀcyclingꢀatꢀtheꢀmaximumꢀfrequency,ꢀfꢀ=ꢀ0ꢀmeansꢀnoꢀinputꢀlinesꢀchange.
ꢀ ꢀ 2.ꢀꢀTypicalꢀValuesꢀareꢀmeasuredꢀatꢀVDDꢀ=ꢀ5V,ꢀTa =ꢀ25oCꢀandꢀnotꢀ100ꢁꢀtested.
4ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
-12
-15
Symbol
ꢀ ꢀ trcꢀ
ꢀ ꢀ taaꢀ
Parameter
Min. Max.
Min. Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ReadꢀCycleꢀTimeꢀ
AddressꢀAccessꢀTimeꢀ
OutputꢀHoldꢀTimeꢀ
CE1ꢀAccessꢀTimeꢀ
CE2ꢀAccessꢀTimeꢀ
OEꢀAccessꢀTimeꢀ
OEꢀtoꢀLow-ZꢀOutputꢀ
OEꢀtoꢀHigh-ZꢀOutputꢀ
CE1ꢀtoꢀLow-ZꢀOutputꢀ
CE2ꢀtoꢀLow-ZꢀOutputꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
12ꢀ
—ꢀ
3ꢀ
—ꢀ
12ꢀ
—ꢀ
12ꢀ
12ꢀ
6ꢀ
15ꢀ
—ꢀ
3ꢀ
—ꢀ
15ꢀ
—ꢀ
15ꢀ
15ꢀ
7ꢀ
ꢀ ꢀ tohaꢀ
ꢀ ꢀ tace1ꢀ
ꢀ ꢀ tace2ꢀ
ꢀ ꢀ tDoeꢀ
—ꢀ
—ꢀ
—ꢀ
0ꢀ
—ꢀ
—ꢀ
—ꢀ
0ꢀ
(2)
ꢀ ꢀ tlzoe ꢀ
—ꢀ
6ꢀ
—ꢀ
6ꢀ
(2)
ꢀ ꢀ thzoe ꢀ
0ꢀ
0ꢀ
ꢀ ꢀ tlzce1(2)ꢀ
ꢀ ꢀ tlzce2(2)ꢀ
2ꢀ
—ꢀ
—ꢀ
7ꢀ
2ꢀ
—ꢀ
—ꢀ
8ꢀ
2ꢀ
2ꢀ
(2)
ꢀ ꢀ thzce ꢀ
CE1ꢀorꢀCE2ꢀtoꢀHigh-ZꢀOutputꢀ ꢀ
0ꢀ
0ꢀ
(3)
ꢀ ꢀ tPu ꢀ
CE1ꢀorꢀCE2ꢀtoꢀPower-Upꢀ
ꢀ
ꢀ
0ꢀ
—ꢀ
12ꢀ
0ꢀ
—ꢀ
12ꢀ
(3)
ꢀ ꢀ tPD ꢀ
CE1ꢀorꢀCE2ꢀtoꢀPower-Downꢀ
—ꢀ
—ꢀ
Notes:ꢀ
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ3ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀ
ofꢀ0ꢀtoꢀ3.0VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ 500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100ꢁꢀtested.
3.ꢀ Notꢀ100ꢁꢀtested.
AC TEST CONDITIONS
Parameter
InputꢀPulseꢀLevelꢀ
InputꢀRiseꢀandꢀFallꢀTimesꢀ
Unit
0Vꢀtoꢀ3.0V
3ꢀns
ꢀ
ꢀ
ꢀ
InputꢀandꢀOutputꢀTimingꢀ
andꢀReferenceꢀLevel
1.5Vꢀ
ꢀ
OutputꢀLoadꢀ
SeeꢀFiguresꢀ1ꢀandꢀ2
AC TEST LOADS
480 Ω
480 Ω
5V
5V
OUTPUT
OUTPUT
255 Ω
255 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
5
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
DOUT
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t
RC
ADDRESS
OE
t
AA
t
OHA
t
HZOE
t
DOE
LZOE
t
CE1
CE2
t
tAACCEE21
t
tHHZZCCEE21
tLLZZCCEE21
t
HIGH-Z
DOUT
DATA VALID
CE2_RD2.eps
Notes:ꢀ
1.ꢀ WEꢀisꢀHIGHꢀforꢀaꢀReadꢀCycle.
2.ꢀ Theꢀdeviceꢀisꢀcontinuouslyꢀselected.ꢀOE,ꢀCE1ꢀ=ꢀVIl,ꢀCE2ꢀ=ꢀVIh.
3.ꢀ AddressꢀisꢀvalidꢀpriorꢀtoꢀorꢀcoincidentꢀwithꢀCE1ꢀLOWꢀandꢀCE2ꢀHIGHꢀtransitions.
6ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverꢀOperatingꢀRange,ꢀStandardꢀandꢀLowꢀPower)
-12 ns
-15 ns
Symbol
ꢀ ꢀ twcꢀ
ꢀ ꢀ tsce1
ꢀ ꢀ tsce2ꢀ
ꢀ ꢀ tawꢀ
Parameter
Min. Max.
Min. Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WriteꢀCycleꢀTimeꢀ
CE1ꢀtoꢀWriteꢀEndꢀ
CE2ꢀtoꢀWriteꢀEndꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
12ꢀ
10ꢀ
10ꢀ
10ꢀ
0ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
7ꢀ
15ꢀ
12ꢀ
12ꢀ
12ꢀ
0ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
7ꢀ
AddressꢀSetupꢀTimeꢀtoꢀWriteꢀEndꢀ
ꢀ ꢀ thaꢀ
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ tsaꢀ
AddressꢀSetupꢀTimeꢀ
ꢀ
ꢀ
0ꢀ
0ꢀ
(3)
ꢀ ꢀ tPwe ꢀ
WEꢀPulseꢀWidthꢀ
10ꢀ
7ꢀ
12ꢀ
10ꢀ
0ꢀ
ꢀ ꢀ tsDꢀ
ꢀ ꢀ thDꢀ
DataꢀSetupꢀtoꢀWriteꢀEndꢀ ꢀ
DataꢀHoldꢀfromꢀWriteꢀEndꢀꢀ
WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ
WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ
0ꢀ
(4)
ꢀ ꢀ thzwe ꢀ
—ꢀ
2ꢀ
—ꢀ
2ꢀ
(4)
ꢀ ꢀ tlzwe ꢀ
—ꢀ
—ꢀ
Notes:ꢀ
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0ꢀtoꢀ3.0Vꢀandꢀ
outputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.
2.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCE1ꢀLOW,ꢀCE2ꢀHIGHꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀ
initiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀ
risingꢀorꢀfallingꢀedgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀWrite.
3.ꢀ TestedꢀwithꢀOEꢀHIGH.
4.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ 500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100ꢁꢀtested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
7
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
AC WAVEFORMS
WRITE CYCLE NO. 1ꢀ(CE1ꢀControlled,ꢀOEꢀisꢀHIGHꢀorꢀLOW)ꢀ(1ꢀ)
t
WC
VALID ADDRESS
ADDRESS
CE1
t
tSSCCEE21
t
SA
t
HA
CE2
t
AW
t
tPPWWEE21
WE
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
CE2_WR1.eps
WRITE CYCLE NO. 2ꢀ(OE isꢀHIGHꢀDuringꢀWriteꢀCycle)ꢀ(1,2)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
LOW
HIGH
CE1
CE2
t
AW
t
PWE1
WE
t
HZWE
t
LZWE
t
SA
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
CE2_WR2.eps
Notes:ꢀ
1.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCE1ꢀLOW,ꢀCE2ꢀHIGHꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀ
initiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀ
theꢀrisingꢀorꢀfallingꢀedgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀWrite.
2.ꢀ I/OꢀwillꢀassumeꢀtheꢀHigh-ZꢀstateꢀifꢀOEꢀ=ꢀVIh.
8ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
WRITE CYCLE NO. 3ꢀ(OE isꢀLOWꢀDuringꢀWriteꢀCycle)ꢀ(1)
t
WC
ADDRESS
VALID ADDRESS
t
HA
LOW
OE
CE1
LOW
HIGH
CE2
t
t
AW
t
PWE2
WE
t
SA
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
CE2_WR3.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
9
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
ꢀ ꢀ VDr DDꢀforꢀDataꢀRetentionꢀ
Test Condition
Min. Typ.(1)
Max. Unit
ꢀ
V
SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
2.0ꢀ
ꢀ
5.5ꢀ
V
ꢀ ꢀ IDr
ꢀ ꢀ ꢀ
ꢀ
DataꢀRetentionꢀCurrentꢀ
ꢀ
V
DDꢀ=ꢀ2.0V,ꢀCE1ꢀ≥ꢀVDDꢀ–ꢀ0.2Vꢀ
Com.ꢀ
Ind.ꢀ
—ꢀ
—ꢀ
200ꢀ
—ꢀ
400ꢀ
450ꢀ
µA
orꢀCE2ꢀ≤ 0.2V
ꢀ
ꢀ ꢀ ꢀ
ꢀ
VIn ≥ VDD – 0.2V,ꢀorꢀVIn
≤
Vss + 0.2V
Auto.ꢀ
—ꢀ
0ꢀ
—ꢀ
500
—ꢀ
ꢀ ꢀ tsDr
DataꢀRetentionꢀSetupꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
RecoveryꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ns
ns
ꢀ ꢀ trDr
t
rcꢀ
—ꢀ
Note:
ꢀ 1.ꢀTypicalꢀValuesꢀareꢀmeasuredꢀatꢀVDDꢀ=ꢀ5V,ꢀT
=ꢀ25oCꢀandꢀnotꢀ100ꢁꢀtested.
a
DATA RETENTION WAVEFORM (CE1 Controlled)
t
Data Retention Mode
t
RDR
SDR
VDD
4.5V
2.2V
V
DR
CE1 ≥ VDD - 0.2V
CE1
GND
DATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention Mode
VDD
CE2
4.5V
2.2V
t
t
RDR
SDR
V
DR
CE2 ≤ 0.2V
0.4V
GND
10ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
ORDERING INFORMATION: IS61C1024AL
Commercial Range: 0°C to +70°C
Speed (ns)
Order Part No.
Package
ꢀ
ꢀ
12ꢀ
ꢀ
IS61C1024AL-12Jꢀ
IS61C1024AL-12Tꢀ
300-milꢀPlasticꢀSOJꢀ
TSOPꢀ(TypeꢀI)
ORDERING INFORMATION: IS61C1024AL
Industrial Range: –40°C to +85°C
Speed (ns)
Order Part No.
Package
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
12ꢀ
IS61C1024AL-12JIꢀ
IS61C1024AL-12JLIꢀ
IS61C1024AL-12KIꢀ
IS61C1024AL-12KLIꢀ
IS61C1024AL-12HIꢀ
IS61C1024AL-12HLIꢀ
IS61C1024AL-12TIꢀ
IS61C1024AL-12TLIꢀ
300-milꢀPlasticꢀSOJꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
300-milꢀPlasticꢀSOJ,ꢀLead-freeꢀ
400-milꢀPlasticꢀSOJꢀ
400-milꢀPlasticꢀSOJ,ꢀLead-freeꢀ
sTSOPꢀ(TypeꢀI)ꢀ
sTSOPꢀ(TypeꢀI),ꢀLead-freeꢀ
TSOPꢀ(TypeꢀI)ꢀ
TSOPꢀ(TypeꢀI),ꢀLead-free
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ORDERING INFORMATION: IS64C1024AL
Automotive Range: –40°C to +125°C
Speed (ns)
Order Part No.
Package
ꢀ
ꢀ
15ꢀ
ꢀ
IS64C1024AL-15KA3ꢀ
IS64C1024AL-15TA3ꢀ
400-milꢀPlasticꢀSOJꢀ
TSOPꢀ(TypeꢀI)
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
11
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
12ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
13
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
14ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
11/22/2011
IS61C1024AL, IS64C1024AL
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
15
Rev. C
11/22/2011
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