H11F2-SMT&R [ISOCOM]

Optocoupler - Transistor Output, 1 CHANNEL FET OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6;
H11F2-SMT&R
型号: H11F2-SMT&R
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

Optocoupler - Transistor Output, 1 CHANNEL FET OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6

输出元件 光电
文件: 总3页 (文件大小:331K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
H11F1, H11F2, H11F3  
PHOTON COUPLED BILATERAL  
ANALOG FET  
APPROVALS  
Dimensions in mm  
2.54  
l
ULrecognised,FileNo.E91231  
1
2
6
5
7.0  
6.0  
DESCRIPTION  
The H11F_ series are optically coupled isolators  
consisting of infrared light emitting diode and a  
symmetrical bilateral silicon photodetector. The  
detector is electrically isolated from the input and  
performs like an ideal isolated FET designed for  
distortion-free control of low level ac and dc  
analog signals.The H11F_ series are mounted in a  
standard 6pin dual in line plastic package.  
3
4
8.9  
max.  
8.3 max.  
5.1  
max.  
0.5  
min.  
3.9  
3.1  
15°  
Max  
0.25  
0.48  
FEATURES  
APPLICATIONS (cont.)  
As an Analog Signal Switch  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
l
Isolated sample and hold circuit  
Multiplexed, optically isolated A/D conversion  
l
As a remote variable resistor  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
l
l
l
l
100to 300MΩ  
99.9% Linearity  
15 pF Shunt Capacitance  
100GI/O Isolation Resistance  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
As an Analog Signal Switch  
l
l
l
l
Extremely low Offset Voltage  
60V pk-pk Signal Capability  
No Charge Injection or Latchup  
ton, toff 15µs  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
INPUT DIODE  
Forward Current  
Reverse Voltage  
Power Dissipation  
60mA  
6V  
100mW  
APPLICATIONS  
As a remote variable resistor  
l
l
l
Isolated variable attenuator  
Automatic gain control  
Active filter fine tuning / band switching  
OUTPUT TRANSISTOR  
Breakdown Voltage  
H11F1, H11F2  
H11F3  
OPTION G  
8.3 max  
OPTION SM  
SURFACEMOUNT  
±30V  
±15V  
Detector Current (continuous)  
Power Dissipation  
±100mA  
300mW  
1.2  
0.6  
1.4  
0.9  
POWER DISSIPATION  
0.26  
10.2  
9.5  
Total Power Dissipation  
350mW  
10.16  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
7/12/00  
DB91018AAS/A3  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
Reverse Voltage (VR)  
Reverse Current (IR)  
1.1  
1.75  
10  
V
V
µA  
IF = 16mA  
IR = 10µA  
VR = 5V  
5
Output  
(either  
polarity)  
Breakdown Voltage - V( BR )46 (Note 2)  
H11F1, H11F2  
30  
15  
V
V
nA  
I46 = 10µA,I = 0  
H11F3  
I = 10µA,IF = 0  
46  
Off-state Dark Current - I46  
50  
50  
V = 15V, IFF = 0,  
TA46= 25°C  
µA  
V = 15V, I = 0,  
TA46= 100°C F  
Off-state Resistance - r46  
Capacitance - C46  
300  
ΜΩ  
pF  
V46 = 15V, I = 0  
V46 = 0, IF =F0,  
f = 1 MHz  
15  
Coupled On-state Resistance - r46 (Note 2)  
H11F1  
200  
330  
470  
H11F2  
H11F3  
IF = 16mA, I46 = 100µA  
IF = 16mA, I64 = 100µA  
On-state Resistance - r64 (Note 2)  
H11F1  
H11F2  
H11F3  
200  
330  
470  
Input to Output Isolation Voltage VISO 5300  
7500  
V
See note 1  
See note 1  
VIO = 500V (note 1)  
VIO= 0, f =1MHz  
VRMS  
PK  
pF  
Input-output Isolation Resistance R  
1011  
Input-output Capacitance  
CIfSO  
2
Turn-on Time  
Turn-off Time  
Resistance, non-linearity and asymmetry  
ton  
toff  
25  
25  
0.1  
µs  
µs  
%
IF= 16mA, V46 = 5V,  
RL = 50Ω  
IF= 16mA, f = 1kHz  
I46= 25µA RMS  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
7/12/00  
DB91018-AAS/A3  
On-state Resistance vs. Ambient Temperature  
Forward Current vs. Ambient Temperature  
3
2
80  
70  
60  
50  
Normalized to  
IF = 16mA  
I46 = 25µA  
TA = 25 °C  
median  
device  
40  
30  
1
0.8  
observed  
range  
20  
0.6  
0.4  
10  
0
-50 -25  
0
25  
50  
75 100  
-30  
0
25  
50  
75  
100 125  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Region of Linear Resistance  
Normalized Off-state current vs.  
Ambient Temperature  
100  
10000  
1000  
100  
100  
40  
20  
maximum  
RMS voltage  
40  
20  
10  
10  
4
maximum  
RMS current  
4
Normalized to  
V46 = 15V  
IF = 0  
10  
2
0
2
0
TA = 25 °C  
1.0  
100  
1000  
10k  
100k  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
On-state resistance r (on) (Ω)  
Resistive non-linearity vs.  
D.C. Bias  
Input Current vs. Input Voltage  
100  
5
4
40  
20  
10  
-25°C  
TA = 75°C  
3
2
4
2
1
25°C  
I = 10µA RMS  
r46(on) = 200Ω  
1
0
0.4  
0.2  
0.1  
0
50 100 150 200 250 300 350  
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6  
Forward voltage VF (V)  
D.C. bias voltage V46 (mV)  
7/12/00  
DB91018-AAS/A3  

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