4N38AX-SM [ISOCOM]
暂无描述;型号: | 4N38AX-SM |
厂家: | ISOCOM COMPONENTS |
描述: | 暂无描述 晶体 光电 晶体管 光电晶体管 输出元件 |
文件: | 总3页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
4N38X, 4N38AX
4N38, 4N38A
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
Dimensions in mm
2.54
z
ULrecognised,FileNo.E91231
1
6
5
Package Code " GG "
7.0
6.0
2
3
'X'SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
4
z
z
1.2
3.0
- G form
7.62
6.62
7.62
0.26
-SMDapprovedtoCECC00802
CertifiedtoEN60950by :-
Nemko-CertificateNo.P01102464
4.0
3.0
13°
Max
0.5
3.35
0.5
DESCRIPTION
The4N38, 4N38A series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-55°Cto+150°C
-55°Cto+100°C
FEATURES
z
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
HighBV (80Vmin)
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
z
z
z
z
HighIsolCaEtiOonVoltage(5.3kVRMS,7.5kV )
All electrical parameters 100% tested PK
Custom electrical selections available
ForwardCurrent
ReverseVoltage
Power Dissipation
60mA
6V
105mW
APPLICATIONS
z
z
z
z
DCmotorcontrollers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Collector-baseVoltageBV
Emitter-collectorVoltageBCVBOECO
CollectorCurrent
80V
80V
6V
50mA
OPTION G
OPTION SM
SURFACEMOUNT
Power Dissipation
160mW
7.62
POWERDISSIPATION
Total Power Dissipation
(deratelinearly2.67mW/°Cabove25°C)
200mW
0.6
0.1
1.25
0.75
0.26
10.16
10.46
9.86
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS251UD
Tel:(01429)863609 Fax:(01429)863581
17/7/08
DB90047
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.5
10
V
IF = 10mA
ReverseCurrent(IR)
μA
V
VR =6V
Output
Collector-emitter Breakdown (BV
)
80
IC = 1mA
( note C2EO)
Collector-base Breakdown (BVCBO
Emitter-collector Breakdown (BVECO
)
80
6
V
V
nA
nA
IC = 100μA
IE = 100μA
VCE = 60V
VCE = 60V
)
)
Collector-emitter Dark Current (ICEO
Collector-base Dark Current (ICBO
50
20
)
Coupled Current Transfer Ratio (CTR)
Collector-emitter Saturation VoltageVCE(SAT)
20
%
V
10mA IF , 10V VCE
20mA IF , 4mA IC
1.0
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Response Time (rise)
ResponseTime(fall)
2
2
μs
μs
VCC =5V,
IF=10mA,RL =75Ω
(FIG 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 75Ω
tf
tr
Output
Output
10%
10%
90%
90%
FIG 1
DB90047m-AAS/A3
17/7/08
Collector Power Dissipation vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
200
2.8
2.4
150
100
2.0
1.6
1.2
0.8
50
0
V
= 1V
TACE= 25°C
0.4
0
1
2
5
10
20
50
-30
0
25
50
75
100 125
Forward current IF (mA)
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
80
70
1.4
1.2
60
1.0
0.8
50
40
30
20
0.6
0.4
V
= 10V
TACE= 25°C
0.2
0
10
-30
0
25
50
75
100 125
1
2
5
10
20
50
Ambient temperature TA ( °C )
Forward current IF (mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
0.28
0.24
1.5
1.0
IF = 10mA
VCE = 10V
I = 20mA
IFC = 4mA
0.20
0.16
0.12
0.08
0.5
0
0.04
0
-30
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
DB90047m-AAS/A3
17/7/08
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