TIP147 [ISC]

Silicon PNP Darlington Power Transistors; 硅PNP达林顿功率晶体管


型号：	TIP147
厂家：	INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：	Silicon PNP Darlington Power Transistors 硅PNP达林顿功率晶体管晶体晶体管
文件：	总4页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

TIP145/146/147

DESCRIPTION

·With TO-3PN package

·DARLINGTON

·High DC current gain

·Complement to type TIP140/141/142

APPLICATIONS

·Designed for general–purpose amplifier and

low frequency switching applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

TIP145

TIP146

TIP147

TIP145

TIP146

TIP147

V_CBO

Collector-base voltage

Open emitter

-80

-100

-60

V_CEO

Collector-emitter voltage

Open base

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current-DC

Collector current-peak

Base current-DC

Open collector

-10

-15

-0.5

125

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.0

UNIT

℃/W

R_{th j-c}

R_{th j-A}

Thermal resistance junction to case

Thermal resistance case to ambient

35.7

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

TIP145/146/147

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

TIP145

TIP146

TIP147

-60

Collector-emitter

sustaining voltage

V_CEO(SUS)

I_C=-30mA, I_B=0

-80

-100

V_CEsat-1

V_CEsat-2

V_BEsat

V_BE

Collector-emitter saturation voltage I_C=-5A ,I_B=-10mA

Collector-emitter saturation voltage I_C=-10A ,I_B=-40mA

-2.0

-3.0

-3.5

-3.0

Base-emitter saturation voltage

Base-emitter on voltage

I_C=-10A ,I_B=-40mA

I_C=-10A ; V_CE=-4V

V_CB=-60V, I_E=0

V_CB=-80V, I_E=0

V_CB=-100V, I_E=0

V_CE=-30V, I_B=0

V_CE=-40V, I_B=0

V_CE=-50V, I_B=0

V_EB=-5V; I_C=0

TIP145

I_CBO

Collector cut-off current

-1

TIP146

TIP147

TIP145

TIP146

TIP147

I_CEO

-2

I_EBO

h_FE-1

h_FE-2

Emitter cut-off current

DC current gain

I_C=-5A ; V_CE=-4V

I_C=-10A ; V_CE=-4V

1000

500

DC current gain

Switching times

t_d

t_r

Delay time

0.15

0.55

2.5

μs

V_CC=-30 V, I_C= -5.0 A,

I_B=-20 mA Duty Cycle≤20%

I_B1= I_B2, R_C& R_BVaried,

T_J= 25℃

Rise time

Storage time

Fall time

t_stg

t_f

2.5

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

TIP145/146/147

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

TIP145/146/147

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