TIP125 [ISC]
Silicon PNP Darlington Power Transistors; 硅PNP达林顿功率晶体管
| 型号： | TIP125 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Darlington Power Transistors |
| 文件： | 总4页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
DESCRIPTION
·With TO-220C package
·DARLNGTON
·High DC durrent gain
·Low collector saturation voltage
·Complement to type TIP120/121/122
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
VCBO
Collector-base voltage
Open emitter
V
-80
-100
-60
VCEO
Collector-emitter voltage
Open base
V
-80
-100
-5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
Open collector
V
A
-5
-8
A
-120
65
mA
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
TIP125
TIP126
TIP127
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A, IB=0
V
-80
-100
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=-3A ,IB=-12mA
Collector-emitter saturation voltage IC=-5A ,IB=-20mA
-2.0
-4.0
-2.5
V
V
V
Base-emitter on voltage
IC=-3.0A ; VCE=-3V
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE=-30V, IB=0
VCE=-40V, IB=0
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
Collector
cut-off current
ICBO
-0.2
mA
Collector
cut-off current
ICEO
-0.5
-2
mA
mA
VCE=-50V, IB=0
IEBO
hFE-1
hFE-2
Cob
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
IC=-0.5A ; VCE=-3V
IC=-3.0A ; VCE=-3V
IE=0 ; VCB=-10V,f=0.1MHz
1000
1000
DC current gain
Output capacitance
300
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
4
相关型号：
TIP125-6226
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP125-6258
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP125-6261
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP125-DR6269
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
©2020 ICPDF网 联系我们和版权申明