MJE3055 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
MJE3055
型号: MJE3055
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJE3055  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = 60V(Min)  
·High DC Current Gain-  
: hFE= 20-100@IC= 4A  
·Complement to Type MJE2955  
APPLICATIONS  
·Designed for use in general-purpose amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
70  
60  
V
5
10  
V
Collector Current-Continuous  
Base Current-Continuous  
A
IB  
6
A
Collector Power Dissipation  
@ TC=25℃  
PC  
90  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.39  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJE3055  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP. MAX UNIT  
V(BR)CEO  
IC= 200mA; IB=0  
60  
V
IC= 4A; IB= 0.4A  
IC= 10A; IB= 3.3A  
IC= 4A ; VCE= 4V  
1.1  
8.0  
1.8  
V
VCE  
VCE  
(sat)-1  
(sat)-2  
V
V
VBE  
(on)  
VCE=70V;VEB( )=-1.5V  
1.0  
5.0  
off  
ICEX  
mA  
mA  
mA  
mA  
V
CE=70V;VEB( )=-1.5V;TC= 150℃  
off  
ICEO  
ICBO  
IEBO  
hFE-1  
hFE-2  
fT  
Collector Cutoff Current  
VCE= 30V; IB= 0  
0.7  
V
CB= 70V; IE= 0  
VCB= 70V; IE= 0; TC= 150℃  
1.0  
10  
Collector Cutoff Current  
Emitter Cutoff Current  
VEB= 5V; IC= 0  
5.0  
DC Current Gain  
IC= 4A ; VCE= 4V  
20  
5
100  
DC Current Gain  
IC= 10A ; VCE= 4V  
Current Gain-Bandwidth Product  
IC= 0.5A; VCE= 10V; f= 500kHz  
2.0  
MHz  
2
isc Websitewww.iscsemi.cn  

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