BUX66 [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | BUX66 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX66/A
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PD= 35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-200
-300
-150
-250
-6
UNIT
BUX66
VCBO
Collector-Base Voltage
V
BUX66A
BUX66
VCEO
Collector-Emitter Voltage
V
BUX66A
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
V
A
IC
-2.0
ICP
-5.0
A
IB
-1.0
A
PC
TJ
Collector Power Dissipation@TC=25℃
Junction Temperature
35
W
℃
℃
200
Storage Temperature
-65~200
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX66/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-150
-250
TYP.
MAX
UNIT
BUX66
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= -200mA ; IB=0
V
BUX66A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC= -1A; IB= -0.15A
IC= -1A; IB= -0.15A
VCB= -150V; IE= 0
-2.5
-1.4
-1.0
-1.0
-0.5
150
V
V
VCE
VBE
(sat)
(sat)
BUX66
Collector
Cutoff Current
ICBO
mA
mA
BUX66A VCB= -250V; IE= 0
VEB= -6V; IC=0
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
IC= -1A ; VCE= -5V
10
Current Gain-Bandwidth Product
IC= -0.5A ; VCE= -10V
30
MHz
2
isc Website：www.iscsemi.cn
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