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BU806 [ISC]

isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
BU806
型号： BU806
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Darlington Power Transistor
ISC的硅NPN达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：108K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
BU806  
DESCRIPTION  
·High Voltage: VCEV= 400V(Min)  
·Low Saturation Voltage-  
: VCE(sat)= 1.5V(Max)@ IC= 5A  
APPLICATIONS  
·Designed for use in horizontal deflection circuits in TV’s and  
CRT’s.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
VALUE  
400  
400  
200  
6
UNIT  
V
V
V
V
8
A
ICM  
15  
A
IB  
2
A
Collector Power Dissipation  
@ TC=25℃  
PC  
60  
W
℃
℃
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.08  
70  
℃/W  
℃/W  
Rth j-c  
Rth j-a  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
BU806  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
TYP. MAX UNIT  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
IC= 100mA ;IB= 0  
200  
V
IC= 5A; IB= 50mA  
1.5  
2.4  
0.1  
0.1  
3.0  
2.0  
V
V
)
sat  
IC= 5A; IB= 50mA  
VBE(  
)
sat  
ICES  
VCE= RatedVCBO; VBE= 0  
mA  
mA  
mA  
V
ICEV  
IEBO  
VECF  
Collector Cutoff Current  
VCE= RatedVCEV; VBE( )= 6V  
off  
Emitter Cutoff Current  
VEB= 6V; IC= 0  
IF= 4A  
C-E Diode Forward Voltage  
Switching Times  
Turn-On Time  
0.35  
0.55  
0.20  
μs  
μs  
μs  
ton  
IC= 5A; IB1= 50mA;IB2= -0.5A  
Storage Time  
Fall Time  
ts  
VCC= 100V  
tf  
2
isc Website：www.iscsemi.cn  

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