BU408D [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU408D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU408D
DESCRIPTION
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed-
: tf= 0.5μs(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 6A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
VALUE
400
400
200
6
UNIT
V
V
V
V
7
A
ICM
10
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
60
W
℃
℃
TJ
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
2.08
UNIT
℃/W
Thermal Resistance, Junction to Case
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU408D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
CONDITIONS
MIN
TYP. MAX UNIT
IC= 100mA ;IB= 0
200
V
IC= 6A; IB= 1.2A
1.0
1.5
V
V
)
sat
IC= 6A; IB= 1.2A
VBE(
)
sat
hFE
IC= 2A; VCE= 5V;
15
ICEV
IEBO
fT
Collector Cutoff Current
VCE= 400V; VBE= -1.5V
VEB= 6V; IC= 0
15
mA
mA
MHz
V
Emitter Cutoff Current
400
Current-Gain—Bandwidth Product
C-E Diode Forward Voltage
Fall Time
10
IC= 0.5A ; VCE= 10V, ftest= 1MHz
VECF
IF= 5A
1.5
0.5
IC= 6A; IB1= -IB2= 1.2A, VCC= 40V
μs
tf
2
isc Website：www.iscsemi.cn
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