BU407D [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU407D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406D BU407D
DESCRIPTION
·
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
400
330
200
150
6
UNIT
BU406D
BU407D
BU406D
BU407D
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Open collector
V
A
7
10
A
4
A
Ptot
Tj
Total power dissipation
TC=25℃
60
W
℃
℃
Maximum operating junction temperature
Storage temperature
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
MAX
UNIT
2.08
℃/W
Rth j-c
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406D BU407D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
200
150
TYP.
MAX
UNIT
BU406D
BU407D
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=100mA ; IB=0
V
VCEsat
Collector-emitter saturation voltage IC=5A ;IB=0.65A
1.0
1.3
V
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.65A
BU406D
VCE=400V; VBE=-1.5V
Collector
cut-off current
ICEV
15
mA
mA
BU407D
VCE=330V; VBE=-1.5V
IEBO
hFE
VF
fT
Emitter cut-off current
DC current gain
VEB=6.0V; IC=0
IC=2A ; VCE=5V
IF=5A
400
15
Diode forward voltage
Transition frequency
Fall time
1.5
V
IC=0.5A ;VCE=10V;f=1.0MHz
10
MHz
μs
IC=5A ;VCC=40V
IBend=0.65A
tf
0.75
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406D BU407D
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
相关型号：
BU407D16A
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BU407DAJ
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BU407DC
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BU407DD1
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BU407DL
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BU407DLEADFREE
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明